tsb1590 low vcesat pnp transistor 1 / 1 version: a09 sot - 23 product summary bv cbo - 4 0v bv ceo - 25 v i c - 1 a v ce(sat) - 0.18 v @ i c / i b = - 500ma / - 50 ma features low v ce(sat) - 0.4 @ i c / i b = - 150ma / - 15ma complementary part with tsd2444 structure epitaxial planar type pnp silicon transistor ordering information part no. package pa cking tsb1590cx rf sot - 23 3kpcs / 7 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit collector - base voltage v cbo - 40 v collector - emitter voltage v ceo - 25 v emitter - base voltage v ebo - 6 v collector current i c - 1 a collector power dissipation p d 225 m w thermal resistance, junction to ambient r ja 556 o c /w operating junction temperature t j +150 o c operating junction and storage temperature range t st g - 55 to +150 o c note: single pulse, pw 350us, duty 2% electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit collector - base breakdown voltage i c = - 5 0ua, i e = 0 bv cbo - 4 0 -- -- v collector - emitter breakdown voltage i c = - 1 ma, i b = 0 bv ceo - 25 -- -- v emitter - base breakdown voltage i e = - 5 0ua, i c = 0 bv ebo - 6 -- -- v collector cutoff current v cb = - 35 v, i e = 0 i cbo -- -- - 1 00 n a emitter cutoff current v eb = - 6 v, i c = 0 i ebo -- -- - 100 n a collector - emitter saturation voltage i c / i b = - 500m a / - 50 m a * v ce(sat) -- - 0.18 - 0. 4 v base - emitter saturation voltage i c / i b = - 500m a / - 5 0m a * v b e(sat) -- - 0.9 - 1.3 v v ce = - 3 v, i c = - 100m a * h fe 1 120 -- 560 dc current transfer ratio v ce = - 3 v, i c = - 800m a * h fe 2 80 -- -- transitio n frequency v ce = - 5v, i c = - 5 0m a, f=100mhz f t -- 150 -- mhz output capacitance v cb = - 1 0v, f=1mhz cob -- 15 -- pf * pulse test: pulse width 380us, duty cycle 2% pin definition : 1. base 2. emitter 3. collector
tsb1590 low vcesat pnp transistor 2 / 2 version: a09 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) figure 1. dc current gain figure 2. v ce(sat ) v.s. ic figure 3. v be(sat ) v.s. ic figure 4. cutoff frequency vs. ic figure 5 . power derating curve
tsb1590 low vcesat pnp transistor 3 / 3 version: a09 sot - 23 mechanical drawing sot - 23 dimension millimeters inches dim min max min max. a 0.95 bsc 0.037 bsc a1 1.9 bsc 0.074 bsc b 2.60 3.00 0.102 0.118 c 1.40 1.70 0.055 0.067 d 2.80 3.10 0.110 0.122 e 1.00 1.30 0.039 0.051 f 0.00 0.10 0.000 0.004 g 0.35 0.50 0.014 0.020 h 0.10 0.20 0.004 0.008 i 0.30 0.60 0.012 0.024 j 5 10 5 10
tsb1590 low vcesat pnp transistor 4 / 4 version: a09 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license , express or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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