4.8 v npn common emitter output power transistor for gsm class iv phones technical data features ? 4.8 volt pulsed operation (pulse width = 577 m sec, duty cycle = 12.5%) ? +35.0 dbm p out @ 900 mhz, typ. ? 65% collector efficiency @ 900 mhz, typ. ? 9 db power gain @ 900 mhz, typ. ? internal input pre-matching facilitates cascading applications ? output power device for gsm class iv handsets AT-36408 description agilents AT-36408 combines internal input pre-matching with low cost, npn power silicon bipolar junction transistors in a soic-8 surface mount plastic package. this device is designed for use as the output device for gsm class iv handsets. at 4.8 volts, the device features +35 dbm pulsed output power, superior power added efficiency, and excellent gain, making the AT-36408 an excellent choice for battery powered systems. the AT-36408 is fabricated with agilents 10 ghz f t self-aligned- transistor (sat) process. the die are nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. soic-8 surface mount plastic package outline p8 pin configuration emitter emitter emitter emitter base base 18 27 collector collector 3 6 45
2 AT-36408 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.4 v cbo collector-base voltage v 16.0 v ceo collector-emitter voltage v 9.5 i c collector current [2] a 1.7 p t peak power dissipation [2, 3] w 8.6 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance [4] : q jc = 60 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. pulsed operation, pulse width = 577 m sec, duty cycle = 12.5%. 3. derate at 133.3 mw/ c for t c >85 c. t c is defined to be the temperature of the collector pins 3 and 6, where the lead contacts the circuit board. 4. using the liquid crystal technique, v ce = 4.5 v, i c = 100 ma, t j =150 c, 1- 2 m m hot-spot resolution. electrical specifications, t c = 25 c symbol parameters and test conditions units min. typ. max. freq. = 900 mhz, v ce = 4.8 v, i cq = 50 ma, pulsed operation, pulse width = 577 m sec, duty cycle = 12.5%, test circuit a,unless otherwise specified p out output power [1] p in = +26 dbm dbm +34.0 +35.0 h c collector efficiency [1] p in = +26 dbm % 55 65 h2 2nd harmonic [1] f 0 = 900 mhz dbc -50 h3 3rd harmonic [1] f 0 = 900 mhz dbc -40 mismatch tolerance, no damage [1] p out = +35 dbm 7:1 any phase, 2 sec duration bv ebo emitter-base breakdown voltage i e = 0.8 ma, open collector v 1.4 bv cbo collector-base breakdown voltage i c = 4.0 ma, open emitter v 16.0 bv ceo collector-emitter breakdown voltage i c = 20.0 ma, open base v 9.5 h fe forward current transfer ratio v ce = 3 v, i c = 180 ma 80 150 330 i ceo collector leakage current v ceo = 5 v m a50 note: 1. with external matching on input and output, tested in a 50 ohm environment. refer to test circuit a (gsm).
3 AT-36408 typical performance, t c = 25 c frequency = 900 mhz, v ce = 4.8 v, i cq = 50 ma, pulsed operation, pulse width = 577 m sec, duty cycle = 12.5%, test circuit a (gsm), unless otherwise specified. 14 18 38 34 22 26 30 5 20 35 95 80 50 65 618 16 10 814 12 22 20 28 26 24 output power (dbm) collector efficiency (%) input power (dbm) figure 1. output power and collector efficiency vs. input power. 13 23 28 18 33 38 output power (dbm) input power (dbm) figure 2. output power vs. input power over bias voltage. 0 20 10 30 40 80 70 50 60 collector efficiency (%) input power (dbm) figure 3. collector efficiency vs. input power over bias voltage. figure 5. output power and collector efficiency vs. frequency. note: tuned at 900 mhz, then swept over frequency. figure 6. input and output return loss vs. frequency. 