View TDA1564J_2257256.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

d a t a sh eet preliminary speci?cation supersedes data of 2003 sep 17 2004 jan 27 integrated circuits tda1564 high efficiency 2 25 w/4 w stereo car radio power amplifier
2004 jan 27 2 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 features low dissipation due to switching from single-ended (se) to bridge-tied load (btl) mode differential inputs with high common mode rejection ratio (cmrr) mute/standby/operating (mode select pin) load dump protection circuit short-circuit safe to ground, to supply voltage and across load loudspeaker protection circuit offset detection for each channel device switches to single-ended operation at excessive junction temperatures thermal protection at high junction temperature (170 c) clip detection at thd = 2.5 % diagnostic information (clip/protection/prewarning/offset). general description the tda1564 is a monolithic power amplifier in a 17-lead single-in-line (sil) plastic power package. it contains two identical 25 w amplifiers. the dissipation is minimized by switching from se to btl mode, only when a higher output voltage swing is needed. the device is primarily developed for car radio applications. quick reference data ordering information symbol parameter conditions min. typ. max. unit v p supply voltage dc biased 6.0 14.4 18 v non-operating -- 30 v load dump -- 45 v i orm repetitive peak output current -- 4a i q(tot) total quiescent current r l = - 95 150 ma i stb standby current - 150 m a ? z i ? input impedance 90 120 150 k w p o output power r l =4 w ; eiaj - 38 - w r l =4 w ; thd = 10 % 23 25 - w r l =4 w ; thd = 2.5 % 18 20 - w g v voltage gain p o =1w 252627db cmrr common mode rejection ratio f = 1 khz; r s =0 w- 80 - db svrr supply voltage ripple rejection f = 1 khz; r s =0 w 45 65 - db ?d v o ? dc output offset voltage -- 100 mv a cs channel separation r s =0 w ; p o = 15 w 40 70 - db ?d g v ? channel unbalance -- 1db type number package name description version tda1564th hsop20 plastic, heatsink small outline package; 20 leads; low stand-off height sot418-3 TDA1564J dbs17p plastic dil-bent-sil power package; 17 leads (lead length 12 mm) sot243-1
2004 jan 27 3 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 block diagram mdb811 + - + - + - + - mute vi vi vi iv iv vi slave control 14 13 in2 + 19 cin 1 n.c. 10 n.c. in2 - 60 k w 60 k w 60 k w 60 k w 25 k w v ref out2 - out2 + 7 8 cse 16 + - + - + - + - mute slave control 17 18 in1 + in1 - out1 + out1 - 4 3 + - v p standby logic clip/protection temp prewarning 21512 mode offset detection diag oc1 9 oc2 gnd1 5 gnd2 6 v p2 11 v p1 20 tda1564th fig.1 block diagram (tda1564th).
2004 jan 27 4 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 mgw244 + - + - + - + - mute vi vi vi iv iv vi slave control 17 16 in2 + 3 cin in2 - 60 k w 60 k w 60 k w 60 k w 25 k w v ref out2 - out2 + 10 11 cse 4 + - + - + - + - mute slave control 1 2 in1 + in1 - out1 + out1 - 8 7 + - v p standby logic clip/protection temp prewarning 61514 mode offset detection diag oc1 12 oc2 gnd 9 v p2 13 v p1 5 TDA1564J fig.2 block diagram (TDA1564J).
