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savantic semiconductor product specification silicon pnp power transistors 2SB1481 d escription with to-220f package complement to type 2sd2241 high dc current gain. low saturation voltage. darlington applications for power amplifier applications pinning absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current 4 a i cm collector current-peak 6 a t c =25 25 p c collector dissipation t a =25 2 w t j junction temperature 150 t stg storage temperature -55~150 pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1481 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -100 v v cesat collector-emitter saturation voltage i c =-3a ; i b =-6ma -1.5 v v besat base-emitter saturation voltage i c =-3a ; i b =-6ma -2.0 v i cbo collector cut-off current v cb =-100v;i e =0 -2 a i ebo emitter cut-off current v eb =-5v;i c =0 -2.5 ma h fe-1 dc current gain i c =-1.5a ; v ce =-2v 2000 h fe-2 dc current gain i c =-3a ; v ce =-2v 1000 v eco diode forward voltage i c =1a ; i b =0 2.0 v t on turn-on time 0.15 s t stg storage time 0.80 s t f fall time i b1 =-i b2 =-6ma v cc @ -30v; r l =10 a 0.40 s
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1481 package outline fig.2 outline dimensions

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