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| geometry process details process cpd18 ultra fast rectifier 8 amp glass passivated rectifier chip process glass passivated mesa die size 100 x 100 mils die thickness 14 mils anode bonding pad area 78 x 78 mils top side metalization ni/au - 5,000?/2,000? back side metalization ni/au - 5,000?/2,000? backside cathode principal device types 1n5807 thru 1n5811 ues1301 thru ues1306 ues1401 thru ues1403 cudd8-02 series gross die per 4 inch wafer 1,170 www.centralsemi.com r4 (22-march 2010)
process cpd18 typical electrical characteristics www.centralsemi.com r4 (22-march 2010) |
Price & Availability of CPD1810
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