2004 jan 27 5 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 pinning symbol pin description tda1564th TDA1564J n.c. 1 - not connected mode 2 6 mute/standby/operating out1 - 3 7 inverting output 1 out1+ 4 8 non-inverting output 1 gnd1 5 - ground 1 gnd - 9 ground gnd2 6 - ground 2 out2 - 7 10 inverting output 2 out2+ 8 11 non-inverting output 2 oc2 9 12 offset capacitor 2 n.c. 10 - not connected v p2 11 13 supply voltage 2 oc1 12 14 offset capacitor 1 in2 - 13 16 inverting input 2 in2+ 14 17 non-inverting input 2 diag 15 15 diagnostic cse 16 4 electrolytic capacitor for single-ended (se) mode in1+ 17 1 non-inverting input 1 in1 - 18 2 inverting input 1 cin 19 3 common input v p1 20 5 supply voltage 1
2004 jan 27 6 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 tda1564th v p1 n.c. cin mode in1 - out1 - in1 + out1 + cse gnd1 diag gnd2 in2 + out2 - in2 - out2 + oc1 oc2 v p2 n.c. 001aaa307 20 19 18 17 16 15 14 13 12 11 9 10 7 8 5 6 3 4 1 2 fig.3 pin configuration (tda1564th). handbook, halfpage TDA1564J mgw245 in1 + in1 - cin cse v p1 mode out1 - out1 + gnd out2 - out2 + oc2 v p2 oc1 diag in2 - in2 + 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 fig.4 pin configuration (TDA1564J). functional description the tda1564 contains two identical amplifiers with differential inputs. at low output power [up to output amplitudes of 3 v (rms) at v p = 14.4 v], the device operates as a normal se amplifier. when a larger output voltage swing is needed, the circuit switches internally to btl operation. with a sine wave input signal, the dissipation of a conventional btl amplifier (up to 2 w output power) is more than twice the dissipation of the tda1564 (see fig.12). in normal use, when the amplifier is driven with music-like signals, the high (btl) output power is only needed for a small percentage of time. assuming that a music signal has a normal (gaussian) amplitude distribution, the dissipation of a conventional btl amplifier with the same output power is approximately 70 % higher (see figs 13 and 14. the heatsink has to be designed for use with music signals. with such a heatsink, the thermal protection will disable the btl mode when the junction temperature exceeds 150 c. in this case, the output power is limited to 5 w per amplifier. the gain of each amplifier is internally fixed at 26 db. the device can be switched to the following modes via the mode pin: standby with low standby current (< 50 m a) mute condition, dc adjusted on, operation. the device is fully protected against a short-circuit of the output pins to ground and to the supply voltage. it is also protected against a short-circuit of the loudspeaker and against high junction temperatures. in the event of a permanent short-circuit condition to ground or the supply voltage, the output stage will be switched off, causing low dissipation. with a permanent short-circuit of the
2004 jan 27 7 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 loudspeaker, the output stage will be repeatedly switched on and off. the duty cycle in the on condition is low enough to prevent excessive dissipation. the device also has two independent dc offset detection circuits that can detect dc output voltages across the speakers. with a dc offset greater than 2 v, a warning is given on the diagnostic pin. there will be no internal shutdown with dc offsets. when the supply voltage drops below 6 v (e.g. engine start), the circuit mutes immediately, avoiding clicks from the electronic circuit preceding the power amplifier. the voltage of the se electrolytic capacitor (pin 4) is kept at 0.5v p by means of a voltage buffer (see fig.2). the value of this capacitor has an important influence on the output power in se mode, especially at low signal frequencies. a high value is recommended to minimize dissipation at low frequencies. the diagnostic output is an open-collector output and requires a pull-up resistor. it gives the following outputs: clip detection at thd = 2.5 % short-circuit protection: C when a short-circuit occurs (for at least 10 ms) at the outputs to ground or the supply voltage, the output stages are