1 item symbol ratings unit drain-source voltage v ds 200 v dsx *5 170 continuous drain current i d 30 pulsed drain current i d(puls] 120 gate-source voltage v gs 30 non-repetitive avalanche current i as *2 30 maximum avalanche energy e as *1 387 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 2.02 tc=25 c 135 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3594-01 fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =200v v gs =0v v ds =160v v gs =0v v gs =30v i d =15a v gs =10v i d =15a v ds =25v v cc =48v i d =15a v gs =10v r gs =10 ? min. typ. max. units v v a na m ? s pf nc a v s c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.926 62.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =100v i d =30a v gs =10v l=100 h t ch =25c i f =30a v gs =0v t ch =25c i f =30a v gs =0v -di/dt=100a/s t ch =25c v v a a v a mj kv/s kv/s w c c 200 3.0 5.0 25 250 10 100 50 66 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 30 1.10 1.65 0.19 1.4 -55 to +150 outline drawings (mm) to-220ab equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series *3 i f -i d , -di/dt=50a/s, vcc bv dss , tch 150c = < = < = < *1 l=689 h, vcc=48v *2 tch 150c = < *4 v ds 200v < = www.fujielectric.co.jp/denshi/scd *5 v gs =-30v
2 characteristics 2SK3594-01 fuji power mosfet id=f(vgs):80s pulse test, vds=25v,tch=25c id=f(vds):80s pulse test,tch=25c gfs=f(id):80s pulse test, vds=25v,tch=25c rds(on)=f(id):80s pulse test, tch=25c 0 25 50 75 100 125 150 0 25 50 75 100 125 150 175 200 allowable power dissipation pd=f(tc) pd [w] tc [ c] 0 25 50 75 100 125 150 0 100 200 300 400 500 eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=48v,i(av)<=30a 024681012 0 20 40 60 80 100 120 20v 7.0v 10v 8v 6.5v 7.5v 6.0v id [a] vds [v] typical output characteristics vgs=5.5v 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance 0 20 40 60 80 100 120 0.00 0.05 0.10 0.15 0.20 7.0v 6.5v rds(on) [ ? ] id [a] typical drain-source on-state resistance 10v 20v 8v 7.5v 6.0v vgs= 5.5v
3 2SK3594-01 fuji power mosfet vgs=f(qg):id=30a, tch=25c if=f(vsd):80s pulse test,tch=25c t=f(id):vcc=48v, vgs=10v, rg=10 ? -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 180 200 rds(on) [ m ? ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=15a,vgs=10v -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 a vgs(th) [v] tch [ c] 0 1020304050607080 0 2 4 6 8 10 12 14 qg [nc] typical gate charge characteristics vgs [v] vcc= 100v 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 c [nf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id td(on) tr tf td(off) t [ns] id [a]
4 2SK3594-01 fuji power mosfet i av =f(t av ):starting tch=25c. vcc=48v avalanche current i av [a] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec] 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 10 0 10 1 10 2 single pulse maximum avalanche current pulsewidth t av [sec]
|
