? 2006 ixys corporation all rights reserved v ces = 1700 v i c25 = 32 a v ce(sat) = 3.5 v ixgh 16n170 ixgt 16n170 c (tab) g = gate, c = collector, e = emitter, tab = collector g c e to-247 (ixgh) features z international standard packages jedec to-268 and jedec to-247 ad z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies advantages z high power density z suitable for surface mounting z easy to mount with 1 screw, (isolated mounting screw hole) ds98996c(07/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c50 a v ge = 0 v t j = 125 c 500 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v t j = 25 c 2.7 3.5 v t j = 125 c 3.3 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c32a i c90 t c = 90 c16a i cm t c = 25 c, 1 ms 80 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (m3) 1.13/10nm/lb.in. weight to-247 ad 6 g to-268 4 g to-268 (d3-pak) (ixgt) g e high voltage igbt c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 16n170 ixgt 16n170 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 10 14 s pulse test, t 300 s, duty cycle 2 % i c(on) v ge = 10v, v ce = 10v 65 a c ies 1650 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 75 pf c res 26 pf q g 78 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 13 nc q gc 24 nc t d(on) 45 ns t ri 48 ns t d(off) 400 600 ns t fi 770 1100 ns e off 9.3 14 mj t d(on) 48 ns t ri 42 ns e on 1.5 mj t d(off) 430 ns t fi 1170 ns e off 11.2 mj r thjc 0.65 c/w r thcs (to-247) 0.25 c/w inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 10 inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 10 to-268 (ixgt) outline (d3-pak) ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain ref: ixys co 0052 ra
? 2006 ixys corporation all rights reserved ixgh 16n170 ixgt 16n170 fi g . 2. extended output characteristics @ 25 deg. c 0 20 40 60 80 10 0 12 0 14 0 16 0 0 2 4 6 81012141618 v ce - volts i c - amperes v g e = 1 7v 9v 1 1v 7v 1 3 v 1 5 v fi g . 3. output characteristics @ 125 deg. c 0 4 8 12 16 20 24 28 32 0.5 1.5 2.5 3.5 4.5 5.5 6.5 v ce - volts i c - amperes v g e = 1 7v 1 5v 1 3v 1 1 v 7v 9v fi g . 1. output characteristics @ 25 deg. c 0 4 8 12 16 20 24 28 32 0.511.522.533.544.55 v ce - volts i c - amperes v g e = 1 7v 1 5v 1 3v 1 1 v 7v 9v fig. 6. input admittance 0 8 16 24 32 40 48 56 345678910 v ge - volts i c - amperes t j = 1 25 o c 25 o c -40 o c fig. 4. temperature dependence of v ce(sat) 0.6 0.8 1 1. 2 1. 4 1. 6 1. 8 2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalized i c = 32a i c = 1 6a i c = 8a v g e = 1 5v fig. 5. collector-to-emitter voltage vs. gate-to-emiiter voltage 1 2 3 4 5 6 7 8 9 10 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts t j = 25 o c i c = 32a 16 a 8a
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 16n170 ixgt 16n170 fig. 12. capacitance 10 10 0 10 0 0 10 0 0 0 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - pf c ies c oes c res f = 1 m hz fig. 11. gate charge 0 3 6 9 12 15 0 10 20304050607080 q g - nanocoulombs v g e - volts v c e = 600v i c = 1 6a i g = 1 0m a fi g . 7. transconductance 0 3 6 9 12 15 18 21 0 8 16 24 32 40 48 56 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 8. dependence of e off on r g 8 10 12 14 16 18 20 22 24 0 10 2030405060 r g - ohms e off - millijoules i c = 16a i c = 32a t j = 125 o c v g e = 15v v c e = 1360v fig. 9. dependence of e off on i c 10 12 14 16 18 20 22 24 16 18 20 22 24 26 28 30 32 i c - amperes e off - millijoules r g = 10 ohm s r g = 50 ohm s t j = 125 o c v g e = 15v v c e = 1360v fig. 10. dependence of e off on t emperature 7 10 13 16 19 22 25 28 31 0255075100125150 t j - degrees centigrade e off - millijoules i c = 32a i c = 16a v g e = 15v v c e = 1360v r g = 10 ohm s r g = 50 ohms - - - - -
? 2006 ixys corporation all rights reserved ixgh 16n170 ixgt 16n170 fig. 14. maximum t ransient t hermal resistance 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th) j c - (oc/w) fig. 13. reverse-bias safe operating area 0 5 10 15 20 25 30 35 40 45 100 300 500 700 900 1100 1300 1500 1700 v c e - volts i c - amperes t j = 125 o c r g = 10 ? dv/dt < 10v/ns
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