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| d a t a sh eet objective speci?cation 2003 jul 04 integrated circuits uaa3559uh bluetooth rf transceiver ( datasheet : )
2003 jul 04 2 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh features low cost solution for a bluetooth tm(1) radio fully integrated receiver with high sensitivity integrated low phase noise vco dedicated bluetooth phase-locked loop (pll) synthesizer transmitter preamplifier with programmable output power of up to 9 dbm 3-line serial interface bus low current consumption from 3.0 v supply. applications 2402 to 2480 mhz bluetooth radio transmission and reception in the industrial scientific and medical (ism) band conforming to the bluetooth specification version 1.1. general description the uaa3559hn bicmos device is a low-power, highly integrated circuit. it features a fully integrated receiver for demodulating the output signal from an external antenna filter, an integrated vco, a synthesizer to implement bluetooth channel frequencies, and a transmitter preamplifier. the output power of the transmitter preamplifier can be programmed in eight steps from - 7.5 dbm to +9 dbm (typical) and drives either an antenna via an external switch diode or an external power amplifier. the synthesizer comprises a reference divider, main divider with prescaler, and a phase comparator. the division ratios of both dividers are programmed by control signals on a 3-wire bus. the main divider accepts a frequency range of 2402 to 2481 mhz from the internal vco. the reference divider accepts either a 12 or 13 mhz signal from an external crystal oscillator. the outputs of both dividers are compared by a phase comparator. a charge-pump in the comparator produces a current pulse output whenever a phase error occurs. the current pulse output signal controls and phase locks the vco frequency. the charge-pump current (phase comparator gain) is set to 4 ma. after the synthesizer is programmed, it is activated about 200 m s before the required channel time slot to allow time for the vco to lock to the channel frequency. the synthesizer is then deactivated just before the desired slot to allow open loop modulation of the vco in transmit mode. the synthesizer is also deactivated just before the desired slot in receive mode. this is required to reduce power consumption and allows adjustment of the vco by an internal carrier follower circuit to maintain an accurate if. the ic is designed to operate from 3.0 v nominal supplies. separate power pads are provided for different parts of the circuit. the ground pads should be connected together externally to prevent large, potentially harmful, currents flowing through the ic. all supply pads must be at the same potential. (1) the bluetooth trademarks are owned by bluetooth sig, inc., u.s.a. and licensed to koninklijke philips electronics n.v. ordering information type number package name description version uaa3559uh - bare die; on foil; die dimensions 2.3 2.1 mm - 2003 jul 04 3 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh quick reference data v cc = 3.0 v; t amb =25 c; characteristics for which only a typical value is given are indicative unless otherwise speci?ed. block diagram symbol parameter conditions min. typ. max. unit v cc supply voltage 2.7 3.0 3.4 v i cc(rx)(guard) receiver supply current during rx guard space vco = on, pll = closed - 20 - ma i cc(rx) receiver supply current vco = on; pll = open; receiver = on - 40 48 ma i cc(tx)(guard) transmitter supply current during tx guard space vco = on; pll = closed - 17 - ma i cc(tx) transmitter supply current vco = on; tx preampli?er = on; bits [12:10] = 100 - 33 40 ma i cc(pd) supply current in power-down mode - 530 m a f lo synthesized local oscillator (lo) frequency 2402 - 2480 mhz f i(xtal) crystal reference input frequency reference divider ratio 12 - 12 - mhz 13 - 13 - mhz f ph(comp) phase comparator frequency - 1 - mhz t amb ambient temperature - 30 + 25 + 85 c handbook, full pagewidth lna rfa rfb txa txb r_on t_on amp s_clk v cc(rx) s_data refclk cp r_data stctr data m vreg reggnd mdb383 vtune vmod driftcomp v cc(pll) v cc(reg) s_en 9 13 v cc(tx) 22 v dd 3 v ss 5 rssi 1 uaa3559uh 15 14 txgnd 19 rxgnd 16 20 21 17 18 86 2 25 pllgnd 24 cpgnd 23 31 33 30 34 4 7 11 28 27 26 vcognd 29 divider by 2 synthesizer control logic regulator demodulator data m test1 test2 12 10 vco regulator dc offset extractor afc fig.1 block diagram. 