bulletin i0170j rev. d 05/06 1 description international rectifier's flipky product family utilizes wafer level chip scale packaging to deliver schottky diodes with the lowest v f to pcb footprint area in industry. the three pad 0.9mm x 1.2mm devices can deliver up to 0.5a and occupy only 1.08mm 2 of board space. the anode and cathode connections are made through solder bump pads on one side of the silicon rather than through protruding leads enabling designers to strategically place the diodes on the pcb. this design not only minimizes board space but also reduces thermal resistance and inductance, which can improve overall circuit efficiency. typical applications include hand-held, portable equipment such as cell phones, mp3 players, pdas, and portable hard disk drives where space savings and performance are crucial. features ? ultra low v f to footprint area ? very low profile (<0.6mm) ? low thermal resistance ? supplied tested and on tape & reel applications ? reverse polarity protection ? current steering ? freewheeling ? flyback ? oring flipky tm flipky tm 0.5 amp 40 volt IR05H40CSPTR major ratings and characteristics i f(av) rectangular waveform 0.5 a v rrm 40 v i fsm @ tp = 5 s sine 190 a v f @ 0.5 apk, t j =125c 0.42 v t j range - 55 to 150 c characteristics ir05h40csp units www.irf.com
IR05H40CSPTR bulletin i0170j rev. d 05/06 2 www.irf.com t j max. junction temperature range (*) - 55 to 150 c t stg max. storage temperature range - 55 to 150 c r thjlb typ. thermal resistance junction 35 c/w dc operation to pcb (**) r thja max. thermal resistance junction 150 c/w to ambient (**) v r max. dc reverse voltage (v) v rwm max. working peak reverse voltage (v) 40 voltage ratings i f(av) max. average forward current 0.5 a 50% duty cycle @ t pcb = 114 c, rectangular wave form i fsm max. peak one cycle non-repetitive 190 a 5 s sine or 3 s rect. pulse surge current @ 25c 10 10ms sine or 6ms rect. pulse e as non- repetitive avalanche energy 5 mj t j = 25 c, i as = 2.0a, l = 5.0mh i ar repetitive avalanche current 0.5 a current decaying linearly to zero in 1 sec frequency limited by t j max. va = 1.5 x vr typical parameters value units conditions absolute maximum ratings following any rated load condition and with rated v rrm applied part number IR05H40CSPTR thermal-mechanical specifications parameters value units conditions < thermal runaway condition for a diode on its own heatsink (*) dptot 1 dtj rth( j-a) (1) pulse width < 300 s, duty cycle < 2% v fm max. forward voltage (1) 0.48 0.52 v @ 0.5a t j = 25 c drop 0.54 0.58 @ 1a * see fig. 1 0.38 0.42 @ 0.5a t j = 125 c 0.46 0.50 @ 1a i rm max. reverse leakage (1) 1 10 at j = 25 c v r = rated v r current 0.2 0.5 v r = 20v * see fig. 2 0.08 0.25 v r = 10v 0.05 0.15 v r = 5v 0.5 2 ma t j = 125 c v r = rated v r 0.2 1 v r = 20v 0.15 0.8 v r = 10v 0.125 0.5 v r = 5v c t max. junction capacitance - 90 pf v r = 5v dc (test signal range 100khz to 1mhz) 25c dv/dt max. volatge rate of charge - 10000 v/ s (rated v r ) electrical specifications parameters typ. max. units conditions (**) mounted on dual sided 0.58 inch square fr4 pcb with 0.2 square inches of 1oz top copper area
IR05H40CSPTR bulletin i0170j rev. d 05/06 3 www.irf.com fig. 2 - typical values of reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 1 - max. forward voltage drop characteristics (per leg) forward voltage drop - v fm (v) instantaneous forward current - i f (a) reverse voltage - v r (v) reverse current - i r ( a) reverse voltage - v r (v) junction capacitance - c t (p f) 10 100 1 000 0 5 10 15 20 25 30 35 40 t = 25?c j 0.1 1 10 0.2 0.4 0.6 0.8 1 1 .2 t = 150?c t = 125?c t = 25?c j j j 0.01 0.1 1 10 100 1000 1 0000 0 5 10 15 20 25 30 35 4 0 125?c 100?c 75?c 50?c 25?c tj = 150?c
IR05H40CSPTR bulletin i0170j rev. d 05/06 4 www.irf.com fig. 6 - max. non-repetitive surge current (per leg) fig. 4 - max. allowable case temperature vs. average forward current (per leg) fig. 8 - unclamped inductive test circuit fig. 5 - forward power loss characteristics (per leg) free- w heel diode 40hfl40s 02 current monitor hig h-speed switch irfp460 l dut rg = 25 o h m vd = 25 volt + (2) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm @ (i f(av) / d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r @ 80% v r applied average forward current - i f(av) (a) allowable case temperature (c) average forward current - i f(av) (a) average power loss (watts) square wave pulse duration - t p (microsec) non-repetitive surge current - i fsm (a) 60 80 1 00 1 20 1 40 1 60 0 0.2 0.4 0.6 0.8 dc square wave (d = 0.50) 80% vr applied see note (2) d = 3/4 d = 1/2 d = 1/3 d = 1/4 d = 1/5 0 0 .1 0 .2 0 .3 0 .4 0 0.2 0.4 0.6 0.8 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 1 10 100 1 000 10 100 1000 10000 at any rated load condition and with rated vrrm applied following surge
IR05H40CSPTR bulletin i0170j rev. d 05/06 5 www.irf.com 0.300 0.460 0.355 0.395 1.244 0.105 0.125 0.520 pin 3 anode 0.450 0.250 0.350 0.700 pin 2 cathode 0.350 pin 1 cathode recommended footprint 0.500 0.700 1.244 0.914 3. dimensions are shown in millimeters 2. controlling dimension: millimeter 1. dimensioning & tolerancing per asme y14.5m-1994. notes: assignments 3 = anode 2 = cathode 1 = cathode 3 0.500 2 1 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 05/06 data and specifications subject to change without notice. this product has been designed for consumer level. qualification standards can be found on ir's web site. flipky tm outline dimension and tape and reel special instruction for pcb assembly: see a pplication n ote an-1079 lot number workweek (y, ww) 01 123 location mark ball 1 part number e 4mm 1. tape and reel outline conforms to eia-481 & eia-541. notes: feed direction location a1 ball 8mm 8mm ? 13"
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