switched off to prevent excessive dissipation; the outputs are switched on again approximately 500 ms after the short-circuit is removed, during this short-circuit condition the protection pin is low C when a short-circuit occurs across the load (for at least 10 ms), the output stages are switched off for approximately 500 ms; after this time, a check is made to see whether the short-circuit is still present C the power dissipation in any short-circuit condition is very low. during start-up/shutdown, when the product is internally muted temperature prewarning: C a prewarning (junction temperature > 145 c) indicates that the temperature protection will become active. the prewarning can be used to reduce the input signal and thus reduce the power dissipation. offset detection: C one of the channels has a dc output voltage greater than 2 v. limiting values in accordance with the absolute maximum rating system (iec 60134). thermal characteristics note 1. the value of r th(c-h) depends on the application (see fig.5). symbol parameter conditions min. max. unit v p supply voltage operating - 18 v non-operating - 30 v load dump; t r > 2.5 ms - 45 v v p(sc) short-circuit safe voltage - 18 v v rp reverse polarity voltage - 6v i orm repetitive peak output current - 4a p tot total power dissipation - 60 w t stg storage temperature - 55 +150 c t vj virtual junction temperature - 150 c t amb ambient temperature - 40 +85 c symbol parameter conditions value unit r th(j-c) thermal resistance from junction to case note 1 1.3 k/w r th(j-a) thermal resistance from junction to ambient in free air 40 k/w
2004 jan 27 8 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 heatsink design there are two parameters that determine the size of the heatsink. the first is the rating for the virtual junction temperature and the second is the ambient temperature at which the amplifier must still deliver its full power in the btl mode. with a conventional btl amplifier, the maximum power dissipation with a music-like signal (at each amplifier) will be approximately two times 6.5 w. at a virtual junction temperature of 150 c and a maximum ambient temperature of 65 c, r th(vj-c) = 1.3 k/w and r th(c-h) = 0.2 k/w, the thermal resistance of the heatsink should be: compared to a conventional btl amplifier, the tda1564 has a higher efficiency. the thermal resistance of the heatsink should be: 150 65 C 2 6.5 ---------------------- 1.3 C 0.2 C 5 k/w = 1.7 145 65 C 2 6.5 ---------------------- ? ?? 1.3 C 0.2 C 9 k/w = fig.5 thermal equivalent resistance network. handbook, halfpage 3.6 k/w 0.6 k/w 3.6 k/w virtual junction out 1 out 1 case 3.6 k/w 0.6 k/w 3.6 k/w out 2 out 2 mgc424 0.1 k/w
2004 jan 27 9 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 dc characteristics v p = 14.4 v; t amb =25 c; measured in fig.9; unless otherwise speci?ed. notes 1. the circuit is dc biased at v p = 6 to 18 v and ac operating at v p =8to18v. 2. if the junction temperature exceeds 150 c, the output power is limited to 5 w per channel. symbol parameter conditions min. typ. max. unit supplies v p supply voltage note 1; fig.17 6.0 14.4 18.0 v i q(tot) total quiescent current r l = ; fig.16 - 95 150 ma i stb standby current - 150 m a v cse average electrolytic capacitor voltage at pin 4 - 7.1 - v ?d v o ? dc output offset voltage on state -- 100 mv mute state -- 100 mv mode select switch ; see fig.6 v mode voltage at mode select pin standby condition 0 - 1v mute condition 2 - 3v on condition 4 5 v p v i mode(sw) switch current through pin 6 v mode =5v - 25 40 m a diagnostic v diag output voltage at the diagnostic output pin i diag = 2 ma; during any fault condition or clip detect -- 0.5 v i diag current through the diagnostic pin during any fault condition or clip detect 2 -- ma v o(dc) dc output voltage detection levels 1.4 2 2.5 v protection t pre prewarning temperature - 145 - c t dis(btl) btl disable temperature note 2 - 150 - c
2004 jan 27 10 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 handbook, halfpage mgr176 18 v mode (v) 4 3 2 1 0 mute operating standby fig.6 switching levels of the mode select pin.
