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| savantic semiconductor product specification silicon npn power transistors BD175 bd177 bd179 d escription with to-126 package complement to type bd176/178 /180 applications for medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit BD175 45 bd177 60 v cbo collector-base voltage bd179 open emitter 80 v BD175 45 bd177 60 v ceo collector-emitter voltage bd179 open base 80 v v ebo emitter -base voltage open collector 5 v i c collector current (dc) 3 a i cm collector current-peak 7 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -65~150
savantic semiconductor product specification 2 silicon npn power transistors BD175 bd177 bd179 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =1a; i b =0.1a 0.8 v v be base-emitter on voltage i c =1a ; v ce =2v 1.3 v BD175 45 bd177 60 v ceo(sus) collector-emitter sustaining voltage bd179 i c =0.1a; i b =0 80 v BD175 v cb =45v; i e =0 bd177 v cb =60v; i e =0 i cbo collector cut-off current bd179 v cb =80v; i e =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 1 ma h fe-1 dc current gain i c =150ma ; v ce =2v 40 250 h fe-2 dc current gain i c =1a ; v ce =2v 15 f t transition frequency i c =250ma; v ce =10v 3 mhz h fe-1 classifications 6 10 16 40-100 63-160 100-250 classification 16 :only BD175 savantic semiconductor product specification 3 silicon npn power transistors BD175 bd177 bd179 package outline fig.2 outline dimensions |
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