? 2005 ixys all rights reserved v ces = 1700 v i c25 = 16 a v ce(sat) = 5.0 v t fi(typ) = 70 ns ixgh 16n170a ixgt 16n170a ixgh 16n170ah1 ixgt 16n170ah1 c (tab) g = gate c = collector, e = emitter tab = collector g c e to-247 (ixgh) features z high blocking voltage z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z molding epoxies meet ul 94 v-0 flammability classification z sonic-frd tm fast recovery copack diode z international standard packages jedec to-268 and jedec to-247 ad applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies advantages z high power density z suitable for surface mounting z easy to mount with 1 screw, (isolated mounting screw hole) ds99235a(06/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces 16n170a 50 a v ge = 0 v, note 1 16n170ah1 100 a t j = 125 c 16n170a 750 a 16n170ah1 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 4.0 5.0 v t j = 125 c 4.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c16a i c90 t c = 90 c11a i f90 t c = 90 c, diode 17 a i cm t c = 25 c, 1 ms 40 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ce = 1200 v; v ge = 15 v, r g = 22 10 s p c t c = 25 c 190 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) to-247 1.13/10nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s plastic body for 10s 260 c weight to-247 6 g to-268 4 g to-268 (ixgt) g e high voltage igbt h1 c (tab) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixgh/ixgt 16n170a ixgh/ixgt 16n170ah1 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs i c = i c25 ; v ce = 10 v 7 13 s note 2 c ies 1620 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 16n170a 83 pf 16n170ah1 110 pf c res 31 pf q g 83 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 10 nc q gc 31 nc t d(on) 36 ns t ri 57 ns t d(off) 160 300 ns t fi 70 150 ns e off 0.85 1.5 mj t d(on) 38 ns t ri 59 ns e on 16n170a 1.5 mj 16n170ah1 2.5 mj t d(off) 175 ns t fi 155 ns e off 2.0 mj r thjc 0.65 k/w r thck (to-247) 0.25 k/w inductive load, t j = 125 c i c = i c25 , v ge = 15 v, r g = 10 v ce = 0.5 v ces ,note 3 inductive load, t j = 25 c i c = i c25 , v ge = 15 v, r g = 10 v ce = 0.5 v ces ,note 3 notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . dim. mi llimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 ad outline to-268 outline dim. millimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 reverse diode (fred) characteristic values symbol test conditions min. typ. max. (t j = 25 c unless otherwise specified) v f i f = 20a, v ge = 0 v, note 2 2.5 2.9 v t j = 125 c 2.5 v t rr i f = 20a, v ge = 0 v, -di f /dt = 450 a/ s 230 ns v r = 1200 v t j = 125 c 400 ns i rm 23 a t j = 125 c27 a r thjc 0.9 k/w
? 2005 ixys all rights reserved ixgh/ixgt 16n170a ixgh/ixgt 16n170ah1 fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15 18 21 24 27 30 v c e - volts i c - amperes v ge = 15v 7v 9v 11v 13v 5v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 123456789 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 6v 5v 7v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 1234567 v c e - volts i c - amperes v ge = 15v 13v 11v 9v 5v 6v 7v fig. 4. dependence of v ce(sat) on temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e (sat) - normalized i c = 8a i c = 4a v ge = 15v i c = 16a fig. 5. collector-to-em itter voltage vs. gate-to-em itter voltage 2 3 4 5 6 7 8 9 10 56789101112131415 v g e - volts v c e - volts t j = 25 o c i c = 16a 8a 4a fig. 6. input adm ittance 0 5 10 15 20 25 30 35 40 44.555.566.577.588.5 v g e - volts i c - amperes t j = 125 o c 25 o c -40 o c
ixys reserves the right to change limits, test conditions, and dimensions. ixgh/ixgt 16n170a ixgh/ixgt 16n170ah1 fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30 35 40 i c - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 8. dependence of turn-off energy loss on r g 1 2 3 4 5 6 10 20 30 40 50 60 70 80 90 100 r g - ohms e o f f - millijoules i c = 8a t j = 125 o c v ge = 15v v ce = 850v i c = 16a i c = 24a fig. 9. dependence of turn-off energy loss on i c 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 8 121620242832 i c - amperes e o f f - millijoules r g = 10 v ge = 15v v ce = 850v t j = 125 o c t j = 25 o c fig. 10. dependence of turn-off energy loss on temperature 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e o f f - millijoules i c = 32a r g = 10 v ge = 15v v ce = 850v i c = 16a i c = 8a fig. 11. dependence of turn-off sw itching tim e on r g 0 100 200 300 400 500 600 700 800 900 1000 10 20 30 40 50 60 70 80 90 100 r g - ohms switching time - nanoseconds i c = 8a t d(off) t fi - - - - - - t j = 125oc v ge = 15v v ce = 850v i c = 16a i c = 32a fig. 12. dependence of turn-off sw itching tim e on i c 50 75 100 125 150 175 200 225 250 8 1216 20242832 i c - amperes switching time - nanoseconds t d( off) t fi - - - - - - r g = 10 v ge = 15v v ce = 850v t j = 125 o c t j = 25 o c
? 2005 ixys all rights reserved ixgh/ixgt 16n170a ixgh/ixgt 16n170ah1 fig. 14. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060708090 q g - nanocoulombs v g e - volts v ce = 850v i c = 8a i g = 10ma fig. 15. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 13. dependence of turn-off sw itching time on temperature 50 75 100 125 150 175 200 225 250 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade switching time - nanoseconds i c = 16a t d(off) t fi - - - - - - r g = 10 v ge = 15v v ce = 850v i c = 8a i c = 32a fig . 16. re ve r s e - bias saf e operating area 0 5 10 15 20 25 30 35 40 45 100 300 500 700 900 1100 1300 1500 1700 v c e - volts i c - amperes t j = 125 o c r g = 10 dv/dt < 10v/ns fig. 17. maximum transient thermal resistance 0.1 1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - ( oc / w )
ixys reserves the right to change limits, test conditions, and dimensions. ixgh/ixgt 16n170a ixgh/ixgt 16n170ah1 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineer- ing lots; but also may yet contain some information supplied during a subjective pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
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