2004 jan 27 11 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 ac characteristics v p = 14.4 v; r l =4 w ; c cse = 1000 m f; f = 1 khz; t amb =25 c; measured in fig.9; unless otherwise speci?ed. notes 1. the distortion is measured with a bandwidth of 10 hz to 30 khz. 2. frequency response externally fixed (input capacitors determine the low frequency roll-off). 3. the se to btl switch voltage level depends on the value of v p . 4. noise output voltage measured with a bandwidth of 20 hz to 20 khz. 5. noise output voltage is independent of r s . symbol parameter conditions min. typ. max. unit p o output power thd = 0.5 %; fig.18 15 19 - w thd = 10 %; fig.18 23 25 - w eiaj - 38 - w v p = 13.2 v; thd = 0.5 % - 16 - w v p = 13.2 v; thd = 10 % - 20 - w thd total harmonic distortion p o = 1 w; note 1; fig.19 - 0.1 - % p power dissipation see figs 12 and 13 w b p power bandwidth thd = 1 %; p o = - 1 db with respect to 15 w - 20 to 15000 - hz f ro(l) low frequency roll-off - 1 db; note 2 - 25 - hz f ro(h) high frequency roll-off - 1 db 130 -- khz g v closed-loop voltage gain p o = 1 w; fig.21 25 26 27 db svrr supply voltage ripple rejection r s =0 w ; v ripple = 2 v (p-p); fig.22 on/mute 45 65 - db standby; f = 100 hz to 10 khz 45 -- db cmrr common mode rejection ratio r s =0 w 70 90 - db ? z i ? input impedance 90 120 150 k w ?d z i ? mismatch in input impedance - 1 - % v se-btl se to btl switch voltage level note 3 - 3 - v ? v out ? output voltage mute (rms value) v i = 1 v (rms) - 100 150 m v v n(o) noise output voltage on; r s =0 w ; note 4 - 100 150 m v on; r s =10k w ; note 4 - 105 -m v mute; note 5 - 100 150 m v a cs channel separation r s =0 w ; p o = 15 w; fig.23 40 70 - db ?d g v ? channel unbalance -- 1db
2004 jan 27 12 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 handbook, halfpage mgr177 v o clip 0 0 t fig.7 clip detection waveforms. handbook, halfpage mgw246 maximum current short-circuit to supply pins short-circuit to ground short-circuit removed 500 ms 500 ms 500 ms 10 m s i o diag 0 max max t t fig.8 protection waveforms. (1)
2004 jan 27 13 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 test and application information handbook, full pagewidth mgw247 3 cin 25 k w 60 k w 60 k w 60 k w 60 k w v ref out2 - out2 + 10 11 cse 4 2 in1 - 1 in1 + out1 + out1 - 8 7 standby logic clip and diagnostic 6121415 mode oc2 oc1 diag 9 gnd v p2 13 v p1 5 TDA1564J 10 m f 1000 m f 220 nf 0.5r s 220 nf 0.5r s + - + - v ms v p v logic r pu 16 in2 - 17 in2 + 220 nf 0.5r s 100 nf 100 nf 3.9 w 4 w 3.9 w 100 nf 100 nf 3.9 w 4 w 3.9 w 220 nf 0.5r s + - + - 220 nf 2200 m f signal ground power ground 22 m f 22 m f fig.9 application diagram (TDA1564J). connect boucherot filter to pin 8 or pin 10 with the shortest possible connection.
2004 jan 27 14 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 handbook, full pagewidth mgw248 sgnd sgnd diag rl 2000 on mute TDA1564J tda1565j off in2 in1 gnd v p out1 out2 fig.10 pcb layout (component side) for the application of fig.9. dimensions in mm.
2004 jan 27 15 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 handbook, full pagewidth mgw249 in2 gnd high efficiency cool power continuous offset detection in1 1 17 out1 out2 v p 220 nf 220 nf 220 nf 100 nf 100 nf 100 nf 100 nf 4.7 k w 2.7 k w 24 k w 3.9 w 3.9 w 3.9 w fig.11 pcb layout (soldering side) for the application of fig.9. dimensions in mm.
2004 jan 27 16 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 handbook, halfpage 020 25 0 5 mgw250 10 15 20 48 (1) (2) 12 16 p o (w) p (w) fig.12 power dissipation as a function of output power; sine wave driven. input signal 1 khz, sinusoidal; v p = 14.4 v. (1) for a conventional btl amplifier. (2) for tda1564. handbook, halfpage 010 25 0 5 mgw251 10 15 20 24 (1) (2) 68 p o (w) p (w) fig.13 power dissipation as a function of output power; pink noise through iec-60268 filter. (1) for a conventional btl amplifier. (2) for tda1564. 430 w input output 330 w 3.3 k w 3.3 k w 10 k w 91 nf 68 nf 470 nf 2.2 m f 2.2 m f mgc428 fig.14 iec-60268 filter.
