? semiconductor components industries, llc, 2003 december, 2003 ? rev. 2 1 publication order number: NTLMS4501N/d NTLMS4501N power mosfet 30 v, 14.7 a, n?channel, so?8 leadless package features and benefits ? fast switching performance ? low t rr and q rr optimized for synchronous operation ? low r ds (on) to minimize conduction loss ? optimized fom (q gd x r ds(on) ) ? low gate charge to minimize switching losses applications ? server and notebook power supplies ? dc?dc converters maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain?to?source voltage v dss 30 v gate?to?source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 10 a current (note 1) t a = 85 c 7.2 t 10 s t a = 25 c 14.7 power dissipation (note 1) steady state t a = 25 c p d 2.3 w (note 1) t 10 s 5.0 continuous drain current (note 2) steady state t a = 25 c i d 7.0 a current (note 2) t a = 85 c 5.0 power dissipation (note 2) steady state t a = 25 c p d 1.13 w pulsed drain current (note 1) t p = 10 s i dm 30 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) i s 10 a lead temperature for soldering purposes (1/8 in from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max unit junction?to?ambient steady state (note 1) r ja 55 c/w junction?to?ambient t 10 s (note 1) r ja 25 c/w junction?to?ambient steady state (note 2) r ja 110 c/w 1. surface?mounted on fr4 board using 1 sq. in. pad size (cu. area = 1.127 sq. in. [1 oz] including traces). 2. surface?mounted on fr4 board using minimum recommended pad size (cu. area = 0.0821 sq. in.). http://onsemi.com device package shipping 2 ordering information NTLMS4501Nr2 so?8 leadless 2500/tape & reel so?8 leadless case 751ad marking diagram d s g 30 v 11.8 m @ 10 v r ds(on) typ 14.7 a i d max v (br)dss 15 m @ 4.5 v 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. xxxx = specific device code a = assembly location y = year ww = work week xxxx ayww
NTLMS4501N http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 33 v drain?to?source breakdown voltage temperature coefficient v( br)dss /t j 25 mv/ c zero gate voltage drain current i dss v gs = 0 v, t a = 25 c 0.8 a v gs = 0 v , v ds = 24 v t a = 125 c 10 gate?to?source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v =v i =250 a 1.0 1.7 2.0 v negative threshold temperature coefficient v gs(th) /t j v gs = v ds , i d = 250 a ?4.0 mv/ c drain?to?source on resistance r ds(on) v gs = 10 v, i d = 14.7 a 11.8 13.5 m () v gs = 4.5 v, i d = 13 a 15 16.5 forward transconductance g fs v ds = 10 v, i d = 14.7 a 20 s charges and capacitances input capacitance c iss 1010 1100 pf output capacitance c oss v gs = 0 v, f = 1 mhz, v ds = 20 v 325 reverse transfer capacitance c rss gs ,, ds 94 total gate charge q g(tot) 9.25 9.7 nc gate?to?source gate charge q gs v gs = 4.5 v, v ds = 10 v, i d = 14.7 a 3.2 gate?to?drain amillero charge q gd i d = 14 . 