2003 jul 04 4 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh pinning symbol pad description rssi 1 received signal strength intensity voltage output refclk 2 reference frequency input v dd 3 logic supply voltage r_data 4 digital received data output v ss 5 logic ground s_data 6 3-wire bus data signal input stctr 7 receiver dc extractor and tx preampli?er timing control input s_en 8 3-wire bus enable signal input s_clk 9 3-wire bus clock signal input test1 10 test pad 1; do not connect datam 11 receive data analog decision voltage output test2 12 test pad 2; do not connect v cc(rx) 13 receiver supply voltage rfb 14 received signal input b rfa 15 received signal input a rxgnd 16 receiver ground r_on 17 receiver pin diode control digital output t_on 18 transmitter pin diode control digital output txgnd 19 transmitter ground txa 20 transmitted signal output a txb 21 transmitted signal output b v cc(tx) 22 transmitter supply voltage cpgnd 23 charge-pump ground pllgnd 24 vco ground v cc(pll) 25 pll supply voltage v cc(reg) 26 regulator supply voltage vreg 27 regulator output voltage reggnd 28 regulator ground vcognd 29 synthesizer ground vtune 30 vco tuning input cp 31 charge-pump output n.c. 32 not connected driftcomp 33 vco drift compensation vmod 34 modulation input gnd die pad ground 2003 jul 04 5 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh functional description transmit chain vco; buffer and divider the vco has a fully integrated tank circuit with on-chip inductors, and an on-chip regulator which minimizes any frequency disturbances caused by v cc variations. the vco regulator requires a decoupling capacitor to be connected to pad vreg. the vco operates at twice the bluetooth frequency. the vco signal is buffered and fed into a divide-by-two circuit to produce the required local oscillator (lo) frequencies for either transmit (tx) mode or receive (rx) mode. the large difference between the transmitter and vco frequencies reduces transmitter to oscillator coupling problems. the output of the divide-by-two circuit drives the main divider prescaler in the synthesizer and also drives the tx preamplifier in tx mode, or the rx lo buffer in rx mode. the high isolation between the vco buffer and the main divider ensures that only very small frequency changes occur when the tx preamplifier or the rx section are turned on. in the tx mode, the vco is directly modulated with gfsk data at pad vmod. t ransmit preamplifier the tx preamplifier gain is programmable in seven steps of up to 4 db. it can either amplify the rf signal up to a level of 9 dbm (typical), or attenuate the rf signal to - 7.5 dbm (typical), see table 5. the output of the tx preamplifier at pads txa and txb can directly drive an antenna via a pin diode switch and band filter for bluetooth power class 2 and 3 applications. the type of tx preamplifier load can affect the frequency of the vco when the preamplifier powers up. this pulling effect can be counteracted by changing the time at which the preamplifier powers up, and is implemented by selecting one of two possible ramp-up modes: ramp-up mode 0 or ramp-up mode 1. in ramp-up mode 0, the preamplifier powers up on the rising edge of stctr. in ramp-up mode 1, the preamplifier powers up on the falling edge of stctr; see table 3 and timing diagrams figs 2 and 3. synthesizer m ain divider the main divider is clocked by the rf signal from the vco via the divide-by-two circuit at a frequency in the range 2402 to 2481 mhz. the divider ratio is programmable to any value in the range 2304 to 2559 inclusive; see table 6. r eference divider the reference divider is clocked by the reference signal at either 12 or 13 mhz via pad refclk. the divider ratio is programmable to 12 or 13. the circuit operates in the range 150 to 500 mv (rms); see table 4. p hase comparator the outputs of both the main divider and reference divider drive a phase comparator. its charge-pump circuit outputs current pulses at pad cp. the cp signal connects to pad vtune to complete the pll, which controls and phase locks the vco frequency. the duration of a current pulse is equal to the difference in time between the arrival of the leading