2004 jan 27 17 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 handbook, full pagewidth mgw252 3 cin 25 k w 60 k w 60 k w 60 k w 60 k w v ref out2 - out2 + 10 11 cse 4 2 in1 - 1 in1 + out1 + out1 - 8 7 v p2 13 v p1 5 TDA1564J 10 m f 1000 m f 220 nf 220 nf iec-60268 filter pink noise + - + - v p 16 in2 - 17 in2 + 220 nf 100 nf 100 nf 3.9 w 4 w 3.9 w 100 nf 100 nf 3.9 w 4 w 3.9 w 220 nf + - + - 220 nf 2200 m f signal ground power ground interface 6121415 mode oc2 oc1 diag diag offset ms 9 gnd v ms v logic r pu 22 m f 22 m f fig.15 test and application diagram for dissipation measurements with a music-like signal (pink noise).
2004 jan 27 18 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 fig.16 quiescent current as a function of supply voltage. v mode = 5 v; r i = . handbook, halfpage 0 5 10 20 15 25 150 50 0 100 mgw253 v p (v) i p (ma) handbook, halfpage 0 200 100 150 50 0 1 1 5 mgw254 2 2 3 3 4 v mode (v) i p (ma) fig.17 supply current as a function of v mode . v p = 14.4 v (1) standby. (2) mute. (3) operating. handbook, halfpage 8 40 20 30 10 0 10 18 mgw255 12 14 16 v p (v) (1) (2) (3) p o (w) fig.18 output power as a function of supply voltage. (1) tdh+n=10%. (2) tdh+n=2.5%. (3) tdh+n=0.5%. handbook, halfpage mgw256 10 - 1 1 p o (w) thd + n (%) 10 10 2 10 - 2 10 - 2 10 - 1 1 10 10 2 (2) (3) (1) fig.19 thd + noise as a function of output power. (1) f = 10 khz. (2) f = 1 khz. (3) f = 100 khz.
2004 jan 27 19 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 handbook, halfpage mgw257 thd + n (%) 10 - 2 10 - 1 1 10 10 10 2 10 3 10 4 10 5 f (hz) (1) (2) fig.20 thd + noise as a function of frequency. (1) p o =10w. (2) p o =1w. handbook, halfpage 20 24 28 26 22 mgw258 10 g v (db) 10 2 10 3 10 4 10 5 f (hz) 10 6 fig.21 voltage gain as a function of frequency. handbook, halfpage - 120 - 20 - 100 - 80 - 60 - 40 mgw259 10 10 2 10 3 10 4 10 5 f (hz) svrr (db) (1) (2) fig.22 svrr as a function of frequency. (1) on/mute. (2) standby. handbook, halfpage - 120 - 20 - 100 - 80 - 60 - 40 mgw260 10 10 2 10 3 10 4 10 5 f (hz) a cs (db) (1) (2) fig.23 channel separation as a function of frequency. (1) p o2 =10w. (2) p o2 =1w.
2004 jan 27 20 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 handbook, full pagewidth mbh691 0 1 2 t (ms) 3 1/2 v p 1/2 v p 0 - v p v p v p 0 v p v load v master v slave 0 fig.24 output waveforms. see fig.9 v load =v 7 - v 8 or v 11 - v 10 . v master =v 7 or v 11 . v slave =v 8 or v 10 .
