1 publication date: august 2002 sjc00046bed transistors 2sb0643, 2sb0644 (2sb643, 2sb644) silicon pnp epitaxial planar type for low-power general amplification complementary to 2sd0638 (2sd638) and 2sd0639 (2sd639) features ? m type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board absolute maximum ratings t a = 25 c unit: mm parameter symbol rating unit collector to 2sb0643 v cbo ? 30 v base voltage 2sb0644 ? 60 collector to 2sb0643 v ceo ? 25 v emitter voltage 2sb0644 ? 50 emitter to base voltage v ebo ? 7v peak collector current i cp ? 1a collector current i c ? 0.5 a collector power dissipation p c 600 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = ? 20 v, i e = 0 ? 100 na i ceo v ce = ? 20 v, i b = 0 ? 1 a collector to base 2sb0643 v cbo i c = ? 10 a, i e = 0 ? 30 v voltage 2sb0644 ? 60 collector to emitter 2sb0643 v ceo i c = ? 2 ma, i b = 0 ? 25 v voltage 2sb0644 ? 50 emitter to base voltage v ebo i e = ? 10 a, i c = 0 ? 7v forward current transfer ratio * 1 h fe1 * 2 v ce = ? 10 v, i c = ? 150 ma 85 340 h fe2 v ce = ? 10 v, i c = ? 500 ma 40 90 collector to emitter saturation voltage * 1 v ce(sat) i c = ? 300 ma, i b = ? 30 ma ? 0.35 ? 0.6 v transition frequency f t v cb = ? 10 v, i e = 10 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 6 15 pf electrical characteristics t a = 25 c rank q r s h fe1 85 to 170 120 to 240 170 to 340 1: base 2: collector 3: emitter m-a1 package 6.9 0.1 2.5 0.1 (1.0) (1.0) (1.5) (0.85) 0.45 0.05 0.55 0.1 (2.5) (2.5) 21 3 r 0.7 r 0.9 (0.4) 3.5 0.1 4.5 0.1 4.1 0.2 2.4 0.2 1.25 0.05 2.0 0.2 1.0 0.1 (1.5) note) the part numbers in the parenthesis show conventional part number. note) * 1: pulse measurement * 2: h fe rank classification
2sb0643, 2sb0643a 2 sjc00046bed p c t a i c v ce i c i b v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb i ceo t a 0 160 40 120 80 140 20 100 60 0 800 600 200 500 700 400 100 300 collector power dissipation p c ( mw ) ambient temperature t a ( c ) 0 20 16 4 12 8 0 800 600 200 500 700 400 100 300 t a 25 c i b 10 ma 9 ma 8 ma 7 ma 6 ma 5 ma 4 ma 3 ma 2 ma 1 ma collector current i c ( ma ) collector to emitter voltage v ce ( v ) 0 10 8 2 6 4 0 800 600 200 500 700 400 100 300 v ce 10 v t a 25 c base current i b ( ma ) collector current i c ( ma ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c / i b 10 t a 75 c 25 c 25 c collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c / i b 10 t a 25 c 75 c 25 c base to emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0 600 500 400 300 200 100 v ce 10 v t a 75 c 25 c 25 c forward current transfer ratio h fe collector current i c ( a ) 13 10 550 2 20 30 100 0 240 200 160 120 80 40 v cb 10 v t a 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 1 3 10 5 50 2 20 30 100 0 24 20 16 12 8 4 i e 0 f 1 mhz t a 25 c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 200 160 40 120 80 1 10 10 2 10 3 10 4 v ce 10 v ambient temperature t a ( c ) i ceo ( t a ) i ceo ( t a 25 c )
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technologies described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteris- tics and applied circuits examples of the products. it neither warrants non-infringement of intellec- tual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) the products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instru- ments and household appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifications satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maxi- mum rating, the range of operating power supply voltage, and heat radiation characteristics. other- wise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2002 jul
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