2sd2121(l)/(s) silicon npn epitaxial application low frequency power amplifier complementary pair with 2sb1407(l)/(s) outline 4 1 2 3 4 3 2 1 1. base
2. collector
3. emitter
4. collector dpak s type l type absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 35 v collector to emitter voltage v ceo 35 v emitter to base voltage v ebo 5v collector current i c 2.5 a collector peak current i c(peak) 3a collector power dissipation p c * 1 18 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c.
2sd2121(l)/(s) 2 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 35 v i c = 1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo 35 v i c = 10 ma, r be = emitter to base breakdown voltage v (br)ebo 5vi e = 1 ma, i c = 0 collector cutoff current i cbo 20 a v cb = 35 v, i e = 0 dc current transfer ratio h fe1 * 1 60 320 v ce = 2 v, i c = 0.5 a* 2 h fe2 20 v ce = 2 v, i c = 1.5 a* 2 base to emitter voltage v be 1.5 v v ce = 2 v, i c = 1.5 a* 2 collector to emitter saturation voltage v ce(sat) 1.0 v i c = 2 a, i b = 0.2 a* 2 notes: 1. the 2sd2121(l)/(s) is grouped by h fe1 as follows. bcd 60 to 120 100 to 200 160 to 320 2. pulse test. maximum collector dissipation curve 30 20 10 0 50 100 150 case temperature t c ( c) collector power dissipation p c (w) 10 1.0 3.0 collector current i c (a) 0.3 0.1 110 3 30 100 collector to emitter voltage v ce (v) ta = 25 c
1 shot pulse i c(peak) i c(max) 1 ms area of safe operation dc operation
(t c = 25 c) pw = 10 ms
2sd2121(l)/(s) 3 ta = 25 c i b = 0 2.0 1.6 1.2 0.8 0.4 0 collector current i c (a) 1 collector to emitter voltage v ce (v) 3 25 4 typical output characteristics 2 ma 4 10 12 14 16 6 8 1,000 300 30 100 10 0.03 0.1 dc current transfer ratio h fe 0.3 collector current i c (a) 1.0 3.0 v ce = 2 v
ta = 25 c dc current transfer ratio
vs. collector current collector to emitter saturation voltage
vs. collector current 1.0 0.3 0.1 collector to emitter saturation voltage v ce(sat) (v) 0.03 0.01 0.03 0.3 0.1 1.0 3.0 collector current i c (a) i c = 10 i b
ta = 25 c 2.0 1.6 1.2 0.8 0.4 0 collector current i c (a) 0.4 base to emitter voltage v be (v) 1.2 0.8 2.0 1.6 typical transfer characteristics v ce = 2 v
ta = 25 c
2sd2121(l)/(s) 4 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd.
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