edges of both dividers outputs. if the leading edge from the main divider arrives first, the charge-pump sinks current. if the leading edge from the reference divider arrives first, the charge-pump sources current. the cp signal current can be integrated by connecting an external rc loop filter to pad vtune as shown in fig.5. an internal drift compensation circuit maintains the vco frequency when the synthesizer is deactivated during open loop modulation. it requires an external capacitor to be connected to pad driftcomp. additional internal circuits ensure that the gain of the phase comparator remains linear even for small phase errors. serial programming bus the ic is programmed by a simple 3-line unidirectional serial bus comprising data (s_data), clock (s_clk) and enable (s_en). the serial data is loaded as a burst that is framed by s_en. the programming clock edges and corresponding data bits are ignored until s_en goes low. the program data is read directly by the main divider when s_en goes high. signals s_data and s_en should change value on the falling edge of s_clk. when inactive, s_clk should be held low. 2003 jul 04 6 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh the internal register stores only the last 32 bits of data that are serially clocked into the ic. additional leading bits are ignored, and no check is made on the number of clock pulses received. the allocation of data bits in the ic register is shown in table 1; the first bit entered is bit 31, the last bit is bit 0. signal s_en also controls the operation of the pll by either activating or deactivating the internal synthesizer. the pll opens for a brief interval after the falling edge of s_en. receiver the receiver is a fully integrated bluetooth rf and if strip, and demodulator. it provides all of the channel filtering required over the bluetooth band, and provides either an analog or a digital signal at output r_data. the very few off-chip components required should not require any trim adjustment. the receiver input signal is fed from the rf antenna, via either a band filter or an antenna switch to pads rfa and rfb. a representation of the instantaneous received signal strength is output at pad rssi. the local oscillator frequency is half the vco frequency and must be tuned to 1 mhz above the received channel frequency to produce a 1 mhz if. a dc offset extractor circuit obtains the dc component of the demodulated analog signal. a comparator compares the extracted dc with the demodulated analog signal to produce a digital stream signal at pad r_data. the level of extracted dc at the comparator is carefully adjusted by the occurrence and duration of signal stctr. during the alternating ones and zeroes of the trailer code, pad stctr should normally be set high. the baseband must ensure that stctr is synchronized with the received data. there are two modes for extracting the dc component from the demodulated signal: mode 0 and mode 1. both modes use two methods for dc extraction using a minmax circuit and an rc integrating circuit. the minmax circuit quickly determines the average dc component from the maximum and minimum swings of the demodulated signal. the remaining dc is extracted by one or two rc circuits. the minmax circuit is enabled following the 16 m s delay after the falling edge of s_en. when pad stctr goes high, the minmax circuit is disabled and the rc circuit is enabled. in mode 0, an rc circuit with a fast time constant is enabled. in mode 1 an rc circuit with a slow time constant is enabled. when stctr goes low, in mode 0, the fast time constant rc circuit is disabled and a slow time constant rc circuit is enabled. in mode 1, the slow time constant rc circuit remains enabled. the slow time constant rc circuit in either mode is disabled on the rising edge of the second s_en pulse. the rc resistors for modes 0 and 1 are internal; an external capacitor has to be connected to pad datam. the timing of these actions is shown in fig.4. operating mode the ic timing is controlled by signal s_en. in tx mode, after the register is programmed via s_data, the transmitter is activated on the falling edge of stctr. the rising edge of s_en activates the pll, closes the loop and powers up the vco regulator. the falling edge of stctr is emulated by the output signal on pad