note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: ft0037b doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sff116n10 ___ ___ ____ screening 2 / __ = not screened tx = tx level txv = txv level s = s level lead option 3 / __ = straight leads db = down bend ub = up bend package 3 / 4 / m = to-254 z = to-254z SFF116N10M sff116n10z 116 amp , 100 volts, 15 m ? avalanche rated n-channel mosfet features: ? rugged poly-si gate ? lowest on-resistance in the industry ? avalanche rated ? hermetically sealed, isolated package ? low total gate charge ? fast switching ? tx, txv, s-level screening available ? improved (r ds ( on ) q g ) figure of merit maximum ratings symbol value units drain - source voltage v dss 100 v gate ? source voltage continuous transient v gs 20 30 v max. continuous drain current (package limited) @ t c = 25oc i d1 55 a max. instantaneous drain current (tj limited) @ t c = 25oc @ t c = 175oc i d2 i d3 116 80 a max. avalanche current @ l= 0.1 mh i ar 60 a single and repetitive avalanche energy @ l= 0.1 mh e as e a r 2500 80 mj total power dissipation @ t c = 25oc p d 150 w operating & storage temperature t op & t stg -55 to +175 oc maximum thermal resistance (junction to case) r jc 1.0 (typ.0.75) oc /w notes: to-25 4 to-254z *pulse test: pulse width = 300sec, duty cycle = 2%. 1 / for ordering information, price, and availability - contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / for package outlines / lead bending options / pinout configurations - contact factory. 4 / maximum current limited by package configuration 5 / unless otherwise specified, all electrical characteristics @25 o c.
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: ft0037b doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF116N10M sff116n10z electrical characteristics 5 / symbol min typ max units drain to source breakdown voltage v gs = 0v, i d = 250 a bv dss 100 110 ?? v drain to source on state resistance v gs = 10v, i d = 50a, tj= 25 o c v gs = 10v, i d = 50a, tj=125 o c v gs = 10v, i d = 50a, tj= 150 o c r ds(on) ?? ?? ?? 10 16 20 15 25 ?? m ? gate threshold voltage v ds = v gs , i d = 1.0ma, tj= 25 o c v ds = v gs , i d = 1.0ma, tj= 125 o c v ds = v gs , i d = 1.0ma, tj= -55 o c v gs(th) 3.0 2.0 ?? 4.5 3.5 5.0 5.0 ?? 6 v gate to source leakage v gs = 20v, tj= 25 o c v gs = 20v, tj= 125 o c i gss ?? ?? 10 30 100 ?? na zero gate voltage drain current v ds = 100v, v gs = 0v, t j = 25 o c v ds = 100v, v gs = 0v, t j = 125 o c v ds = 100v, v gs = 0v, t j = 175 o c i dss ?? ?? ?? 0.01 2.5 25 25 250 ?? a a a forward transconductance v ds = 15v, i d = 35a, t j = 25 o c g fs 10 60 ?? mho total gate charge gate to source charge gate to drain charge v gs = 12v v ds = 35v i d = 50a q g q gs q g d ?? ?? ?? 125 35 65 250 75 120 nc turn on delay time rise time turn off delay time fall time v gs = 11v v ds = 50v i d = 35a r g = 2.35 ? , pw= 3us t d(on) t r t d(off) t f ?? ?? ?? ?? 39 67 80 67 50 80 100 80 nsec diode forward voltage i f = 35a, v gs = 0v v sd ?? 0.82 1.2 v diode reverse recovery time reverse recovery charge i f = 50a, di/dt = 100a/usec t rr q rr ?? ?? 240 0.85 300 ?? nsec c input capacitance output capacitance reverse transfer capacitance v gs = 0v v ds = 25v f = 1 mhz c iss c oss c rss ?? ?? ?? 4800 2050 600 ?? ?? ?? pf available part numbers: consult factory pin assignment (standard) package drain source gate to-254 (m) pin 1 pin 2 pin 3 to-254z (z) pin 1 pin 2 pin 3 to254 (m) pin 1 pin 3 pin 2 to254z (z) pin 3 pin 2 pin 1
|
