SSG5509A n & p-ch enhancement mode power mosfet n-ch: 6.1 a, 30 v, r ds(on) 30 m ? p-ch: -4.8 a, -30 v, r ds(on) 55 m ? elektronische bauelemente 27-jun-2011 rev. a page 1 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. sop-8 a h b m d c j k f l e n g = date code 5509a ss rohs compliant product a suffix of -c specifies halogen & lead-free description the SSG5509A uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. the sop-8 package is uni versally preferred for all commercial-industrial surface mou nt applications and suited for low voltage application s such as dc/dc converters. features lower gate charge rohs compliant marking code package information package mpq leader size sop-8 3k 13 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit n-ch p-ch drain-source voltage v ds 30 -30 v gate-source voltage v gs 12 12 v continuous drain current 3 t a =25 i d 6.1 -4.8 a t a =70 4.9 -3.8 a pulsed drain current 1 i dm 30 -30 a total power dissipation p d 2 w operating junction and storage temperature range t j , t stg -55~150 c linear derating factor 0.016 w / c thermal resistance ratings maximum thermal resistance junction-ambient 3 r ja 62.5 c / w ref. millimeter ref. millimeter min. max. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d 0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ.
SSG5509A n & p-ch enhancement mode power mosfet n-ch: 6.1 a, 30 v, r ds(on) 30 m ? p-ch: -4.8 a, -30 v, r ds(on) 55 m ? elektronische bauelemente 27-jun-2011 rev. a page 2 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. n-channel electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 30 - - v v gs =0, i d =250 a gate threshold voltage v gs(th) 0.5 - 1.2 v v ds =v gs , i d =250 a forward transconductance g fs - 15 - s v ds =5v, i d =5a gate-source leakage current i gss - - 100 na v gs = 12v drain-source leakage current(t j =25 ) i dss - - 1 a v ds =24v, v gs =0 drain-source leakage current(t j =70 ) - - 25 a v ds =24v, v gs =0 static drain-source on-resistance r ds(on) - - 30 m v gs =10v, i d =5.8a - - 35 v gs =4.5v, i d =5a 55 v gs =2.5v, i d =4a total gate charge 2 q g - 9.7 nc i d =5.8a v ds =15v v gs =4.5v gate-source charge q gs - 1.6 - gate-drain (miller) change q gd - 3.1 - turn-on delay time 2 t d(on) - 3.3 - ns v ds =15v v gs =10v r g =3 r l =2.7 rise time t r - 4.8 - turn-off delay time t d(off) - 26.3 - fall time t f - 4.1 - input capacitance c iss - 823 - pf v gs =0 v ds =15v f=1.0 mhz output capacitance c oss - 99 - reverse transfer capacitance c rss - 77 - source -drain diode forward on voltage 2 v sd - - 1.0 v i s =1a, v gs =0 reverse recovery time 2 t rr - 16 - ns i s =5a, v gs =0, dl/dt =100a/ s reverse recovery charge q rr - 8.9 - nc continuous source current (body diode) i s - - 2.5 a v d =v g =0, v s =1.0v notes: 1. pulse width limited by max. junction temperature . 2. pulse width Q 300us, duty cycle Q 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 135 c/w when mounted on min. copper pad.
SSG5509A n & p-ch enhancement mode power mosfet n-ch: 6.1 a, 30 v, r ds(on) 30 m ? p-ch: -4.8 a, -30 v, r ds(on) 55 m ? elektronische bauelemente 27-jun-2011 rev. a page 3 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. p-channel electrical characteristics (t j =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss -30 - - v v gs =0, i d = -250 a gate threshold voltage v gs(th) -0.5 - -1.2 v v ds =v gs , i d = -250 a forward transconductance g fs - 11 - s v ds = -5v, i d = -5a gate-source leakage current i gss - - 100 na v gs = 12v drain-source leakage current(t j =25 ) i dss - - -1 a v ds = -24v, v gs =0 drain-source leakage current(t j =70 ) - - -25 a v ds = -24v, v gs =0 static drain-source on-resistance r ds(on) - - 55 m v gs = -10v, i d = -4.2a - - 70 v gs = -4.5v, i d = -4a - - 120 v gs = -2.5v, i d = -1a total gate charge 2 q g - 9.4 - nc i d = -4 a v ds = -15v v gs = -4.5v gate-source charge q gs - 2 - gate-drain (miller) change q gd - 3 - turn-on delay time 2 t d(on) - 6.3 - ns v ds = -15v v gs = -10v r g =6 r l =3.6 rise time t r - 3.2 - turn-off delay time t d(off) - 38.2 - fall time t f - 12 - input capacitance c iss - 954 - pf v gs =0 v ds = -15v f=1.0 mhz output capacitance c oss - 115 - reverse transfer capacitance c rss - 77 - source -drain diode forward on voltage 2 v sd - - -1.0 v i s = -1a, v gs =0 reverse recovery time 2 t rr - 20.2 - ns i s = -4a, v gs =0, dl/dt=100a/ s reverse recovery charge q rr - 11.2 - nc continuous source current (body diode) i s - - -2.2 a v d =v g =0, v s = -1v notes: 1. pulse width limited by max. junction temperature . 2. pulse width Q 300us, duty cycle Q 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 135 c/w when mounted on min. copper pad.
SSG5509A n & p-ch enhancement mode power mosfet n-ch: 6.1 a, 30 v, r ds(on) 30 m ? p-ch: -4.8 a, -30 v, r ds(on) 55 m ? elektronische bauelemente 27-jun-2011 rev. a page 4 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (n-ch)
SSG5509A n & p-ch enhancement mode power mosfet n-ch: 6.1 a, 30 v, r ds(on) 30 m ? p-ch: -4.8 a, -30 v, r ds(on) 55 m ? elektronische bauelemente 27-jun-2011 rev. a page 5 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (n-ch)
SSG5509A n & p-ch enhancement mode power mosfet n-ch: 6.1 a, 30 v, r ds(on) 30 m ? p-ch: -4.8 a, -30 v, r ds(on) 55 m ? elektronische bauelemente 27-jun-2011 rev. a page 6 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (p-ch)
SSG5509A n & p-ch enhancement mode power mosfet n-ch: 6.1 a, 30 v, r ds(on) 30 m ? p-ch: -4.8 a, -30 v, r ds(on) 55 m ? elektronische bauelemente 27-jun-2011 rev. a page 7 of 7 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve (p-ch)
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