t_on which can be used to activate an external power amplifier or antenna switch. on the falling edge of this first s_en pulse, the loop opens, unless bit 9 (pll) is set; see figs 2 and 3, and table 1. in rx mode (bit trx = 1), the receiver is activated on the falling edge of s_en and is ready to demodulate data 16 m s later. the falling edge of s_en is emulated by the output signal on pad r_on which is suitable for driving an external receiver pin diode. at the end of a time slot period, a second s_en pulse is required to power-down the receiver or transmitter chain and synthesizer. power-down mode in power-down mode, current consumption is reduced to below 60 m a. pads r_on and t_on are in 3-state output mode. the ic enters power-down mode on the falling edge of each s_en pulse that is not preceded by an s_clk signal edge. 2003 jul 04 7 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh register description table 1 register bit allocation notes 1. in normal operation, 32 bits are programmed into the register; bit 31 is read in first and bit 0 last. 2. those bits allocated with values are reserved for test purposes and must be programmed with this value. register bit (1) value (2) name 31 1 - 30 0 - 29 1 - 28 to 26 0 - 25 1 - 24 to 23 0 - 22 - afc 21 to 20 1 - 19 - tx ramp-up mode 18 - dc extractor mode 17 0 - 16 1 - 15 0 - 14 - ref1 13 - ref0 12 to 10 - tx output power 9 - pll 8 - trx mode 7 to 0 - main divider programming 2003 jul 04 8 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh table 2 description of register bits table 3 tx ramp-up sequence table 4 reference divider programming bit function description 22 afc automatic frequency control. afc is used to follow transmitter carrier in rx mode. 0 = afc off and 1 = afc on 19 tx ramp-up mode see table 3 18 dc extractor mode dc extractor mode programming. 0 = mode 0; minmax - fast rc followed by slow rc time constants; 1 = mode 1, minmax - slow rc time constants; see timing diagrams in fig.4. 14 to 13 ref1 and ref0 these bits de?ne the reference divider ratio of the synthesizer; see table 4 12 to 10 tx output power these bits set the tx preampli?er output power; see table 5. 9 pll pll mode. 1 = pll remains on while the vco is on; 0 = the pll is opened at the start of the active slot period. 8 trx mode transmit or receive mode. 1 = rx mode selected; 0 = tx mode selected. 7 to 0 main divider programming the main divider ratio is equal to 2304 + n where the binary code for n is given by bits 7 to 0 with bit 7 as the msb; see table 6. tx ramp-up mode bit 19 result logic 0 logic 1 s_en rising edge stctr rising edge tx preampli?er bias stage on stctr rising edge stctr falling edge tx preampli?er output stage on stctr falling edge stctr falling edge pad t_on high s_en rising edge s_en rising edge pll on (closed) s_en falling edge s_en falling edge pll off (open; bit 9 = 0) s_en reset rising edge s_en reset rising edge pll off (closed; bit 9 = 1) s_en reset falling edge s_en reset rising edge tx preampli?er bias stage off s_en reset rising edge s_en reset rising edge tx preampli?er output stage off s_en reset rising edge s_en reset rising edge pad t_on low bit 14 bit 13 reference divider ratio reference frequency input (mhz) 0 0 12 12 1 0 13 13 2003 jul 04 9 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh table 5 transmitter preampli?er output power programming table 6 main divider programming (example) bit 12 bit 11 bit 10 tx output power, typical target (dbm) 000 - 7.5 001 - 4.5 010 - 0.5 011 + 1.5 100 + 4.5 101 + 8 110 + 9 111 + 9 bit main divider ratio synthesized frequency (mhz) channel 76543210 binary equivalent of n 2304 + n 1.0 (2304 + n) 011000102402 2402 tr ansmit channel 0 011000112403 2403 receive channel 0 101100002480 2480 tr ansmit channel 78 101100012481 2481 receive channel 78 2003 jul 04 10 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh limiting values in accordance with the absolute maximum rating system (iec 60134); note 1. note 1. all ground pads must be connected together externally on the printed circuit board to prevent a large current flowing through the die. handling inputs and outputs are protected against electrostatic discharge in normal handling. however it is good practice to take normal precautions appropriate to handling mos devices (see handling mos