document number: 83397 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.0, 22-dec-10 1 high speed infrared emitting diodes, 850 nm, surface emitter technology VSMY1850 vishay semiconductors description VSMY1850 is an infrared, 850 nm emitting diode based on gaalas surface emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted 0805 plastic package for surface mounting (smd). features ? package type: surface mount ? package form: 0805 ? dimensions (l x w x h in mm): 2 x 1.25 x 0.85 ? peak wavelength: p = 850 nm ? high reliability ? high radiant power ? high radiant intensity ? high speed ? angle of half sensitivity: ? = 60 ? suitable for high pulse current operation ? 0805 standard surface-mountable package ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? irda compatible data transmission ? miniature light barrier ? photointerrupters ? optical switch ? emitter source for proximity sensors ? ir touch panels ?ir flash ? ir illumination ?3d tv note ? test conditions see table basic characteristics note ? moq: minimum order quantity 22119 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) VSMY1850 10 60 850 10 ordering information ordering code packaging remarks package form VSMY1850 tape and reel moq: 3000 pcs, 3000 pcs/reel 0805 ** please see document vishay material category policy: www.vishay.com/doc?99902 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 83397 2 rev. 1.0, 22-dec-10 VSMY1850 vishay semiconductors high speed infrared emitting diodes, 850 nm, surface em itter technology fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward current limit vs. ambient temperature absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.1, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 1a power dissipation p v 190 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. figure 7, j-std-020 t sd 260 c thermal resistance junction/ambient j- std-051, leads 7 mm, soldered on pcb r thja 270 k/w 22108 t amb - ambient temperature (c) p v - power dissipation (mw) 0 40 80 120 160 200 020406080100 r thja = 270 k/w 22109 t amb - ambient temperature (c) i f - forward current (ma) 0 20 40 60 80 100 120 020406080100 r thja = 270 k/w basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit forward voltage i f = 100 ma, t p = 20 ms v f 1.65 1.9 v i f = 1 a, t p = 100 s v f 2.9 v temperature coefficient of v f i f = 1 ma tk vf - 1.4 mv/k i f = 10 ma tk vf - 1.18 mv/k reverse current i r not designed for reverse operation a junction capacitance v r = 0 v, f = 1 mhz, e = 0 mw/cm 2 c j 125 pf radiant intensity i f = 100 ma, t p = 20 ms i e 51015mw/sr i f = 1 a, t p = 100 s i e 85 mw/sr radiant power i f = 100 ma, t p = 20 ms e50mw temperature coefficient of radiant power i f = 100 ma tk e - 0.35 %/k angle of half intensity ? 60 deg peak wavelength i f = 100 ma p 840 850 870 nm spectral bandwidth i f = 30 ma ? 30 nm temperature coefficient of p i f = 30 ma tk p 0.25 nm rise time i f = 100 ma, 20 % to 80 % t r 10 ns fall time i f = 100 ma, 20 % to 80 % t f 10 ns virtual source diameter d 0.5 mm www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 83397 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.0, 22-dec-10 3 VSMY1850 high speed infrared emitting diodes, 850 nm, surface emitter technology vishay semiconductors basic characteristics (t amb = 25 c, unless otherwise specified) fig. 3 - forward current vs. forward voltage fig. 4 - radiant intensity vs. forward current fig. 5 - relative radi ant power vs. wavelength fig. 6 - relative radiant in tensity vs. angular displacement v f - forward voltage (v) 22097 i f - forward current (a) 0.001 0.01 0.1 1 10 0 0.5 1 1.5 2 2.5 3 3.5 t p = 100 s 22110 i f - forward current (a) i e - radiant intensity (mw/sr) 0.1 1 10 100 1000 0.001 0.01 0.1 1 t p = 100 s - wavelength (nm) 21776-1 e, rel - relative radiant power 0 0.25 0.5 0.75 1 650 750 850 950 i f = 30 ma 0.4 0.2 0 i e, rel - relative radiant intensity 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 83397 4 rev. 1.0, 22-dec-10 VSMY1850 vishay semiconductors high speed infrared emitting diodes, 850 nm, surface em itter technology reflow solder profile fig. 7 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in mois ture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life time between soldering and removing from mbb must not exceed the time indi cated in j-std-020: moisture sensitivity: level 3 floor life: 168 h conditions: t amb < 30 c, rh < 60 % drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c drawing-no.: 6.541-5083.01-4 s pecication s according to din technical drawing s 1.25 2 0.35 0.85 not indicated tolerance s 0.1 1 1 1.2 0.6 recommended s older pad footprint 0.6 0.6 0.82 0.625 i ss ue: 1; 29.03.10 cathode anode top view s ide view bottom view 1 22111 www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 83397 for tec hnical questions, contact: emittertechsuppo rt@vishay.com www.vishay.com rev. 1.0, 22-dec-10 5 VSMY1850 high speed infrared emitting diodes, 850 nm, surface emitter technology vishay semiconductors blister tape dimensions in millimeters drawing-no.: 9.700-5352.01-4 s pecication s according to din technical drawing s reel off direction 2 0.05 4 ? 1.55 0.05 0.2 0.05 0.94 4 1.75 3.5 0.05 8 2.24 not indicated tolerance s 0.1 1.45 ? 1.1 + 0.1 anode cathode i ss ue: 1; 13.04.10 22112 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 83397 6 rev. 1.0, 22-dec-10 VSMY1850 vishay semiconductors high speed infrared emitting diodes, 850 nm, surface em itter technology reel dimensions in millimeters of the wheel i s s upplier s pecic. form of the leave open i ss ue: 2; 26.04.10 drawing-no.: 9.800-5096.01-4 s pecication s according to din technical drawing s ? 177.8 max. ? 55 min. 8.4 +2.5 8.4 +0.15 14.4 max. ? 13 + 0.5 - 0.2 1.5 min. ? 20.2 min. z z 2:1 20875 www.datasheet.co.kr datasheet pdf - http://www..net/
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