? 2001 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 30n50q 30 a 32n50q 32 a i dm t c = 25 c, 30n50q 120 a pulse width limited by t jm 32n50q 128 a i ar t c = 25 c 32 a e ar t c = 25 c 45 m j e as 1500 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 360 w t j -55 ... + 150 c t jm 150 c t stg -55 ... + 150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g n-channel enhancement mode avalanche rated, low q g , high dv/dt features ixys advanced low q g process low gate charge and capacitances - easier to drive - faster switching international standard packages low r ds (on) unclamped inductive switching (uis) rated molding epoxies meet ul 94 v-0 flammability classification advantages easy to mount space savings high power density symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 250 ua 500 v v gs(th) v ds = v gs , i d = 4 ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 30n50q 0.16 ? note 1 32n50q 0.15 ? 98596d (03/01) to-247 ad (ixfh) g = gate d = drain s = source tab = drain hiperfet tm power mosfets q-class to-268 (d3) ( ixft) (tab) g s v dss i d25 r ds(on) 500 v 30 a 0.16 ? ? ? ? ? 500 v 32 a 0.15 ? ? ? ? ? t rr 250 ns ixfh/ixft 30n50q ixfh/ixft 32n50q
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 ? i d25 , note 1 18 28 s c iss 3950 4925 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 640 800 pf c rss 210 260 pf t d(on) 35 45 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 42 50 ns t d(off) r g = 2 ? (external), 75 95 n s t f 20 25 ns q g(on) 153 190 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 26 32 nc q gd 85 105 nc r thjc 0.35 k/w r thck (to-247) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 32 a i sm repetitive; pulse width limited by t jm 128 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm i f = i s , -di/dt = 100 a/ s, v r = 100 v 0.75 c i rm 7.5 a to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain note 1: pulse test, t 300 s, duty cycle d 2 % ixfh 30n50q ixfh 32n50q ixft 30n50q ixft 32n50q
? 2001 ixys all rights reserved t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 8 16 24 32 40 v gs - volts 23456 i d - amperes 0 10 20 30 40 50 t j - degrees c 25 50 75 100 125 150 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 i d = 16a v ds - volts 048121620 i d - amperes 0 10 20 30 40 50 v ds - volts 0 4 8 121620 i d - amperes 0 10 20 30 40 50 60 70 80 5v t j = 125 o c v gs = 10v t j = 25 o c t j = 125 o c 6v 5v 6v v gs =10v 9v 8v 7v v gs = 9v 8v 7v i d = 32a t j = 25 o c i d - amperes 0 102030405060 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 tj=125 0 c tj=25 0 c v gs = 10v 4v ixf_32n50q ixf_30n50q figure 3. r ds(on) normalized to 15a/25 o c vs. i d figure 5. drain current vs. case temperature figure 6. admittance curves figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 4. r ds(on) normalized to 15a/25 o c vs. t j ixfh 30n50q ixfh 32n50q ixft 30n50q ixft 32n50q
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. pulse width - seconds 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.02 0.04 0.06 0.08 0.20 0.40 0.01 0.10 v ds - volts 0 5 10 15 20 25 capacitance - pf 100 1000 10000 v sd - volts 0.4 0.6 0.8 1.0 1.2 i d - amperes 0 20 40 60 80 100 t j =125 o c t j =25 o c gate charge - nc 0 50 100 150 200 250 v gs - volts 0 2 4 6 8 10 12 14 f = 1mhz crss coss ciss v gs = 0v t j =25 o c vds=300v i d =16a i g =10ma f = 1mhz figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure 10. transient thermal resistance ixfh 30n50q ixfh 32n50q ixft 30n50q ixft 32n50q
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