7mbr75ge060 igbt modules igbt module 600v / 75a / pim features high speed switching voltage drive low inductance module structure converter diode bridge dynamic brake circuit applications i n v e r ter f or moto r d r i v e ac and dc servo drive amplifier uninterruptible power supply maximum ratings and characteristics absolute maximum ratings (tc=25c unless without specified) item symbol condition ra ting unit collector-emitter voltage gate-emitter voltage collector current collector power disspation collector-emitter voltage gate-emitter voltage collector current collector power disspation repetitive peak reverse voltage average forward current surge current repetitive peak reverse voltage non-repetitive peak reverse voltage average output current surge current (non-repetitive) i2t (non-repetitive) converter brake inverter operating junction temperature storage temperature isolation voltage mounting screw torque v ces v ges i c i cp -i c p c v ces v ges i c i cp p c v rrm i f(av) i fsm v rrm v rsm i o i fsm t j t stg v iso continuous 1ms 1 device continuous 1ms 1 device 10ms 50/60hz sine wave tj=150c, 10ms tj=150c, 10ms ac : 1 minute 600 20 75 150 75 300 600 20 50 100 200 600 1 50 800 900 50 350 648 +150 -40 to +125 ac 2500 1.7 * 1 v v a a a w v v a a w v a a v v a a a2s c c v nm * 1 recommendable value : 1.3 to 1.7 nm (m4)
electrical characteristics (tj=25c unless without specified) item symbol condition characteristics unit min. typ. max. zero gate voltage collector current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage collector-emitter voltage input capacitance switching time reverse recovery time of frd zero gate voltage collector current gate-emitter leakage current collector-emitter saturation voltage switching time reverse current reverse recovery time forward voltage reverse current converter brake brake (igbt) inverter (igbt) (fwd) i ces i ges v ge(th) v ce(sat) -v ce c ies t on t r t off t f t rr i ces i ges v ce(sat) t on t r t off t f i rrm t rr v fm i rrm v ce =600v, v ge =0v v ce =0v, v ge =20v v ce =20v, i c =75ma v ge =15v chip i c =75a terminal -i c =75a chip terminal v ge =0v, v ce =10v, f=1mhz v cc =300v i c =75a v ge =15v r g =33 ohm i f =75a v ces =600v, v ge =0v v ce =0v, v ge =20v i c =50a, v ge =15v v cc =300v i c =50a v ge =15v r g =51ohm v r =600v i f =50a v r =800v 1.0 0.2 8.5 2.8 3.1 3.0 3.3 1.2 0.6 1.0 0.35 0.3 1.0 0.1 2.8 0.8 0.6 1.0 0.35 1 0.6 1.55 1.0 6000 5.5 ma a v v v v v pf s s s s s ma a v s s s s ma s v ma item symbol condition characteristics unit min. typ. max. inverter igbt inverter frd brake igbt brake frd converter diode with thermal compound 0.42 1.10 0.63 c/w 3.57 2.10 0.05 thermal resistance ( 1 device ) rth(j-c) contact thermal resistance * rth(c-f) thermal characteristics igbt module 7mbr75ge060 * this is the value which is defined mounting on the additional cooling fin with thermal compound equivalent circuit schematic
igbt module 7mbr75ge060 characteristics (representative) collector current vs. collector-emitter voltage tj=25c collector current vs. collector-emitter voltage tj=125c collector-emitter vs. gate-emitter voltage tj=25c collector-emitter vs. gate-emitter voltage tj=125c switching time vs. collector current vcc=300v, rg=33 ohm, vge=15v, tj=25c switching time vs. collector current vcc=300v, rg=33 ohm, vge=15v, tj=125c collector-emitter voltage : vce [v] collector-emitter voltage : vce [v] collector current : ic [a] collector current : ic [a] 125 100 75 50 25 0 0 0 1 2 3 4 5 6 collector-emitter voltage : vce [v] collector-emitter voltage : vce [v] 10 8 6 4 2 0 0 5 10 15 20 25 0 5 10 15 20 25 0 gate-emitter voltage : vge [v] gate-emitter voltage : vge [v] switching time : ton, tr, toff, tf [n sec.] 1000 100 10 0 25 50 75 100 125 collector current : ic [a] collector current : ic [a] switching time : ton, tr, toff, tf [n sec.] 1000 100 10 inverter 150 175 125 100 75 50 25 150 175 0 1 2 3 4 5 6 10 8 6 4 2 0 25 50 75 100 125 150