15 21 17 19 23 28 27 25 612 810 14 20 16 18 22 26 24 p out g source = 0.88 e -171 g load = 0.85 e +172 g source = 0.88 e -171 g load = 0.85 e +172 27 29 30 31 28 32 33 36 34 35 output power (dbm) input power (dbm) figure 4. output power vs. input power over temperature. t c = +85 c t c = +25 c t c = ?0 c 3.6 v 4.8 v 6.0 v g source = 0.88 e -171 g load = 0.85 e +172 3.6 v 4.8 v 6.0 v g source = 0.88 e -171 g load = 0.85 e +172 g source = 0.88 e -171 g load = 0.85 e +172 34.0 34.2 34.4 34.6 36.0 34.8 35.0 35.2 35.4 35.6 35.8 55 59 75 63 67 71 output power (dbm) frequency (mhz) 880 g source = 0.88 e -171 g load = 0.85 e +172 -25 -20 -15 -10 0 -5 return loss (db) collector efficiency (%) frequency (mhz) 800 850 950 1000 900 890 910 920 900 output r.l. input r.l. h c 618 16 10 814 12 22 20 28 26 24 p out p in = +26 dbm h c
4 spice model parameters die model packaged model c cpad cpad die area = 1.2 cpad = 0.3 pf e1 b e2 cpad label bf ikf ise ne vaf nf tf xtf vtf itf ptf xtb br ikr isc nc var nr value 280 299.9 9.9e-11 2.399 33.16 0.9935 1.6e-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7e-13 1.587 1.511 0.9886 label tr eg is xti cjc vjc mjc xcjc fc cje vje mje rb irb rbm re rc value 1e-9 1.11 3.598e-15 3 0.8e-12 0.4831 0.2508 0.001 0.999 6.16e-12 1.186 0.5965 0.752 0 0.01 1.27 0.107 12 13 14 20 19 17 18 15 16 046 210 8 ccb (pf) vcb (v) figure 7. collector-base capacitance vs. collector-base voltage (dc test). AT-36408 typical large signal impedances v ce = 4.8 v, i cq = 50 ma, pulsed operation, p out = +35.0 dbm freq. g source g load mhz mag. ang. mag. ang. 880 0.882 -170.0 0.847 172.7 890 0.885 -170.5 0.849 172.2 900 0.887 -171.1 0.851 171.6 910 0.890 -171.4 0.853 171.1 915 0.891 -169.0 0.854 168.4 920 0.893 -168.4 0.855 168.2 label rlead llead rwire lwire cpkg1 cpkg2 le1 value 0.63 1.45 nh 1.3 0.52 nh 0.4 pf 1.2 pf 0.3 nh label le2 cbase rwbase lwbase rwbb lwbb value 0.00064 nh 46.0 pf 0.2 1.19 nh 0.1 0.1 nh lwbase rwbase lwbase rwbase lwbase rwbase lwbase rwbase lwbb rwbb lwbb rwbb lwbb rwbb cpkg1 cpkg1 cpkg2 cbase b e1 rlead rlead llead llead l=0 l=0 r= 1 cbase die die le1 le2 lwire rwire lwire rwire cpkg1 cpkg2 c rlead llead e2 rlead llead cpkg2 le1 le2 die le1 le2 die le1 le2 r=1
5 AT-36408 typical scattering parameters, common emitter, z o = 50 w v ce = 3.6 v, i c = 200 ma, t c = 25 c freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.05 0.96 -175 22.3 13.08 93 -38.4 0.012 11 0.74 -169 0.10 0.96 -178 16.4 6.61 88 -37.7 0.013 13 0.74 -174 0.25 0.96 177 8.8 2.76 80 -36.5 0.015 24 0.75 -177 0.50 0.94 173 4.2 1.63 66 -34.4 0.019 33 0.73 -177 0.75 0.90 169 3.4 1.49 46 -32.0 0.025 27 0.71 -172 0.90 0.84 168 4.2 1.63 24 -32.0 0.025 10 0.72 -165 1.00 0.79 170 4.6 1.70 0 -34.0 0.020 -14 0.81 -160 1.25 0.92 175 -1.2 0.87 -68 -37.1 0.014 126 1.01 -172 1.50 0.97 169 -9.6 0.33 -98 -30.2 0.031 97 0.96 -177 v ce = 4.8 v, i c = 200 ma, t c = 25 c 0.05 0.96 -174 22.6 13.42 93 -37.7 0.013 11 0.74 -169 0.10 0.96 -178 16.6 6.79 88 -37.7 0.013 13 0.73 -174 0.25 0.96 178 9.0 2.83 80 -36.5 0.015 23 0.74 -177 0.50 0.94 173 4.4 1.66 66 -34.4 0.019 32 0.72 -176 0.75 0.90 169 3.6 1.51 46 -32.4 0.024 26 0.70 -172 0.90 0.84 168 4.3 1.64 24 -32.0 0.025 9 0.72 -164 1.00 0.80 170 4.6 1.71 0 -34.0 0.020 -14 0.81 -160 1.25 0.92 175 -1.0 0.89 -67 -37.1 0.014 126 1.01 -171 1.50 0.97 169 -9.4 0.34 -97 -30.2 0.031 97 0.96 -177 v ce = 6.0 v, i c = 200 ma, t c = 25 c 0.05 0.96 -174 22.7 13.60 93 -37.7 0.013 12 