?2001 fairchild semiconductor corporation hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3 rev. b hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3 40a, 600v, ufs series n-channel igbts the hgt1s20n60b3s, the hgtp20n60b3 and the hgtg20n60b3 are generation iii mos gated high voltage switching devices comb ining the best f eatures of mosfets and bipolar transistors. these devices have the high input impedance of a mosfet and the low on-state conduction loss of a bipolar transistor. the much lower on-state voltage drop varies only moderately between 25 o c and 150 o c. the igbt is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: ac and dc motor controls, power supplies and drivers for solenoids, relays and contactors. formerly developmental type ta49050. symbol features ? 40a, 600v at t c = 25 o c 600v switching soa capability typical fall time. . . . . . . . . . . . . . . . . . . . 140ns at 150 o c short circuit rated low conduction loss related literature - tb334 ?guidelines for soldering surface mount components to pc boards? packaging jedec to-263ab jedec to-220ab (alternate version) jedec style to-247 ordering information part number package brand hgtp20n60b3 to-220ab g20n60b3 hgt1s20n60b3s to-263ab g20n60b3 hgtg20n60b3 to-247 hg20n60b3 note: when ordering, use the entire part number. add the suffix 9a to obtain the to-263ab in t ape and reel, i.e., HGT1S20N60B3S9A. c e g collector (flange) e g c g e collector (flange) g c e collector (flange) fairchild corporation igbt product is covered by one or more of the following u.s. patents 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 data sheet december 2001
?2001 fairchild semiconductor corporation hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3 rev. b absolute maximum ratings t c = 25 o c, unless otherwise specified hgt1s20n60b3s hgtp20n60b3 hgtg20n60b3 units collector to emitter voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv ces 600 v collector to gate voltage, r ge = 1m ? . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . bv cgr 600 v collector current continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c25 40 a at t c = 110 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c110 20 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 160 a gate to emitter voltage continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges 20 v gate to emitter voltage pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem 30 v switching safe operating area at t c = 150 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ssoa 30a at 600v power dissipation total at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 165 w power dissipation derating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.32 w/ o c operating and storage junction temperature range . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -40 to 150 o c maximum temperature for soldering leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l package body for 10s, see tech brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t pkg 300 260 o c o c short circuit withstand time (note 2) at v ge = 15v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 4 s short circuit withstand time (note 2) at v ge = 10v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 10 s caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. v ce = 360v, t c = 125 o c, r g = 25 ?. electrical specifications t c = 25 o c, unless otherwise specified parameter symbol test conditions min typ max units collector to emitter breakdown voltage bv ces i c = 250 a, v ge = 0v 600 - - v collector to emitter leakage current i ces v ce = bv ces t c = 25 o c - - 250 a t c = 150 o c--1.0ma collector to emitter saturation voltage v ce(sat) i c = i c110 , v ge = 15v t c = 25 o c-1.82.0v t c = 150 o c-2.12.5v gate to emitter threshold voltage v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 6.0 v gate to emitter leakage current i ges v ge = 20v - - 100 na switching soa ssoa t c = 150 o c, v ge = 15v, r g = 10 ?, l = 45 h v ce = 480v 100 - - a v ce = 600v 30 - - a gate to emitter plateau voltage v gep i c = i c110 , v ce = 0.5 bv ces -8.0- v on-state gate charge q g(on) i c = i c110 , v ce = 0.5 bv ces v ge = 15v - 80 105 nc v ge = 20v - 105 135 nc current turn-on delay time t d(on)i t c = 150 o c i ce = i c110 v ce = 0.8 bv ces v ge = 15v r g = 10 ? l = 100 h -25-ns current rise time t ri -20-ns current turn-off delay time t d(off)i - 220 275 ns current fall time t fi - 140 175 ns turn-on energy e on - 475 - j turn-off energy (note 3) e off - 1050 - j thermal resistance r jc - - 0.76 o c/w note: 3. turn-off energy loss (e off ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (i ce = 0a). the hgt1s20n60b3s, hgtp20n60b3 and hgtg20n60b3 were tested per jedec standard no. 24-1 method for measurement of power device turn-off switching loss. this test method produces the true tota l turn- off energy loss. turn-on losses include diode losses. hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3
?2001 fairchild semiconductor corporation hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3 rev. b typical performance curves figure 1. transfer characteristics fig ure 2. saturation characteristics figure 3. dc collector current vs case temperature figure 4. collector to emitter on-state voltage figure 5. capacitance vs collector to emitter voltage figure 6. gate charge waveforms i ce , collector to emitter current (a) 46810 v ge , gate to emitter voltage (v) 100 80 60 40 20 0 12 t c = 150 o c t c = 25 o c t c = -40 o c pulse duration = 250 s duty cycle <0.5%, v ce = 10v i ce , collector to emitter current (a) 100 80 60 40 20 0 0246810 v ce , collector to emitter voltage (v) v ge = 15v 12v v ge = 10v v ge = 9v v ge = 8.5v v ge = 8.0v v ge = 7.0v pulse duration = 250 s duty cycle <0.5% t c = 25 o c v ge = 7.5v 10 20 30 40 50 0 25 50 75 100 125 150 v ge = 15v i ce , dc collector current (a) t c , case temperature ( o c) i ce , collector to emitter current (a) 0 20 40 60 80 100 012345 v ce , collector to emitter voltage (v) t c = 150 o c pulse duration = 250 s t c = -40 o c duty cycle <0.5%, v ge = 15v t c = 25 o c c, capacitance (pf) 0 5 10 15 20 25 v ce , collector to emitter voltage (v) 0 1000 2000 3000 4000 5000 c ies c oes c res frequency = 1mhz v ge , gate to emitter voltage (v) 0 3 6 9 12 15 0 120 240 360 480 600 v ce , collector to emitter voltage (v) 02040 q g , gate charge (nc) v ce = 400v v ce = 200v 80 100 60 v ce = 600v t c = 25 o c i g(ref) = 1.685ma r l = 30 ? hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3
