for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 28 linear & power amplifiers - smt general description features functional diagram the HMC407MS8G & HMC407MS8Ge are high efficiency gaas ingap heterojunction bipolar transistor (hbt) mmic power ampli ers which operate between 5 and 7 ghz. the ampli er requires no external matching to achieve operation and is thus truly 50 ohm matched at input and output. the ampli er is packaged in a low cost, surface mount 8 leaded package with an exposed base for im- proved rf and thermal performance. the ampli er provides 15 db of gain, +29 dbm of saturated power at 28% pae from a +5v supply voltage. power down capability is available to conserve current consum- ption when the ampli er is not in use. gain: 15 db saturated power: +29 dbm 28% pae supply voltage: +5v power down capability no external matching required electrical speci cations, t a = +25 c, vs = 5v, vpd = 5v typical applications this ampli er is ideal for use as a power ampli er for 5 - 7 ghz applications: ? unii ? hiperlan parameter min. typ. max. min. typ. max. units frequency range 5 - 7 5.6 - 6.0 ghz gain 10 15 18 12 15 18 db gain variation over temperature 0.025 0.035 0.025 0.035 db/ c input return loss 12 12 db output return loss 15 15 db output power for 1 db compression (p1db) 21 25 22 25 dbm saturated output power (psat) 29 29 dbm output third order intercept (ip3) 32 37 36 40 dbm noise figure 5.5 5.5 db supply current (icq) vpd = 0v/5v 0.002 / 230 0.002 / 230 ma control current (ipd) vpd = 5v 7 7 ma switching speed ton, toff 30 30 ns HMC407MS8G / 407ms8ge gaas ingap hbt mmic power amplifier, 5 - 7 ghz v03.1006
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 29 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 2345678910 s21 s11 s22 response (db) frequency (ghz) -25 -20 -15 -10 -5 0 4 4.5 5 5.5 6 6.5 7 7.5 8 +25 c +85 c -40 c return loss (db) frequency (ghz) -20 -15 -10 -5 0 4 4.5 5 5.5 6 6.5 7 7.5 8 +25 c +85 c -40 c return loss (db) frequency (ghz) 14 18 22 26 30 34 4 4.5 5 5.5 6 6.5 7 7.5 8 +25 c +85 c -40 c psat (dbm) frequency (ghz) 14 18 22 26 30 34 4 4.5 5 5.5 6 6.5 7 7.5 8 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 0 4 8 12 16 20 4 4.5 5 5.5 6 6.5 7 7.5 8 +25 c +85 c -40 c gain (db) frequency (ghz) HMC407MS8G / 407ms8ge gaas ingap hbt mmic power amplifier, 5 - 7 ghz v03.1006
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 30 linear & power amplifiers - smt power compression @ 5.8 ghz output ip3 vs. temperature noise figure vs. temperature gain & power vs. supply voltage reverse isolation vs. temperature power down isolation 8 10 12 14 16 18 20 22 24 26 28 30 4.75 5 5.25 gain (db) p1db, psat (dbm) vcc supply voltage ( vdc ) 0 2 4 6 8 10 5 5.5 6 6.5 7 +25c +85c -40c noise figure (db) frequency (ghz) -40 -30 -20 -10 0 45678 isolation (db) frequency (ghz) -50 -40 -30 -20 -10 0 4 4.5 5 5.5 6 6.5 7 7.5 8 +25 c +85 c -40 c isolation (db) frequency (ghz) 0 5 10 15 20 25 30 048121620 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 14 19 24 29 34 39 44 4 4.5 5 5.5 6 6.5 7 7.5 8 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) HMC407MS8G / 407ms8ge gaas ingap hbt mmic power amplifier, 5 - 7 ghz v03.1006
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 31 outline drawing absolute maximum ratings gain, power & quiescent supply current vs. vpd @ 5.8 ghz collector bias voltage (vcc1, vcc2) +5.5 vdc control voltage (vpd) +5.5 vdc rf input power (rfin)(vs = vpd = +5vdc) +20 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 31 mw/c above 85 c) 2 w thermal resistance (junction to ground paddle) 32 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c 5 10 15 20 25 30 0 50 100 150 200 250 2.5 3 3.5 4 4.5 5 p1db psat gain icq gain (db), p1db (dbm), psat (dbm) i cq ( m a) vpd (vdc) notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. dimension does not include moldflash of 0.15mm per side. 4. dimension does not include moldflash of 0.25mm per side. 5. all ground leads and ground paddle must be soldered to pcb rf ground. part number package body material lead finish msl rating package marking [3] HMC407MS8G low stress injection molded plastic sn/pb solder msl1 [1] h407 xxxx HMC407MS8Ge rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] h407 xxxx [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c [3] 4-digit lot number xxxx package information HMC407MS8G / 407ms8ge gaas ingap hbt mmic power amplifier, 5 - 7 ghz v03.1006 electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 32 linear & power amplifiers - smt pin number function description interface schematic 1vcc1 power supply voltage for the rst ampli er stage. an external bypass capacitor of 330 pf is required as shown in the application schematic. 2vpd power control pin. for maximum power, this pin should be connected to 5v. a higher voltage is not recommended. for lower die current, this voltage can be reduced. 3, 6, 7 gnd ground: backside of package has exposed metal ground slug that must be connected to ground thru a short path. vias under the device are required. 4rfin this pin is ac coupled and matched to 50 ohms. 5rfout this pin is ac coupled and matched to 50 ohms. 8vcc2 power supply voltage for the output ampli er stage. an external bypass capacitor of 330 pf is required. this capacitor should be placed no more than 20 mils form package lead. pin descriptions HMC407MS8G / 407ms8ge gaas ingap hbt mmic power amplifier, 5 - 7 ghz v03.1006 application circuit note 1: vcc1 and vcc2 may be connected to a common vcc. note 2: c2 should be located < 0.020? from pin 8 (vcc2).
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 33 evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to con- nect the top and bottom ground planes. the evalua- tion board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 104987 [1] item description j1 - j2 pcb mount sma rf connector j3 2 mm dc header c1 - c3 330 pf capacitor, 0603 pkg. c4 2.2 f capacitor, tantalum u1 HMC407MS8G / HMC407MS8Ge ampli er pcb [2] 104628 eval board [1] reference this number when ordering complete evaluation pcb [2] circuit board material: roger 4350 HMC407MS8G / 407ms8ge gaas ingap hbt mmic power amplifier, 5 - 7 ghz v03.1006
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