0.73 -169 0.10 0.96 -178 16.7 6.88 88 -37.1 0.014 14 0.72 -174 0.25 0.96 178 9.2 2.87 79 -35.9 0.016 23 0.73 -177 0.50 0.94 173 4.5 1.68 65 -34.0 0.020 30 0.71 -176 0.75 0.90 169 3.7 1.52 45 -32.0 0.025 24 0.69 -171 0.90 0.85 168 4.3 1.64 23 -32.0 0.025 8 0.72 -164 1.00 0.80 170 4.6 1.70 0 -34.0 0.020 -14 0.81 -159 1.25 0.92 175 -1.0 0.90 -67 -37.7 0.013 125 1.01 -171 1.50 0.97 169 -9.2 0.35 -97 -30.2 0.031 96 0.95 -177 typical performance -10 -5 0 35 5 10 15 20 25 30 0.05 0.50 0.10 0.25 0.75 1.50 gain (db) frequency (ghz) figure 8. insertion power gain, maximum available gain, and maximum stable gain vs. frequency. v ce = 3.6 v, i c = 200 ma. 1.00 0.90 1.25 -10 -5 0 35 5 10 15 20 25 30 0.05 0.50 0.10 0.25 0.75 1.50 gain (db) frequency (ghz) figure 9. insertion power gain, maximum available gain, and maximum stable gain vs. frequency. v ce = 4.8 v, i c = 200 ma. 1.00 0.90 1.25 -10 -5 0 35 5 10 15 20 25 30 0.05 0.50 0.10 0.25 0.75 1.50 gain (db) frequency (ghz) figure 10. insertion power gain, maximum available gain, and maximum stable gain vs. frequency. v ce = 6.0 v, i c = 200 ma. 1.00 0.90 1.25 msg mag msg |s 21 | 2 msg mag msg |s 21 | 2 msg mag msg |s 21 | 2
6 test circuit a: test circuit board layout @ 900 mhz (gsm) v bb v cc v cc c8 c9 c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 r1 r2 r3 r4 r5 t1 l1 l2 39.0 pf 39.0 pf 100.0 nf 12.5 pf 11.5 pf 100.0 nf 39.0 pf 1.5 f 10.0 f 39.0 pf 2.2 619.0 2.2 10.0 10.0 mbt 2222a 18.0 h 18.0 h 9/96 output input b?fg0140 pa2 demo 76.2 (3.0) 38.1 (1.5) v bb pulse test v ce = 4.8 v i cq = 50 ma freq. = 900 mhz test circuit: fr-4 microstrip, glass epoxy board dielectric constant = 4.5 thickness = 0.79 (.031) note: dimensions are shown in millimeters (inches). r5 r4 r3 r1 t1 r2 c6 c7 c10 c5 c4 c2 c1 c3 l2 l1 test circuit a: test circuit schematic diagram @ 900 mhz (gsm) 619 v bb v cc 2.2 rf in 39 pf 2.2 100 nf 10 80 80 50 50 l /4 @ 900 mhz l /4 @ 900 mhz 18 h b ce dc transistor 39 pf 39 pf 12.5 pf = 1.52 (.060) 39 pf rf out 11.5 pf = 4.88 (.192) 10 18 h 100 nf 1.5 f 10 f pulse test v ce = 4.8 v i cq = 50 ma freq. = 900 mhz
7 part number ordering information part number no. of devices container AT-36408-tr1 1000 7" reel AT-36408-blk 25 carrier tape package dimensions soic-8 surface mount plastic package 5.84/6.20 (.230/.244) 3.80/4.00 (.1497/.1574) pin 1 1.27 (.050) 6x 4.72/5.00 (.186/.197) 0.10/0.25 (.004/.0098) 0.33/0.51 (.013/.020) 8x 1.35/1.75 (.0532/.0688) 0.19/0.25 (.0075/.0098) 0.41/1.27 (.016/.050) 0 /8 0.38 0.10 (.015 .004) x 45 0.10 (.004) note: 1. dimensions are shown in millimeters (inches).
tape dimensions and product orientation for package soic-8 user feed direction cover tape carrier tape reel t c w f e embossment p 2 10 pitches cumulative tolerance on tape 0.2 mm ( 0.008) user feed direction p 0 d 0 cover tape t p 1 d 1 k description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a b k p 1 d 1 6.45 0.10 5.13 0.10 2.11 0.10 8.00 0.10 1.50 min. 0.254 0.004 0.202 0.004 0.083 0.004 0.315 0.004 0.059 min. cavity diameter pitch position d 0 p 0 e 1.50 + 0.10/-0 4.00 0.10 1.75 0.10 0.059 + 0.004/-0 0.157 0.004 0.069 0.004 perforation width thickness w t 8.00 0.30 0.255 0.013 0.315 0.012 0.0100 0.0005 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 5.51 0.05 2.00 0.05 0.217 0.002 0.079 0.002 distance between centerline width tape thickness c t 9.19 0.10 0.051 0.010 0.362 0.004 0.0020 0.0004 cover tape b center lines of cavity a www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-5960e (11/99)
|
