hat2058r/hat2058rj silicon n channel power mos fet high speed power switching ade-208-934 (z) 1st. edition mar. 2001 features low on-resistance capable of 4 v gate drive low drive current high density mounting ??is for automotive application high temperature d-s leakage guarantee avalanche rating outline sop-8 1 2 3 4 5 6 7 8 g d s d g d s d mos1 mos2 1 2 78 4 5 6 3 1, 3 source 2, 4 gate 5, 6, 7, 8 drain
hat2058r/hat2058rj 2 absolute maximum ratings (ta = 25 c) ratings item symbol hat2058r hat2058rj unit drain to source voltage v dss 100 100 v gate to source voltage v gss 20 20 v drain current i d 44 a drain peak current i d (pulse) note1 32 32 a body-drain diode reverse drain current i dr 44 a avalanche current i ap note4 ? a avalanche energy e ar note4 1.6 mj channel dissipation pch note2 22 w pch note3 33 w channel temperature tch 150 150 c storage temperature tstg ?5 to +150 ?5 to +150 c notes: 1. pw 10 m s, duty cycle 1% 2. 1 drive operation; when using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10 s 3. 2 drive operation; when using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10 s 4. value at tch = 25 c, rg 3 50 w
hat2058r/hat2058rj 3 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 100 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 v i g = 100 m a, v ds = 0 zero gate voltage hat2058r i dss 1 m av ds = 100 v, v gs = 0 drain current hat2058rj i dss 0.1 m a zero gate voltage hat2058r i dss m av ds = 80 v, v gs = 0 drain current hat2058rj i dss 10 m a ta = 125 c gate to source cutoff voltage i gss 10 m av gs = 16 v, v ds = 0 static drain to source on state resistance v gs(off) 1.0 2.5 v v ds = 10 v, i d = 1 ma forward transfer admittance |y fs |3 5 s i d = 2 a* 1 , v ds = 10 v static drain to source on state r ds(on) 120 145 m w i d = 2 a* 1 , v gs = 10 v resistance r ds(on) 150 180 m w i d = 2 a* 1 , v gs = 4 v input capacitance ciss 420 pf v ds = 10 v, v gs = 0 output capacitance coss 180 pf f = 1 mhz reverse transfer capacitance crss 100 pf turn-on delay time td(on) 10 ns v gs = 10 v, i d = 2 a rise time tr 30 ns v dd @ 30 v turn-off delay time td(off) 110 ns fall time tf 60 ns body-drain diode forward voltage v df 0.85 1.1 v i f = 4 a, v gs = 0* 1 body-drain diode reverse recovery time trr 75 ns i f = 4 a, v gs = 0 dif/dt = 50 a/ m s note: 1. pulse test
hat2058r/hat2058rj 4 main characteristics 4.0 3.0 2.0 1.0 0 50 100 150 200 10 8 6 4 2 0 12345 20 16 12 8 0 2 46810 v = 2.0 v gs 6 v 4.0 v tc = 75 c 25 c -25 c 10 v 10 3 1 0.3 0.1 0.03 0.01 0.1 0.3 1 3 10 30 100 100 30 100 m s 10 m s 1 ms pw = 10 ms 4 channel dissipation pch (w) ambient temperature ta ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area operation in this area is limited by r ds(on) drain to source voltage v ds (v) drain current i d (a) typical output characteristics pulse test gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics v = 10 v ds pulse test test condition : when using the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw < 10 s 2 drive operation 1 drive operation ta = 25 c 1 shot pulse 1 drive operation note 6: when using the glass epoxy board (fr4 40 x 40 x 1.6 mm) note 5 dc operation (pw < 10 s)
hat2058r/hat2058rj 5 0.1 1 10 0.2 5 0.5 0.02 0.05 0.01 0.5 0.4 0.3 -40 0 40 80 120 160 0 0.1 0.3 1 3 10 30 100 50 20 5 10 1 2 0.5 2 0.5 1 0.8 0.6 0.4 0.2 0 48 12 16 20 i = 4 a d 1 a 2 a 50 20 0.2 0.1 v = 4 v gs 10 v v = 4 v gs 10 v i =1, 2 a 4 a 1, 2a 25 c tc = -25 c 75 c 0.2 0.1 4 a d gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) pulse test drain to source on state resistance r ds(on) ( w ) static drain to source on state resistance vs. drain current pulse test drain current i d (a) case temperature tc ( c) static drain to surce on state resistance r ds(on) ( w ) static drain to source on state resistance vs. temperature pulse test drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) ds v = 10 v pulse test
hat2058r/hat2058rj 6 0.1 0.3 1 3 10 30 100 01020304050 2000 5000 1000 100 200 500 200 160 120 80 40 0 20 16 12 8 4 8 16243240 0 1000 500 50 100 20 10 200 1000 300 30 100 3 10 1 0.1 0.3 1 3 10 30 100 di / dt = 50 a / m s v = 0, ta = 25 c gs 10 20 50 v = 0 f = 1 mhz gs ciss coss crss i = 4 a d v gs v ds v = 80v 50v 25v dd v = 80 v 50 v 25 v dd v = 10 v, v = 30 v pw = 5 m s, duty < 1 % gs dd t f r t d(on) t d(off) t reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time typical capacitance vs. drain to source voltage capacitance c (pf) drain to source voltage v ds (v) gate charge qg (nc) drain to source voltage v ds (v) gate t o source voltage v gs (v) dynamic input characteristics switching time t (ns) drain current i d (a) switching characteristics
hat2058r/hat2058rj 7 10 8 6 4 2 0 0.4 0.8 1.2 1.6 2.0 v = 0, -5 v gs 10 v 5 v 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 0 i = 4 a v = 50 v l = 100 m h duty < 0.1 % rg > 50 ap dd w d. u. t rg i monitor ap v monitor ds v dd 50 w vin 15 v 0 i d v ds i ap v (br)dss l v dd tr td(on) vin 90% 90% 10% 10% vout td(off) 90% 10% t f vin monitor d.u.t. vin 10 v r l v = 30 v dd vout monitor 50 w e = l i 2 1 v v e v ar ap dss dss dd 2 source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage pulse test channel temperature tch ( c) repetive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating avalanche test circuit avalanche waveform switching time test circuit switching time waveform
hat2058r/hat2058rj 8 10 m 100 m 1 m 10 m 100 m 1 10 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse dm p pw t d = pw t ch-f(t) = s (t) ch - f ch-f = 125 c/w, ta = 25 c q g q q when using the glass epoxy board (fr4 40 x 40 x 1.6 mm) 10 m 100 m 1 m 10 m 100 m 1 10 normalized transient thermal impedance vs. pulse width (2 drive operation) 100 1000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse dm p pw t d = pw t ch-f(t) = s (t) ch - f ch-f = 166 c/w, ta = 25 c q g q q when using the glass epoxy board (fr4 40 x 40 x 1.6 mm) normalized transient thermal impedance vs. pulse width (1 drive operation) pulse width pw (s) normalized transient thermal impedance g s (t) pulse width pw (s) normalized transient thermal impedance g s (t)
hat2058r/hat2058rj 9 package dimensions hitachi code jedec eiaj fp-8da unit: mm 0.75max. 1.27typ. 0.51max. 0.25max. 0.19min. pin no. 4.8min. 5.0max. 0.15max. 0~8 1234 8765 0.33min. 0.15 0.25 m 0.25max. 0.10min. 1.75max. 1.35min. 3.8min. 0.4min. 1.27max. 4.0max. 5.8min. 6.2max.
hat2058r/hat2058rj 10 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 2001. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 4.0
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