2n3906 vishay semiconductors formerly general semiconductor document number 88114 www.vishay.com 07-may-02 1 new product small signal transistor (pnp) features ?pnp silicon epitaxial planar transistor for switching and amplifier applications. ?as complementary type, the npn transistor 2n3904 is recommended. ?on special request, this transistor is also manufactured in the pin configuration to-18. ?this transistor is also available in the sot-23 case with the type designation mmbt3906. mechanical data case: to-92 plastic package weight: approx. 0.18g packaging codes/options: e6/bulk 5k per container, 20k/box e7/4k per ammo mag., 20k/box maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit collector-emitter voltage v ceo 40 v collector-base voltage v cbo 40 v emitter-base voltage v ebo 5.0 v collector current i c 200 ma power dissipation t a = 25 c p tot 625 mw t c = 25 c 1.5 w thermal resistance junction to ambient air r ja 250 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) valid provided that leads are kept at ambient temperature. 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) 0.098 (2.5) max. ? 0.022 (0.55) bottom view to-226aa (to-92) dimensions in inches and (millimeters)
2n3906 vishay semiconductors formerly general semiconductor www.vishay.com document number 88114 2 07-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit -v ce = 1 v, -i c = 0.1 ma 60 -v ce = 1 v, -i c = 1 ma 80 dc current gain h fe - v ce = 1 v, -i c = 10 ma 100 300 -v ce = 1 v, -i c = 50 ma 60 -v ce = 1 v, -i c = 100 ma 30 collector-emitter cutoff current -i cev -v eb = 3 v, -v ce = 30 v 50 na emitter-base cutoff current -i ebv -v eb = 3 v, -v ce = 30 v 50 na collector saturation voltage -v cesat -i c = 10 ma, -i b = 1 ma 0.25 v -i c = 50 ma, -i b = 5 ma 0.4 base saturation voltage -v besat -i c = 10 ma, -i b = 1 ma 0.85 v -i c = 50 ma, -i b = 5 ma 0.95 collector-emitter breakdown voltage -v( br)ceo -i c = 1 ma, i b = 0 40 v collector-base breakdown voltage -v( br)cbo -i c = 10 a, i e = 0 40 v emitter-base breakdown voltage -v( br)ebo -i e = 10 a, i c = 0 5 v input impedance h ie -v ce = 10 v, -i c = 1 ma, 1 10 k ? f = 1 khz voltage feedback ratio h re -v ce = 10 v, -i c = 1 ma, 0.5 10 -4 8 10 -4 f = 1 khz current gain-bandwidth product f t -v ce = 20 v, -i c = 10 ma 250 mhz f = 100 mhz collector-base capacitance c cbo -v cb = 5 v, f = 100 khz 4.5 pf emitter-base capacitance c ebo -v eb = 0.5 v, f = 100 khz 10 pf small signal current gain h fe -v ce = 10 v, -i c = 1 ma 100 400 f = 1 khz output admittance h oe -v ce = 1 v, -i c = 1 ma 1 40 s f = 1 khz
2n3906 vishay semiconductors formerly general semiconductor document number 88114 www.vishay.com 07-may-02 3 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit noise figure f -v ce = 5 v, -i c = 100 a, 4db r g =1 k ? , f = 10...15000 hz delay time (see fig. 1) t d -i b1 = 1 ma, -i c = 10 ma 35 ns rise time (see fig. 1) t r -i b1 = 1 ma, -i c = 10 ma, 35 ns storage time (see fig. 2) t s i b1 =-i b2 = 1 ma, 225 ns -i c = 10 ma fall time (see fig. 2) t f i b1 =-i b2 = 1 ma, 75 ns -i c = 10 ma fig. 2: test circuit for storage and fall time * total shunt capacitance of test jig and connectors fig. 1: test circuit for delay and rise time * total shunt capacitance of test jig and connectors
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