2sk2446-l,s n-channel mos-fet f-iii series 100v 0,055w 30a 80w > features > outline drawing - high current - low on-resistance - no secondary breakdown - low driving power - high forward transconductance > applications - motor control - general purpose power amplifier - dc-dc converters > maximum ratings and characteristics > equivalent circuit - absolute maximum ratings (t c =25c), unless otherwise specified item symbol rating unit drain-source-voltage v ds 100 v drain-gate-voltage (r gs =20k w ) v dgr 100 v continous drain current i d 30 a pulsed drain current i d(puls) 120 a gate-source-voltage v gs 20 v max. power dissipation p d 80 w operating and storage temperature range t ch 150 c t stg -55 ~ +150 c - electrical characteristics (t c =25c), unless otherwise specified item symbol test conditions min. typ. max. unit drain-source breakdown-voltage v (br)dss i d =1ma v gs =0v 100 v gate threshhold voltage v gs(th) i d =1ma v ds= v gs 1,0 1,5 2,5 v zero gate voltage drain current i dss v ds =100v t ch =25c 10 500 a v gs =0v t ch =125c 0,2 1,0 ma gate source leakage current i gss v gs =20v v ds =0v 10 100 na drain source on-state resistance r ds(on) i d =15a v gs =4v 0,04 0,07 w i d =15a v gs =10v 0,03 0,055 w forward transconductance g fs i d =15a v ds =25v 15 30 s input capacitance c iss v ds =25v 2500 3700 pf output capacitance c oss v gs =0v 500 750 pf reverse transfer capacitance c rss f=1mhz 250 380 pf turn-on-time t on ( t on =t d(on) +t r ) t d(on) v cc =30v 20 30 ns t r i d =30a 140 210 ns turn-off-time t off (t on =t d(off) +t f ) t d(off) v gs =10v 500 750 ns t f r gs =25 w 260 390 ns diode forward on-voltage v sd i f =2xi dr v gs =0v t ch =25c 0,9 1,5 v reverse recovery time t rr i f =i dr v gs =0v 130 ns reverse recovery charge q rr -di f /d t =100a/s t ch =25c 1,0 c - thermal characteristics symbol test conditions min. typ. max. unit thermal resistance r th(ch-a) channel to air 125 c/w r th(ch-c) channel to case 1,56 c/w
n-channel mos-fet 2sk2446-l,s 100v 0,055w 30a 80w f-iii series > characteristics typical output characteristics drain-source on-state resistance vs. t ch typical transfer characteristics - i d =f(v ds ); 80s pulse test; t c =25c - r ds(on) = f(t ch ); i d =15a; v gs =10v - i d =f(v gs ); 80s pulse test; v ds =25v; t ch =25c i d [a] 1 r ds(on) [ w ] 2 i d [a] 3 v ds [v] ? t ch [c] ? v gs [v] ? typical drain-source on-state-resistance vs. i d typical transconductance gate threshold voltage - r ds(on) =f(i d ); 80s pulse test; t c =25c - g fs =f(i d ); 80s pulse test; v ds =25v; t ch =25c - v gs(th) =f(t ch ); i d =1ma; v ds =v gs r ds(on) [ w ] 4 g fs [s] 5 v gs(th) [v] 6 i d [a] ? i d [a] ? t ch [c] ? typical capacitances typical gate charge characteristic forward characteristics of reverse diode - c=f(v ds ); v gs =0v; f=1mhz - v gs =f(qg); i d =30a - - i f =f(v sd ); 80s pulse test; v gs =0v c [nf] 7 v ds [v] 8 v gs [v] i f [a] 9 v ds [v] ? qg [nc] ? v sd [v] ? power dissipation safe operation area p d =f(tc) i d =f(v ds ): d=0,01, tc=25c - z th(ch-c) [k/w] transient thermal impedance - 10 - 12 z thch-c =f(t) parameter:d=t/t p d [w] i d [a] t ch [c] ? v ds [v] ? t [s] ? this specification is subject to change without notice!
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