characteristic / test conditions drain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, 0.5 i d[cont.] ) zero gate voltage drain current (v ds = v dss , v gs = 0v) zero gate voltage drain current (v ds = 0.8 v dss , v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) 050-7120 rev a 8-2002 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameter drain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuous gate-source voltage transient total power dissipation @ t c = 25c linear derating factor operating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms a na volts min typ max 1200 3.5 4.70 100 500 100 35 APT1204R7KLL 1200 3.5 14 30 40 135 1.08 -55 to 150 300 3.5 10 425 g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switching losses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt's patented metal gate structure. ? lower input capacitance ? increased power dissipation ? lower miller capacitance ? easier to drive ? lower gate charge, qg ? to-220 package g d s to-220 APT1204R7KLL 1200v 3.5a 4.70 ? ? ? ? ? power mos 7 r mosfet
dynamic characteristics APT1204R7KLL 050-7120 rev a 8-2002 symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d[cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d[cont.] @ 25c r g = 1.6 ? min typ max 716 900 132 200 36 60 31 50 45 21 40 714 24 20 30 24 50 unit pf nc ns characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time characteristic / test conditions continuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d[cont.] ) reverse recovery time (i s = -i d[cont.] , dl s /dt = 100a/s) reverse recovery charge (i s = -i d[cont.] , dl s /dt = 100a/s) peak diode recovery dv / dt 5 source-drain diode ratings and characteristics unit amps volts ns c v/ns min typ max 3.5 14 1.3 400 2.5 10 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 69.39mh, r g = 25 ? , peak i l = 3.5a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d [ cont. ] di / dt 700a/s v r v dss t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.90 40 unit c/w characteristic junction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration z jc , thermal impedance (c/w) 0.9 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 0.02 0.05 0.2 d=0.5 0.01 single pulse
050-7120 rev a 8-2002 typical performance curves graph deleted APT1204R7KLL i d = 0.5 i d [cont.] v gs = 10v v ds , drain-to-source voltage (volts) figure 2, high voltage output characteristics figure 3, low voltag e output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 012345678 0 1 2 3456 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 10 8 6 4 2 0 3.5 3 2.5 2 1.5 1 0.5 0 2.5 2.0 1.5 1.0 0.5 0.0 8 7 6 5 4 3 2 1 0 1.40 1.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.2 1.1 1.0 0.9 0.8 0.7 0.6 t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v normalized to v gs = 10v @ 0.5 i d [cont.] 6v 6.5v 7v 5v v gs =15,10 & 8v 5.5v
apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 to-220ac package outline source 10.66 (.420) 9.66 (.380) 5.33 (.210) 4.83 (.190) 14.73 (.580) 12.70 (.500) 1.01 (.040) 3-plcs. 0.38 (.015) 2.79 (.110) 2.29 (.090) 4.82 (.190) 3.56 (.140) 1.39 (.055) 0.51 (.020) 4.08 (.161) dia. 3.54 (.139) dimensions in millimeters and (inches) 16.51 (.650) 14.23 (.560) 6.35 (.250) max. gate drain 6.85 (.270) 5.85 (.230) 1.77 (.070) 3-plcs. 1.15 (.045) 2.92 (.115) 2.04 (.080) 3.42 (.135) 2.54 (.100) 0.50 (.020) 0.41 (.016) 5.33 (.210) 4.83 (.190) drain APT1204R7KLL 050-7120 rev a 8-2002 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 1200 0 10 20 30 40 50 0 5 10 15 20 25 30 35 40 45 0.3 0.5 0.7 0.9 1.1 1.3 1.5 14 10 5 1 0.5 16 12 8 4 0 c rss c iss c oss t j =+150c t j =+25c v ds =250v v ds =100v v ds =400v i d = i d [cont.] t c =+25c t j =+150c single pulse operation here limited by r ds (on) 10ms 1ms 100s t j =+150c t j =+25c 3,000 1,000 500 100 50 10 100 50 10 1
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