rev.1.00 sep. 10, 2004 page 1 of 7 HAT1126R, HAT1126Rj silicon p channel power mos fet high speed power switching rej03g0406-0100 rev.1.00 sep.10.2004 features ? low on-resistance ? capable of 4.5 v gate drive ? high density mounting ? ?j? is for automotive application high temperature d-s leakage guarantee avalanche rating outline sop-8 1 2 3 4 5 6 7 8 g d s d g d s d mos1 mos2 1 2 78 4 56 3 1, 3 source 2, 4 gate 5, 6, 7, 8 drain absolute maximum ratings (ta = 25 c) ratings item symbol HAT1126R HAT1126Rj unit drain to source voltage v dss ?60 ?60 v gate to source voltage v gss 20 20 v drain current i d ?6.0 ?6.0 a drain peak current i d (pulse) note1 ?48 ?48 a avalanche current i ap note4 ? ?6.0 a avalanche energy e ar note4 ?3.08mj channel dissipation pch note2 22w channel dissipation pch note3 33w channel temperature tch 150 150 c storage temperature tstg ?55 to +150 ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. 1 drive operation: when us ing the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10 s 3. 2 drive operation: when us ing the glass epoxy board (fr4 40 x 40 x 1.6 mm), pw 10 s 4. value at tch = 25 c, rg 50 ?
HAT1126R, HAT1126Rj rev.1.00 sep. 10, 2004, page 2 of 7 electrical characteristics (ta = 25 c) item symbol min typ max unit unit drain to source breakdown voltage v (br)dss ?60 ? ? v i d = ?10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 ? ? v i g = 100 a, v ds = 0 zero gate voltage drain current i dss ???1 av ds = ?60 v, v gs = 0 HAT1126R i dss ??? a zero gate voltage drain current HAT1126Rj i dss ? ? ?10 a v ds = ?48 v, v gs = 0 ta = 125 c gate to source leak current i gss ?? 10 av gs = 16 v, v ds = 0 gate to source cutoff voltage v gs(off) ?1.0 ? ?2.5 v v ds = ?10 v, i d = ?1 ma forward transfer admittance |y fs |4.07.0 ? si d = ?3.0 a note5 , v ds = ?10 v r ds(on) ?4050m ? i d = ?3.0 a note5 , v gs = ?10 v static drain to source on state resistance r ds(on) ?6085m ? i d = ?3.0 a note5 , v gs = ?4.5 v input capacitance ciss ? 2300 ? pf output capacitance coss ? 230 ? pf reverse transfer capacitance crss ? 140 ? pf v ds = ?10 v, v gs = 0 f = 1 mhz total gate charge qg ? 37 ? nc gate to source charge qgs ? 6.5 ? nc gate to drain charge qgd ? 8 ? nc v dd = ?25 v v gs = ?10 v i d = ?6.0 a turn-on delay time td(on) ? 20 ? ns rise time tr ? 15 ? ns turn-off delay time td(off) ? 55 ? ns fall time tf ? 10 ? ns v gs = ?10 v, i d = ?3.0 a v dd ? ?30 v r l = 10 ? r g = 4.7 ? body-drain diode forward voltage v df ? ?0.85 ?1.1 v i f = ?6.0 a, v gs = 0 note5 body-drain diode reverse recovery time trr ? 30 ? ns i f = ?6.0 a, v gs = 0 dif/dt = 100 a / s notes: 5. pulse test
HAT1126R, HAT1126Rj rev.1.00 sep. 10, 2004, page 3 of 7 main characteristics 4.0 3.0 2.0 1.0 0 50 100 150 200 power vs. temperature derating typical transfer characteristics typical output characteristics 2 drive o peration 1 drive operation note 6: when using the glass epoxy board. ( fr4 40 x 40 x 1.6 mm) channel dissipation pch (w) drain current i d (a) drain current i d (a) ambient temperature ta ( c) gate to source voltage v gs (v) drain to source voltage v ds (v) ?10 ?8 ?6 ?4 ?2 0 ?1 ?2 ?3 ?4 ?5 ?3 v v gs = ?2.5 v pulse test ?10 ?8 ?6 ?4 ?2 0?1?2?3?4?5 tc = 75 c 25 c ? 25 c v ds = ?10 v pulse test ?0.01 ?10 ?1 ?0.1 ?0.01 ?0.1 ?1 ?10 maximum safe operation area ?100 ?100 100 s 10 s 1 ms pw = 10 ms note6 dc opera tion (pw < 10 s) drain to source voltage v ds (v) drain current i d (a) ?4 v ?10 v static drain to source on state resistance vs. drain current drain to source saturation voltage vs. gate to source voltage drain to source on state resistance r ds(on) (m ? ) drain to source saturation voltage v ds(on) (mv) drain current i d (a) gate to source voltage v gs (v) ?400 ?300 ?200 ?100 0 ?5 ?10 ?15 ?20 ?3 a ?1 a i d = ?5 a ?1 ?10 ?100 ?3 ?30 1000 200 500 100 20 10 50 v gs = ?4.5 v ?10 v pulse test pulse test ta = 25 c 1 shot pulse operation in this area is limited by r ds(on) test condition. when using the glass epoxy board. (fr4 40 x 40 x 1.6 mm), (pw 10s)