2004 jan 27 21 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 application notes advantages of high ef?ciency 1. power conversion improvement (power supply): usually, the fact that the reduction of dissipation is directly related to supply current reduction, is neglected. one advantage is less voltage drop in the whole supply chain. another advantage is less stress for the coil in the supply line. even the adapter or supply circuit remains cooler than before due to the reduced heat dissipation in the whole chain because more supply current will be converted into output power. 2. power dissipation reduction: this is the best known advantage of high efficiency amplifiers. 3. heatsink size reduction: the heatsink size of a conventional amplifier may be reduced with approximately 50 % at v p = 14.4 v when the tda1564 will be used. in that case, the maximum heatsink temperature will remain the same. 4. heatsink temperature reduction: the power dissipation and the thermal resistance of the heatsink determine the heatsink temperature rise. when the same heatsink size is used from a conventional amplifier, the maximum heatsink temperature decreases and also the maximum junction temperature, which extends the life of this semiconductor device. the maximum dissipation with music-like input signals decreases by 40 %. it is clear that the use of the tda1564 saves a significant amount of energy. the maximum supply current decreases by approximately 32 %, that reduces the dissipation in the amplifier as well as in the whole supply chain. the tda1564 allows a heatsink size reduction of approximately 50 % or the heatsink temperature decreases by 40 % when the heatsink size hasnt been changed. advantage of the concept used by tda1564 the tda1564 is highly efficient under all conditions, because it uses a single-ended capacitor to create a non-dissipating half supply voltage. other concepts rely on the fact that both input signals are the same in amplitude and phase. with the concept of a se capacitor it means that it doesnt matter what kind of signal processing is done on the input signals. for example, amplitude difference, phase shift or delays between both input signals, or other dsp processing, have no impact on the efficiency. handbook, halfpage mgs824 supply current reduction of 32% heatsink size reduction of 50% same heatsink size same junction temperature heatsink temperature reduction of 40% power dissipation reduction of 40% at p o = 1.6 w v p = 14.4 v choice fig.25 heatsink design.
2004 jan 27 22 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 internal pin configurations pin name equivalent circuit tda1564th TDA1564J 17, 18, 13, 14 and 19 1, 2, 16, 17 and 3 in1+, in1 - , in2 - , in2+ and cin 16 4 cse 2 6 mode mgr182 1, 2, 16, 17 17, 18, 13, 14 3 19 v p1, v p2 v p1, v p2 j mgw261 4 16 v p2 j th mgw262 6 2 j th
2004 jan 27 23 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 3, 8 7, 11 out1 - , out2+ 4, 7 8, 10 out1+, out2 - 9, 12 12, 14 oc1, oc2 15 15 diag pin name equivalent circuit tda1564th TDA1564J mgr185 4 v p1, v p2 7, 11 16 3, 8 j j th t h mgr186 4 v p1, v p2 8, 10 16 4, 7 j j th t h mgw263 v p2 12, 14 9, 12 j th mgw264 v p2 15
2004 jan 27 24 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 package outlines unit a 4 (1) references outline version european projection issue date iec jedec jeita mm + 0.08 - 0.04 3.5 0.35 dimensions (mm are the original dimensions) notes 1. limits per individual lead. 2. plastic or metal protrusions of 0.25 mm maximum per side are not included. sot418-3 0 5 10 mm scale hsop20: plastic, heatsink small outline package; 20 leads; low stand-off height sot418-3 a max. detail x a 2 3.5 3.2 d 2 1.1 0.9 h e 14.5 13.9 l p 1.1 0.8 q 1.7 1.5 2.5 2.0 v 0.25 w 0.25 yz 8 0 q 0.07 x 0.03 d 1 13.0 12.6 e 1 6.2 5.8 e 2 2.9 2.5 b p c 0.32 0.23 e 1.27 d (2) 16.0 15.8 e (2) 11.1 10.9 0.53 0.40 a 3 a 4 a 2 (a 3 ) l p q a q d y x h e e c v m a x a b p w m z d 1 d 2 e 2 e 1 e 20 11 1 10 pin 1 index 02-02-12 03-07-23
2004 jan 27 25 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 references outline version european projection issue date iec jedec jeita dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. sot243-1 0 5 10 mm scale d l e a c a 2 l 3 q w m b p 1 d d z e e x h 117 j e h non-concave 99-12-17 03-03-12 dbs17p: plastic dil-bent-sil power package; 17 leads (lead length 12 mm) sot243-1 view b : mounting base side m 2 e v m b unit a e 1 a 2 b p cd (1) e (1) z (1) de d h ll 3 m mm 17.0 15.5 4.6 4.4 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 2.54 v 0.8 12.2 11.8 1.27 e 2 5.08 2.4 1.6 e h 6 2.00 1.45 2.1 1.8 3.4 3.1 4.3 12.4 11.0 q j 0.4 w 0.03 x
