2sd2121(l)/(s) silicon npn epitaxial application low frequency power amplifier complementary pair with 2sb1407(l)/(s) outline 4 1 2 3 4 3 2 1 1. base
2. collector
3. emitter
4. collector dpak s type l type absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 35 v collector to emitter voltage v ceo 35 v emitter to base voltage v ebo 5v collector current i c 2.5 a collector peak current i c(peak) 3a collector power dissipation p c * 1 18 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at t c = 25c.
2sd2121(l)/(s) 2 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 35 v i c = 1 ma, i e = 0 collector to emitter breakdown voltage v (br)ceo 35 v i c = 10 ma, r be = emitter to base breakdown voltage v (br)ebo 5vi e = 1 ma, i c = 0 collector cutoff current i cbo 20 a v cb = 35 v, i e = 0 dc current transfer ratio h fe1 * 1 60 320 v ce = 2 v, i c = 0.5 a* 2 h fe2 20 v ce = 2 v, i c = 1.5 a* 2 base to emitter voltage v be 1.5 v v ce = 2 v, i c = 1.5 a* 2 collector to emitter saturation voltage v ce(sat) 1.0 v i c = 2 a, i b = 0.2 a* 2 notes: 1. the 2sd2121(l)/(s) is grouped by h fe1 as follows. bcd 60 to 120 100 to 200 160 to 320 2. pulse test. maximum collector dissipation curve 30 20 10 0 50 100 150 case temperature t c ( c) collector power dissipation p c (w) 10 1.0 3.0 collector current i c (a) 0.3 0.1 110 3 30 100 collector to emitter voltage v ce (v) ta = 25 c
1 shot pulse i c(peak) i c(max) 1 ms area of safe operation dc operation
(t c = 25 c) pw = 10 ms
2sd2121(l)/(s) 3 ta = 25 c i b = 0 2.0 1.6 1.2 0.8 0.4 0 collector current i c (a) 1 collector to emitter voltage v ce (v) 3 25 4 typical output characteristics 2 ma 4 10 12 14 16 6 8 1,000 300 30 100 10 0.03 0.1 dc current transfer ratio h fe 0.3 collector current i c (a) 1.0 3.0 v ce = 2 v
ta = 25 c dc current transfer ratio
vs. collector current collector to emitter saturation voltage
vs. collector current 1.0 0.3 0.1 collector to emitter saturation voltage v ce(sat) (v) 0.03 0.01 0.03 0.3 0.1 1.0 3.0 collector current i c (a) i c = 10 i b
ta = 25 c 2.0 1.6 1.2 0.8 0.4 0 collector current i c (a) 0.4 base to emitter voltage v be (v) 1.2 0.8 2.0 1.6 typical transfer characteristics v ce = 2 v
ta = 25 c
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