?2001 fairchild semiconductor corporation hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3 rev. b figure 7. turn-on delay time vs collector to emitter current figure 8. turn-off delay time vs collector to emitter current figure 9. turn-on rise time vs collector to emitter current figure 10. turn-off fall time vs collector to emitter current figure 11. turn-on energy loss vs collector to emitter current figure 12. turn-off energy loss vs collector to emitter current typical performance curves (continued) t d(on)i , turn-on delay time (ns) 10 20 50 30 40 010203040 i ce , collector to emitter current (a) 100 t j = 150 o c, r g = 10 ? , l = 100 h v ce = 480v, v ge = 15v i ce , collector to emitter current (a) t d(off)i , turn-off delay time (ns) 500 400 300 200 100 0 10 20 30 40 v ce = 480v, v ge = 15v t j = 150 o c, r g = 10 ? , l = 100 h i ce , collector to emitter current (a) v ce = 480v, v ge = 15v t ri , turn-on rise time (ns) 1 10 100 010203040 t j = 150 o c, r g = 10 ? , l = 100 h i ce , collector to emitter current (a) t fi , fall time (ns) 1000 100 10 0 10203040 v ce = 480v, v ge = 15v t j = 150 o c, r g = 10 ? , l = 100 h i ce , collector to emitter current (a) 010203040 e on , turn-on energy loss ( j) 1400 1000 0 v ce = 480v, v ge = 15v 1200 800 600 400 200 t j = 150 o c, r g = 10 ? , l = 100 h i ce , collector to emitter current (a) e off , turn-off energy loss ( j) 2500 2000 1500 1000 500 0 010203040 v ce = 480v, v ge = 15v t j = 150 o c, r g = 10 ? , l = 100 h hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3
?2001 fairchild semiconductor corporation hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3 rev. b figure 13. operating frequency vs collector to emitter curren t figure 14. switching safe operating area figure 15. igbt normalized transient thermal response, junction to case typical performance curves (continued) i ce , collector to emitter current (a) f max , operating frequency (khz) 510203040 10 100 500 v ce = 480v t j = 150 o c, t c = 75 o c, v ge = 15v r g = 10 ? , l = 100 h f max2 = (p d - p c )/(e on + e off ) p d = allowable dissipation p c = conduction dissipation f max1 = 0.05/(t d(off)i + t d(on)i ) (duty factor = 50%) r jc = 0.76 o c/w 100 200 300 400 500 600 700 0 20 0 40 80 100 120 v ce , collector to emitter voltage (v) i ce , collector to emitter current (a ) t c = 150 o c, v ge = 15v, r g = 10 ? 60 t 1 , rectangular pulse duration (s) 10 -3 10 -2 10 -1 10 0 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 0.1 0.2 0.05 0.02 single pulse t 1 t 2 p d z jc , normalized thermal response 0.5 0.01 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c test circuit and waveform figure 16. inductive switching test ci rcuit figure 17. switching test waveforms r g = 10 ? l = 100 h v dd = 480v + - rhrp3060 t fi t d(off)i t ri t d(on)i 10% 90% 10% 90% v ce i ce v ge e off e on hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3
?2001 fairchild semiconductor corporation hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3 rev. b handling precautions for igbts insulated gate bipolar transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. when handling these devices, care should be exercised to assure that the static c harge built in the handler?s body capacitance is not discharged through the device. with proper handling and application procedures, however, igbts are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. igbts can be handled safely if the following basic precautions are taken: 1. prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ?eccosorbd ? ld26? or equivalent. 2. when devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. tips of soldering irons should be grounded. 4. devices should never be inserted into or removed from circuits with power on. 5. gate voltage rating - never exceed the gate-voltage rating of v gem . exceeding the rated v ge can result in permanent damage to the oxide layer in the gate region. 6. gate termination - the gates of these devices are essentially capacitors. circuits that leave the gate open- circuited or floating should be avoided. these conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. gate protection - these devices do not have an internal monolithic zener diode from gate to emitter. if gate protection is required an external zener is recommended. operating frequency information operating frequency information for a typical device (figure 13) is presented as a guide for estimating device performance for a specific application. other typical frequency vs collector current (i ce ) plots are possible using the information shown for a typical unit in figures 4, 7, 8, 11 and 12. the operating fre quency plot (figure 13) of a typical device shows f max1 or f max2 whichever is smaller at each point. the information is based on measurements of a typical device and is bounded by the maximum ra ted junction temperature. f max1 is defined by f max1 = 0.05/(t d(off)i + t d(on)i ). deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. other definitions are possible. t d(off)i and t d(on)i are defined in figure 17. device turn-off delay can establish an additional frequency limiting condition for an application other than t jm . t d(off)i is important when controlling output ripple under a lightly loaded condition. f max2 is defined by f max2 = (p d - p c )/(e off + e on ). the allowable dissipation (p d ) is defined by p d =(t jm -t c )/r jc . the sum of device switching and conduction losses must not exceed p d . a 50% duty factor was used (figure 13) and the conduction losses (p c ) are approximated by p c =(v ce xi ce )/2. e on and e off are defined in the switching waveforms shown in figure 17. e on is the integral of the instantaneous power loss (i ce x v ce ) during turn-on and e off is the integral of the instantaneous power loss (i ce x v ce ) during turn-off. all tail losses are included in the calculation for e off ; i.e., the collector current equals zero (i ce = 0). hgt1s20n60b3s, hgtp20n60b3, hgtg20n60b3
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