igbt module 7mbr75ge060 switching time vs. rg vcc=300v, ic=75a, vge=15v, tj=25c dynamic input characteristics tj=25c gate resistance : rg [ohm] 100 gate charge : qg [nc] 0 200 400 600 800 1000 1200 100 1000 500 400 300 200 100 0 switching time : ton, tr, toff, tf [n sec.] collector-emitter voltage : vce [v] forward current : if [a] 0 0 1 2 3 4 gate-emitter voltage : vge [v] 0 5 15 20 25 forward voltage : vf [v] reverse recovery current : irr [a] reverse recovery time : trr [n sec.] forward current vs. forward voltage vge=0v reverse recovery characteristics trr, irr, vs. if forward current : if [a] 10 100 thermal resistance : rth (j-c) [c/w] transient thermal resistance 0.1 1 0.001 0.01 0.1 1 pulse width : pw [sec.] reversed biased safe operating area +vge=15v, -vge = 15v, tj = 125c, rg = 33 ohm 0 25 50 75 100 125 150 << > 500 400 300 200 100 0 0 100 200 300 400 500 600 collector-emitter voltage : vce [v] collector current : ic [a] 10 10 10 125 100 75 50 25 150 175 0.01 600 700
igbt module 7mbr75ge060 switching loss vs. collector current vcc=300v, rg=33 ohm, vge=15v switching loss : eon, eoff, err [mj /cycle] collector current : ic [a] 0 4 2 6 8 0 25 50 75 100 125 150 collector-emitter voltage : vce [v] 0 5 10 15 20 25 30 35 0.1 1 10 capacitance : cies, coes, cres [nf] capacitance vs. collector-emitter voltage tj=25c forward current : if [a] 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 forward voltage : vf [v] converter diode forward current vs. forward voltage 10
igbt module 7mbr75ge060 collector current vs. collector-emitter voltage tj=25c collector current vs. collector-emitter voltage tj=125c collector-emitter vs. gate-emitter voltage tj=25c collector-emitter vs. gate-emitter voltage tj=125c switching time vs. collector current vcc=300v, rg=51 ohm, vge=15v, tj=25c switching time vs. collector current vcc=300v, rg=51 ohm, vge=15v, tj=125c collector-emitter voltage : vce [v] collector-emitter voltage : vce [v] collector current : ic [a] collector current : ic [a] 125 100 75 50 25 0 0 0 1 2 3 4 5 0 1 2 3 4 5 collector-emitter voltage : vce [v] collector-emitter voltage : vce [v] 10 8 6 4 2 0 0 5 10 15 20 25 0 5 10 15 20 25 10 8 6 4 2 0 gate-emitter voltage : vge [v] gate-emitter voltage : vge [v] switching time : ton, tr, toff, tf [n sec.] 1000 100 10 0 20 40 60 80 collector current : ic [a] collector current : ic [a] switching time : ton, tr, toff, tf [n sec.] 1000 100 10 125 100 75 50 25 0 20 40 60 80 brake
igbt module 7mbr75ge060 switching time vs. rg vcc=300v, ic=50a, vge=15v, tj=25c dynamic input characteristics tj=25c gate resistance : rg [ohm] gate charge : qg [nc] 0 50 100 150 200 250 300 100 1000 500 400 300 200 100 0 switching time : ton, tr, toff, tf [n sec.] collector-emitter voltage : vce [v] gate-emitter voltage : vge [v] 0 5 10 15 20 25 thermal resistance : rth (j-c) [c/w] transient thermal resistance 0.1 1 0.001 0.01 0.1 1 pulse width pw [sec.] reversed biased safe operating area +vge=15v, -vge = 15v, tj = 125c, rg = 51 ohm << > 500 400 300 200 100 0 0 100 200 300 400 500 600 collector-emitter voltage : vce [v] collector current : ic [a] 100 collector-emitter voltage : vce [v] 0 5 10 15 20 25 30 35 0.1 1 capacitance : cies, coes, cres [nf] capacitance vs. collector-emitter voltage tj=25c 10 10 10
igbt module 7mbr75ge060 outline drawings, mm
|