devices ). all pads withstand 1000 v hbm and 50 v mm esd test in accordance with eia/jesd22-a114-b class1 (june 2002) . thermal characteristics characteristics v cc = 3.0 v; t amb =25 c; d f = 160 khz; characteristics for which only a typical value is given are not tested unless otherwise speci?ed. symbol parameter min. max. unit v cc supply voltage - 0.3 + 3.6 v v n voltage on any pad 0 v cc v p i(max) maximum power at receiver input - 0 dbm t stg storage temperature - 55 + 125 c t j junction temperature - 150 c t amb ambient temperature - 30 + 85 c symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air; exposed die-pad soldered on a 4 layer fr4 pcb 30 k/w symbol parameter conditions min. typ. max. unit supply v cc supply voltage 2.7 3.0 3.4 v i cc(rx)(guard) receiver supply current during rx guard space vco = on pll = closed - 20 - ma i cc(rx) receiver supply current receiver = on; vco = on; pll = open - 40 48 ma i cc(tx)(guard) transmitter supply current during tx guard space vco = on; pll = closed - 17 - ma i cc(tx) transmitter supply current tx preampli?er = on; vco = on; bits [12:10] = 100 - 33 40 ma i cc(pd) supply current in power-down mode - 530 m a synthesizer main divider d/d main main divider ratio 2402 - 2481 f o(rf) rf output frequency 2402 - 2480 mhz 2003 jul 04 11 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh synthesizer reference divider input f i(xtal) crystal reference input frequency reference divider ratio 12 - 12 - mhz 13 - 13 - mhz v i(xtal)(rms) sinusoidal input signal level (rms value) 0.15 - 2v r i resistive part of the input impedance f ref = 13 mhz - 2 - k w c i capacitive part of the input impedance - 2.5 - pf phase detector f ph(comp) phase comparator frequency - 1 - mhz charge-pump output i l charge-pump leakage v cp = 0.5v cc ; note 1 -- 5na i o charge-pump output current v cp = 0.5v cc ; note 1 - 3.5 - ma vco f lo synthesized local oscillator (lo) frequency t amb = - 30 to + 85 c; note 2 2402 - 2481 mhz d f vco(vtune) frequency variation with voltage on pad vtune de?ned at lo frequency; 0.3 2003 jul 04 13 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh notes 1. suitable for a typical locking time of 160 m s including filter calibration. 2. measured and guaranteed only on the philips evaluation board, including printed-circuit board and balun filter; not including pin diode or band filter loss. measured on a packaged die. 3. the slope for g avg is evaluated with v vtune : 4. tx preamplifier power steps form a monotonic sequence. 5. ber measurement conditions are described in bluetooth ber method . 6. all receiver section parameters are measured at the receiver balun input, and a 3 db loss is assumed for the antenna path. the values expressed in dbc refer to the level of the interfering signal and are positive for interfering signal levels higher than the desired signal level. 7. the output of pad r_data is designed to interface with pad r_data of the philips baseband ic. a oob(block) rejection of an out-of-band blocking signal ber 10 - 3 ; desired channel = - 70 dbm; level of cw interferer referenced to level of desired channel; range: 2 to 3 ghz; note 2 40 43 - dbc p lo(feedthru) local oscillator feedthrough level f vco 2450 mhz -- 80 - dbm r i rf resistive part of the parallel input impedance balanced; at 2450 mhz - 76 -w c i rf capacitive part of the parallel input impedance balanced; at 2450 mhz - 0.6 - pf interface logic input and output signal levels; pads s_data, s_clk, s_en, t_on, r_on, r_data and stctr v ih high-level input voltage note 7; 1.4 - v cc v v il low-level input voltage -- 0.4 v v oh high-level output voltage for r_data output; note 7 2.4 2.5 - v v ol low-level output voltage for r_data output; note 7 -- 0.4 v i i(bias) input bias current logic 1 or logic 0 - 5 - +5 m a i source(r_on) , i source(t_on) output current source capability on pads r_on and t_on - 4 - ma f s_clk 3-wire bus frequency -- 7 mhz t s_en s_en pulse duration to enable power-down mode 2 --m s to lock the pll and calibrate 140 160 -m s symbol parameter conditions min. typ. max. unit d f slope () d f d v vtune ------------------------ - = 2003 jul 04 14 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh handbook, full pagewidth mdb181 guard space open closed s_clk s_data s_en stctr pll refclk preamplifier bias preamplifier out t_on tx power antenna power 3-state 3-state tx data fig.2 tx slot timing, ramp-up mode 0. 