1/7 www.dynexsemi.com DFM100PXM33-A000 features low reverse recovery charge high switching speed low forward voltage drop isolated base mmc baseplate with aln substrates applications chopper diodes boost and buck converters free-wheel circuits snubber circuits resonant converters induction heating multi-level switch inverters the DFM100PXM33-A000 module houses a series connected pair of 3300 volt, fast recovery diodes (frds). designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. configurations with common cathode and common anode are available on request. fast switching times and low reverse recovery losses allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. these modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ordering information order as: DFM100PXM33-A000 - series connection DFM100PXM33-A005 - common cathode DFM100PXM33-A006 - common anode note: when ordering, please use the complete part number. DFM100PXM33-A000 fast recovery diode module ds5564-1.1 october 2002 key parameters v rrm 3300v v f (typ) 2.5v i f (max) 100a i fm (max) 200a fig. 1 circuit diagrams fig. 2 electrical connections - (not to scale) outline type code: p (see package details for further information) 1(a2/k1) 2(k2) 3(a1) series connection, part number: DFM100PXM33-A000 1(k2/k1) 2(a2) 3(a1) common cathode, part number: DFM100PXM33-A005 1(a2/a1) 2(k2) 3(k1) common anode, part number: DFM100PXM33-A006
DFM100PXM33-A000 2/7 www.dynexsemi.com units v a a ka 2 s w kv pc absolute maximum ratings stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25?c unless stated otherwise symbol v rrm i f i fm i 2 t pmax v isol q pd test conditions t vj = 125?c dc, t case = 70?c t case = 115?c, t p = 1ms v r = 0, t p = 10ms, t vj = 125?c t case = 25?c, t vj = 125?c commoned terminals to base plate. ac rms, 1 min, 50hz iec1287. v 1 = 2450v, v 2 = 1800v, 50hz rms max. 3300 100 200 10 463 6.0 10 parameter repetitive peak reverse voltage forward current (per arm) max. forward current i 2 t value fuse current rating maximum power dissipation isolation voltage partial discharge test conditions continuous dissipation - junction to case mounting torque 5nm (with mounting grease) - - mounting - m6 electrical connections - m5 parameter thermal resistance - diode (per arm) thermal resistance - case to heatsink (per module) junction temperature storage temperature range screw torque thermal and mechanical ratings symbol r th(j-c) r th(c-h) t j t stg - units ?c/kw ?c/kw ?c ?c nm nm max. 216 16 125 125 5 4 typ. - - - - - - min. - - - ?0 - - internal insulation: aln baseplate material: alsic creepage distance: 20mm clearance: 10mm cti (critical tracking index): 175
3/7 www.dynexsemi.com DFM100PXM33-A000 test conditions v r = 3300v, t vj = 125?c i f = 100a i f = 100a, t vj = 125?c - parameter peak reverse current forward voltage inductance static electrical characteristics t vj = 25?c unless stated otherwise. symbol i rm v f l units ma v v nh max. 10 - - - typ. - 2.5 2.5 30 min. - - - - test conditions i f = 100a, di f /dt = 600a/ s, v r = 1800v parameter reverse recovery current reverse recovery charge reverse recovery energy symbol i rr q rr e rec units a c mj max. - - - typ. 85 60 65 min. - - - dynamic electrical characteristics t vj = 25?c unless stated otherwise. t vj = 125?c unless stated otherwise. test conditions i f = 100a, di f /dt = 500a/ s, v r = 1800v parameter reverse recovery current reverse recovery charge reverse recovery energy symbol i rr q rr e rec units a c mj max. - - - typ. 95 95 110 min. - - -
DFM100PXM33-A000 4/7 www.dynexsemi.com typical characteristics fig. 2 diode typical forward characteristics fig. 4 transient thermal impedance fig. 5 power dissipation fig. 6dc current rating vs case temperature 0 50 100 150 200 250 300 350 400 450 500 0255075100125150 case temperature, t case - ( c) power dissipation, p tot - (w) 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 case temperature, t case - ( c) dc forward current, i f - (a) 1 10 100 1000 0.001 0.01 1 0.1 10 pulse width, t p - (s) transient thermal impedance, z th (j-c) - ( c/kw ) r i (?c/kw) i ( ms) 1 5.909 0.0843 2 31.2918 3.7205 3 44.503 33.2138 4 134.6466 236.5275 0 25 50 75 100 125 150 175 200 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 forward voltage, v f - (v) forward current, i f - (a) t j = 25 ? c t j = 125 ? c v f is measured at power busbars and not the auxiliary terminals
5/7 www.dynexsemi.com DFM100PXM33-A000 fig. 7 rbsoa 0 100 50 200 300 150 250 350 0 500 1000 1500 2000 2500 3000 3500 reverse voltage, v r - (v) reverse recovery current, i rr - (a) t j = 125 ? c
DFM100PXM33-A000 6/7 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 550g module outline type code: p
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 sales offices benelux, italy & switzerland: tel: +33 (0)1 64 66 42 17. fax: +33 (0)1 64 66 42 19. france: tel: +33 (0)2 47 55 75 52. fax: +33 (0)2 47 55 75 59. germany, northern europe, spain & rest of world: tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 north america: tel: (440) 259-2060. fax: (440) 259-2059. tel: (949) 733-3005. fax: (949) 733-2986. these offices are supported by representatives and distributors in many countries world-wide. ?dynex semiconductor 2003 technical documentation ?not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification.
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