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| savantic semiconductor product specification silicon pnp power transistors 2N6246 2n6247 2n6248 description with to-3 package low collector saturation voltage excellent safe operating area high gain at high current applications general-purpose types of switching and linear-amplifier applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2N6246 -70 2n6247 -90 v cbo collector-base voltage 2n6248 open emitter -110 v 2N6246 -60 2n6247 -80 v ceo collector-emitter voltage 2n6248 open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i b base current -5 a p t total power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.4 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2N6246 2n6247 2n6248 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N6246 -60 2n6247 -80 v ceo(sus) collector-emitter sustaining voltage 2n6248 i c =-0.2a ;i b =0 -100 v 2N6246 i c =-7a; i b =-0.7a 2n6247 i c =-6a; i b =-0.6a v cesat-1 collector-emitter saturation voltage 2n6248 i c =-5a; i b =-0.5a -1.3 v 2N6246 i c =-15a; i b =-3a -2.5 2n6247 i c =-15a; i b =-4a v cesat-2 collector-emitter saturation voltage 2n6248 i c =-10a; i b =-2a -3.5 v 2N6246 i c =-7a ; v ce =-4v -2.0 2n6247 i c =-6a ; v ce =-4v -1.8 v be base-emitter on voltage 2n6248 i c =-5a ; v ce =-4v -1.8 v i ceo collector cut-off current v ce =1/2rated v ceo ; i b =0 -1.0 ma 2N6246 v ce =-65v; v be =-1.5v v ce =-55v; v be =-1.5v t c =150 -0.2 -5.0 2n6247 v ce =-85v; v be =-1.5v v ce =-70v; v be =-1.5v t c =150 -0.2 -5.0 i cex collector cut-off current 2n6248 v ce =-100v; v be =-1.5v v ce =-90v; v be =-1.5v t c =150 -0.2 -5.0 ma 2N6246 -5.0 2n6247 i ebo emitter cut-off current 2n6248 v eb =-5v; i c =0 -1.0 ma 2N6246 i c =-7a ; v ce =-4v 2n6247 i c =-6a ; v ce =-4v h fe-1 dc current gain 2n6248 i c =-5a ; v ce =-4v 20 100 2N6246 i c =-15a ; v ce =-4v 2n6247 i c =-15a ; v ce =-4v h fe-2 dc current gain 2n6248 i c =-10a ; v ce =-4v 5 savantic semiconductor product specification 3 silicon pnp power transistors 2N6246 2n6247 2n6248 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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