2003 jul 04 15 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh handbook, full pagewidth mdb182 guard space open closed s_clk s_data s_en stctr pll refclk preamplifier bias preamplifier out t_on tx power antenna power 3-state 3-state tx data fig.3 tx slot timing, ramp-up mode 1. 2003 jul 04 16 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh handbook, full pagewidth mdb183 preamble 16 m s delay 3-state 3-state guard space sync word trailer code header payload closed open s_clk s_data s_en rssi stctr minmax rcfast rcslow minmax rcslow internal vco on pll internal receiver on refclk r_data r_on dc extract mode 0: minmax-rcfast-rcslow dc extract mode 1: minmax-rcslow fig.4 rx slot timing. 2003 jul 04 17 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh application information the schematic shows a typical application diagram. component values depend on the application. two time constants are set by an external capacitor, their values are given and are suitable for most applications: the value of c datam is chosen to optimize the time constants of the afc, and dc extractor modes 0 and 1. the typical value of c datam for afc is 10 nf. if afc is not used, c datam adjusts the rc time constant of dc extractor modes 0 and 1. the value of c driftcomp is chosen to set the time constant of the vco drift compensation. the typical value is 6.8 nf. handbook, full pagewidth uaa3559uh mdb384 1 2 3 4 5 6 7 8 25 24 22 21 20 19 18 l/ 4 17 9 10 11 12 13 14 15 16 34 33 31 30 29 28 27 26 refclk v dd v cc s_clk test2 v cc(rx) rfb rfa rxgnd test1 datam r_data rssi v cc(pll) pllgnd v cc(tx) txb txa txgnd t_on r_on v ss s_data vmod driftcomp cp vtune vcognd reggnd vreg v cc(reg) s_en stctr 23 cpgnd v cc v cc v cc v cc receive balun c datam 10 nf c driftcomp 6.8 nf transmit balun fig.5 application diagram. 2003 jul 04 18 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh bonding pad locations all x/y coordinates represent the position of the centre of the pad (in m m) with respect to the origin (x/y = 0/0) of the die; see fig. x). the size of all square pads is 90 m mx90 m m. the size of other pad shapes are less than 80 m mx80 m m. symbol pad coordinates xy rssi 1 - 1103.7 + 759.3 refclk 2 - 1103.7 + 594.3 v dd 3 - 1103.7 + 285.3 r_data 4 - 1103.7 + 109.4 v ss 5 - 1103.7 - 79.3 s_data 6 - 1103.7 - 232.7 stctr 7 - 1103.7 - 550.1 s_en 8 - 1103.7 - 737.7 s_clk 9 - 884.3 - 1001.3 test1 10 - 705.5 - 1001.3 data m 1 1 - 372.1 - 1001.3 test2 12 - 170.2 - 1001.3 v cc(rx) 13 + 374.0 - 1001.3 rfb 14 + 619.3 - 1001.3 rfa 15 + 775.8 - 1001.3 rxgnd 16 + 951.7 - 1001.3 r_on 17 + 1104.3 - 809.1 t_on 18 + 1104.3 - 642.4 txgnd 19 + 1104.3 - 485.8 txa 20 + 1104.3 - 192.6 txb 21 + 1104.3 - 28.6 v cc(tx) 22 + 1104.3 + 238.5 cpgnd 23 + 1104.3 + 503.5 pllgnd 24 + 1104.3 + 692.4 v cc(pll) 25 + 1104.3 + 860.0 v cc(reg) 26 + 939.2 + 1006.7 vreg 27 + 759.8 + 1006.7 reggnd 28 + 587.8 + 1006.7 vcognd 29 + 313.4 + 1006.7 vtune 30 + 28.6 + 1006.7 cp 31 - 167.4 + 1006.7 n.c. 32 - 532.9 + 1006.7 driftcomp 33 - 712.8 + 1006.7 vmod 34 - 889.8 + 1006.7 2003 jul 04 19 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh handbook, full pagewidth mdb147 34 uaa3559uh 910 11 12 13 141516 33 32 31 30 29 28 27 26 25 1 orientation identifier 2 3 4 5 6 7 8 24 23 22 21 20 19 18 17 y x 0 0 2.6 mm 2.3 mm fig.6 bonding pad locations. 2003 jul 04 20 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2003 jul 04 21 philips semiconductors objective speci?cation bluetooth rf transceiver uaa3559uh bare die ? all die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of philips' delivery. if there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. there are no post packing tests performed on individual die or wafer. philips semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. accordingly, philips semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. it is the responsibility of the customer to test and qualify their application in which the die is used. ? koninklijke philips electronics n.v. 2003 sca75 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands 403506/01/pp 22 date of release: 2003 jul 04 document order number: 9397 750 10912 |
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