HAT1126R, HAT1126Rj rev.1.00 sep. 10, 2004, page 4 of 7 static drain to source on state resistance vs. temperature ?0.01 ?0.03 ?0.1 ?0.3 ?1 ?3 ?10 100 3 0.3 1 30 10 0.03 0.1 0.01 forward transfer admittance vs. drain current 25 c tc = ?25 c v ds = ?10 v pulse test static drain to source on state resistance r ds(on) (m ? ) forward transfer admittance |yfs| (s) case temperature tc ( c) drain current i d (a) 160 120 80 40 ?50 0 ?25 75 50 25 100 125 150 0 v gs = ?4.5 v ?10 v ?1 a ?3 a ?5 a i d = ?1, ?3, ?5 a pulse test 75 c ?0.1 ?0.3 ?1 ?3 ?10 body-drain diode reverse recovery time 0 ?10 ?20 ?30 ?40 ?50 3000 10000 1000 100 300 typical capacitance vs. drain to source voltage 0 ?20 ?40 ?60 ?80 ?100 0 0 ?4 ?8 ?12 ?16 16 32 48 64 160 ?20 dynamic input characteristics 100 50 5 10 2 1 20 1000 300 30 100 3 10 1 ?0.1 ?0.3 ?1 ?3 ?10 switching characteristics di / dt = 50 a / s v gs = 0, ta = 25 c 10 30 v gs = 0 f = 1 mhz ciss coss crss i d = ?6 a v gs v ds v dd = ?50v ?25v ?10v v dd = ?50 v ?25 v ?10 v v gs = ?10 v, v dd = ?30 v pw = 5 s, r g = 4.7 ? , duty 1 % t r t d(on) t d(off) reverse drain current i dr (a) reverse recovery time trr (ns) capacitance c (pf) drain to source voltage v ds (v) gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) switching time t (ns) drain current i d (a) t f
HAT1126R, HAT1126Rj rev.1.00 sep. 10, 2004, page 5 of 7 ?10 ?8 ?6 ?4 ?2 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 pulse test v gs = 0, 5 v ?10 v ?5 v source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage pulse width pw (s) normalized transient thermal impedance vs. pulse width (1 drive operation) normalized transient thermal impedance s (t) 10 100 1 m 10 m 100 m 1 10 100 1000 10000 10000 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot puls e dm p pw t d = pw t ch ? f(t) = s (t) ch ? f ch ? f = 125 c/w, ta = 25 c when using the glass epoxy board (fr4 40 40 1.6mm) 10 100 1 m 10 m 100 m 1 10 100 1000 pulse width pw (s) normalized transient thermal impedance vs. pulse width (2 drive operation) normalized transient thermal impedance s (t) 10 1 0.1 0.01 0.001 0.0001 d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse dm p pw t d = pw t ch ? f(t) = s (t) ch ? f ch ? f = 166 c/w, ta = 25 c when using the glass epoxy board (fr4 40 40 1.6 mm)
HAT1126R, HAT1126Rj rev.1.00 sep. 10, 2004, page 6 of 7 vin monitor d.u.t. vin -10 v r l v = -10 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor rg 90% 10% t f switching time test circuit switching time waveform d. u. t rg i monitor ap v monitor ds v dd 50 ? vin -15 v 0 i d v ds i ap v (br)dss l v dd avalanche test circuit avalanche waveform e = l ? i ? 2 1 v v - v ar ap dss dss dd 2
HAT1126R, HAT1126Rj rev.1.00 sep. 10, 2004, page 7 of 7 package dimensions package code jedec jeita mass (reference value) fp-8da conforms ? 0.085 g *dimension including the plating thickness base material dimension 1.75 max 4.90 0.25 0.15 0? ? 8? m 8 5 1 4 1.27 3.95 0.40 0.06 *0.42 0.08 5.3 max 0.75 max 0.14 + 0.11 ? 0.04 0.20 0.03 *0.22 0.03 0.60 + 0.67 ? 0.20 6.10 + 0.10 ? 0.30 1.08 as of january, 2003 unit: mm ordering information part name quantity shipping container HAT1126R-el-e 2500 pcs taping HAT1126Rj-el-e 2500 pcs taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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