maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol limit unit drain-source voltage v dss 60 v drain-gate voltage v dgs 60 v gate-source-voltage (pulsed) v gs 20 v drain current (continuous) i d 250 ma power dissipation at t c = 50? p tot 0.310 (1) w thermal resistance junction to substrate backside r q sb 320 (1) ?/w thermal resistance junction to ambiant air r q ja 450 (1) ?/w junction temperature t j 150 ? storage temperature range t s 55 to +150 ? note: (1) ceramic substrate 0.7mm; 2.5cm 2 area. 2n7002 dmos transistors (n-channel) 5/5/00 dimensions in inches and (millimeters) .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) features ?high input impedance ?high-speed switching ?no minority carrier storage time ?cmos logic compatible input ?no thermal runaway ?no secondary breakdown to-263ab (sot-23) mechanical data case: sot-23 plastic package weight: approx. 0.008g packaging codes/options: e8/10k per 13?reel (8mm tape), 30k/box e9/3k per 7?reel (8mm tape), 30k/box dimensions in inches and (millimeters) mounting pad layout 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) pin configuration 1. gate 2. source 3. drain
electrical characteristics (t j = 25? unless otherwise noted) parameter symbol test condition min typ max unit drain-source breakdown voltage v (br)dss i d = 100 m a, v gs = 0 60 90 v gate threshold voltage v gs(th) v gs = v ds , i d = 1m a 2 2.5 gate-body leakage current i gss v gs = 15v, v ds = 0v 10 na drain cutoff current i dss v ds = 25v, v gs = 0v 0.5 m a drain-source on-state resistance r ds(on) v gs = 10v, i d = 500ma 5 7.5 w forward transconductance g m v ds = 10v, i d = 200ma, 200 ms f = 1 mhz input capacitance c iss v ds = 10 v, v gs = 0, ?0 pf f = 1mhz turn-on time t on v gs = 10v, v ds = 10v ? ns turn-off time t off r d = 100 w 25 ns note: (1)device on fiberglass substrate, see layout inverse diode parameter symbol test condition value unit max. forward current (continuous) i f tamb = 25? 0.3 a forward voltage drop (typ.) v f v gs = 0v, i f = 0.3a 0.85 v t j = 25 ? 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) dimensions in inches and (millimeters) layout for r thja test thickness: fiberglass 0.059 in. (1.5 mm) copper leads 0.012 in. (0.3 mm) 2n7002 dmos transistors (n-channel)
? ? ? ? 2n7002 dmos transistors (n-channel) ratings and characteristic curves (t a = 25? unless otherwise noted)
? ? ? ? ? ? 2n7002 dmos transistors (n-channel) ratings and characteristic curves (t a = 25? unless otherwise noted)
? ? 2n7002 dmos transistors (n-channel) ratings and characteristic curves (t a = 25? unless otherwise noted)
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