7 a 3.6 switching characteristics (note 4) turn?on delay time t d(on) 8.5 9.5 ns rise time t r v gs = 10 v, v ds = 15 v, 37 39 turn?off delay time t d(off) v gs = 10 v , v ds = 15 v , i d = 14.7 a, r g = 2.5 22 25 fall time t f 6.0 8.0 drain?source diode characteristics (note 3) forward diode voltage v sd v 0v i 10 a t a = 25 c 1.0 1.2 v v gs = 0 v, i s = 10 a t a = 125 c 0.8 reverse recovery time t rr 29 35 ns charge time t a v gs = 0 v, di s /dt = 100 a/ s, 15 discharge time t b v gs = 0 v , di s /dt = 100 a/ s , i s = 10 a 18 reverse recovery charge q rr 0.022 nc 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTLMS4501N http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 3 v 125 c 0 35 5 30 6 3 2 v ds , drain?to?source voltage (volts) i d, drain current (amps) 10 5 0 1 figure 1. on?region characteristics 0 40 2 30 20 10 1 0 7 figure 2. transfer characteristics v gs , gate?to?source voltage (volts) figure 3. on?resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain?to?source resistance ( ) i d, drain current (amps) figure 4. on?resistance vs. drain current and gate voltage i d, drain current (amps) ?50 0 ?25 25 1.6 1.2 0.8 0.4 0 50 125 100 figure 5. on?resistance variation with temperature t j , junction temperature ( c) t j = 25 c t j = ?55 c 75 150 i d = 13 a v gs = 4.5 v r ds(on), drain?to?source resistance (normalized) 4 25 c r ds(on), drain?to?source resistance ( ) 2.0 5 0.1 30 25 figure 6. drain?to?source leakage current vs. voltage v ds , drain?to?source voltage (volts) 15 v gs = 0 v i dss , leakage (na) t j = 150 c 2.4 v 2.6 v 2.8 v 10 1000 78 3.4 v v ds 10 v 10 v gs = 3.6 v v gs = 10 v to 3.8 v 910 1.8 1.4 1.0 0.6 0.2 1 100 20 t j = 125 c 25 20 15 3.2 v 3456 15 20 0.02 0.01 0 523 10 0.03 0 t j = 25 c v gs = 4.5 v 30 v gs = 10 v 817 0.01 525 0.02 0.005 0.025 14 0.015 0.005 v gs = 10 v t j = 25 c t j = 100 c t j = ?55 c 0.015 11 20
NTLMS4501N http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) 510 1800 1200 800 400 0 25 gate?to?source or drain?to?source voltage (volts) figure 7. capacitance variation c, capacitance (pf) 05 1 0 figure 8. gate?to?source and drain?to?source voltage vs. total charge q g , total gate charge (nc) v gs, gate?to?source voltage (volts) t j = 25 c c oss c iss c rss i d = 15 a t j = 25 c q g 1 2 v ds, drain?to?source voltage (volts) 11 0 q gd 10 1 10 1 100 r g , gate resistance (ohms) figure 9. resistive switching time variation vs. gate resistance t, time (ns) v dd = 15 v i d = 15 a v gs = 10 v 1000 0 5 t d(off) t d(on) t f t r 15 10 0.9 0 v sd , source?to?drain voltage (volts) figure 10. diode forward voltage vs. current i s , source current (amps) v gs = 0 v t j = 25 c 15 0.5 0.2 0 10 10 1.1 0.6 0.8 5 q gs r ds(on) limit thermal limit package limit 10 s 100 s 1 ms 10 ms dc v gs = 15 v single pulse t c = 25 c i d , drain current (a) v ds , drain?to?source voltage (volts) figure 11. maximum rated forward biased safe operating area 1400 1000 600 200 1600 20 9 100 0.3 0.1 0.4 0.7 1 1 0.1 100 0.1 10 1 10 100 1000 3 4 234 6789 8 7 6 5 4 3 2 1
NTLMS4501N http://onsemi.com 5 package dimensions so?8 leadless case 751ad?01 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. d e b a pin #1 id c 0.15 2 x c 0.15 2 x top view c a a1 (a3) side view c 0.10 c 0.08 seating plane k b k2 b1 j j1 j2 d1 e1 bottom view l 2 x j3 dim min max millimeters a 1.750 1.950 a1 0.000 0.050 a3 0.254 ref b 0.400 0.600 b1 2.930 3.030 d 6.200 bsc d1 3.777 3.977 e 5.200 bsc e1 4.544 4.744 j 0.027 0.227 j1 0.350 0.550 j2 0.154 0.354 j3 0.178 0.378 k 1.246 1.446 k2 0.680 0.880 l 0.500 0.700 2 x
NTLMS4501N http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 NTLMS4501N/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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