2004 jan 27 26 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 soldering introduction this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. wave soldering can still be used for certain surface mount ics, but it is not suitable for fine pitch smds. in these situations reflow soldering is recommended. driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. through-hole mount packages s oldering by dipping or by solder wave typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 c or 265 c, depending on solder material applied, snpb or pb-free respectively. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (t stg(max) ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. m anual soldering apply the soldering iron (24 v or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 and 400 c, contact may be up to 5 seconds. surface mount packages r eflow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 270 c depending on solder paste material. the top-surface temperature of the packages should preferably be kept: below 225 c (snpb process) or below 245 c (pb-free process) C for all the bga, htsson..t and ssop-t packages C for packages with a thickness 3 2.5 mm C for packages with a thickness < 2.5 mm and a volume 3 350 mm 3 so called thick/large packages. below 240 c (snpb process) or below 260 c (pb-free process) for packages with a thickness < 2.5 mm and a volume < 350 mm 3 so called small/thin packages. moisture sensitivity precautions, as indicated on packing, must be respected at all times. w ave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be
2004 jan 27 27 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time of the leads in the wave ranges from 3 to 4 seconds at 250 c or 265 c, depending on solder material applied, snpb or pb-free respectively. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. m anual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c. suitability of ic packages for wave, re?ow and dipping soldering methods notes 1. for more detailed information on the bga packages refer to the (lf)bga application note (an01026); order a copy from your philips semiconductors sales office. 2. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 3. for sdip packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 4. hot bar soldering or manual soldering is suitable for pmfp packages. 5. these transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217 c 10 c measured in the atmosphere of the reflow oven. the package body peak temperature must be kept as low as possible. 6. these packages are not suitable for wave soldering. on versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. on versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 7. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. mounting package (1) soldering method wave reflow (2) dipping through-hole mount cpga, hcpga suitable - suitable dbs, dip, hdip, rdbs, sdip, sil suitable (3) -- through-hole- surface mount pmfp (4) not suitable not suitable - surface mount bga, htsson..t (5) , lbga, lfbga, sqfp, ssop-t (5) , tfbga, uson, vfbga not suitable suitable - dhvqfn, hbcc, hbga, hlqfp, hso, hsop, hsqfp, hsson, htqfp, htssop, hvqfn, hvson, sms not suitable (6) suitable - plcc (7) , so, soj suitable suitable - lqfp, qfp, tqfp not recommended (7)(8) suitable - ssop, tssop, vso, vssop not recommended (9) suitable - cwqccn..l (11) , pmfp (10) , wqccn32l (11) not suitable not suitable -
2004 jan 27 28 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 8. wave soldering is suitable for lqfp, qfp and tqfp packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 9. wave soldering is suitable for ssop, tssop, vso and vssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. 10. hot bar or manual soldering is suitable for pmfp packages. 11. image sensor packages in principle should not be soldered. they are mounted in sockets or delivered pre-mounted on flex foil. however, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. the appropriate soldering profile can be provided on request.
2004 jan 27 29 philips semiconductors preliminary speci?cation high ef?ciency 2 25 w/4 w stereo car radio power ampli?er tda1564 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2004 sca76 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r32/04/pp 30 date of release: 2004 jan 27 document order number: 9397 750 12613

▲Up To Search▲

Price & Availability of TDA1564J

	To Download TDA1564J Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .