abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v rsm = 3000 v i f(av)m = 1285 a i f(rms) = 2019 a i fsm = 1510 3 a v f0 = 0.933 v r f = 0.242 m w rectifier diode 5sdd 11d2800 doc. no. 5sya1166-00 okt. 03 very low on-state losses optimum power handling capability blocking maximum rated values 1) parameter symbol conditions value unit repetetive peak reverse voltage v rrm f = 50 hz, t p = 10ms, t j = -40...160c 2800 v non - repetetive peak reverse voltage v rsm f = 5 hz, t p = 10ms, t j = -40...160c 3000 v characteristic values parameter symbol conditions min typ max unit max. (reverse) leakage current i rrm v rrm , tj = 160c 30 ma mechanical data maximum rated values 1) parameter symbol conditions min typ max unit mounting force f m 8 10 12 kn acceleration a device unclamped 50 m/s 2 acceleration a device clamped 100 m/s 2 characteristic values parameter symbol conditions min typ max unit weight m 0.3 kg housing thickness h f m = 10 kn, t a = 25 c 25.5 26.5 mm surface creepage distance d s 33 mm air strike distance d a 18 mm 1) maximum rated values indicate limits beyond which damage to the device may occur
5sdd 11d2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1166-00 okt. 03 page 2 of 6 on-state maximum rated values 1) parameter symbol conditions min typ max unit max. average on-state current i f(av)m 50 hz, half sine wave, t c = 85 c 1285 a max. rms on-state current i f(rms) 2019 a max. peak non-repetitive surge current i fsm 1510 3 a limiting load integral i 2 t t p = 10 ms, t j = 160c, v r = 0 v 1.12510 6 a 2 s max. peak non-repetitive surge current i fsm 1610 3 a limiting load integral i 2 t t p = 8.3 ms, t j = 160c, v r = 0 v 1.06610 6 a 2 s characteristic values parameter symbol conditions min typ max unit on-state voltage v f i f = 1500 a, t j = 160c 1.3 v threshold voltage v (t0) 0.933 v slope resistance r t t j = 160c i t = 1500...4500 a 0.242 m w switching characteristic values parameter symbol conditions min typ max unit recovery charge q rr di f /dt = -30 a/ s, v r = 100 v i frm = 1000 a, t j = 160c 2200 3000 m as
5sdd 11d2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1166-00 okt. 03 page 3 of 6 thermal maximum rated values 1) parameter symbol conditions min typ max unit operating junction temperature range t vj -40 160 c storage temperature range t stg -40 175 c characteristic values parameter symbol conditions min typ max unit thermal resistance junction to case r th(j-c) double-side cooled f m = 8...12 kn 32 k/kw r th(j-c)a anode-side cooled f m = 8...12 kn 50 k/kw r th(j-c)c cathode-side cooled f m = 8...12 kn 88 k/kw thermal resistance case to heatsink r th(c-h) double-side cooled f m = 8...12 kn 8 k/kw r th(c-h) single-side cooled f m = 8...12 kn 16 k/kw analytical function for transient thermal impedance: ) e - (1 r = (t) z n 1 i t/ - i th c) - th(j ? = i t i 1 2 3 4 r th i (k/kw) 11.600 10.110 7.870 2.410 t i (s) 0.7033 0.2185 0.0588 0.0042 fig. 1 transient thermal impedance junction-to- case.
5sdd 11d2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1166-00 okt. 03 page 4 of 6 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 0 1 2 3 v f ( v ) i f ( a ) 25 c 160 c 0 5 10 15 20 25 30 1 10 100 t ( ms ) i f s m ( k a ) 0 0,5 1 1,5 2 2,5 3 i 2 d t ( 1 0 6 a 2 s ) i fsm 25c i 2 dt 25c 160 c 160c fig. 2 max. on-state characteristics. fig. 3 surge forward current vs. pulse length. half sine wave, single pulse, v r = 0 v 0 500 1000 1500 2000 2500 0 400 800 1200 1600 i fav ( a ) p t ( w ) 60 120 180 dc 0 500 1000 1500 2000 2500 0 500 1000 1500 i fav ( a ) p t ( w ) y = 30 60 90 120 180 270 dc fig. 4 forward power loss vs. average forward current, sine waveform, f = 50 hz fig. 5 forward power loss vs. average forward current, square waveform, f = 50 hz
5sdd 11d2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. doc. no. 5sya1166-00 okt. 03 page 5 of 6 60 70 80 90 100 110 120 130 140 150 160 170 0 400 800 1200 1600 i fav ( a ) t c ( c ) 180 60 120 dc 60 70 80 90 100 110 120 130 140 150 160 170 0 400 800 1200 1600 i fav ( a ) t c ( c ) 180 dc 270 120 90 60 y = 30 fig. 6 max. case temperature vs aver. forward current, sine waveform, f = 50 hz fig. 7 max. case temperature vs aver. forward current, square waveform, f = 50 hz 100 1000 10000 1 10 100 di f /dt ( a/s ) q r r ( c ) min max 10 100 1000 1 10 100 di f /dt ( a/s ) i r r m ( a ) max min fig. 8 reverse recovery charge vs. di f /dt, i f = 1000 a; t j = t jmax , limit values fig. 9 peak reverse recovery current vs. di f /dt, i f = 1000 a; t j = t jmax , limit values
5sdd 11d2800 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd doc. no. 5sya1166-00 okt. 03 semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors fig. 10 outline drawing. all dimensions are in millimeters and represent nominal values unless stated otherwise. related application notes: doc. nr titel 5sya 2020 design of rc-snubbers for phase control applications 5sya 2029 designing large rectifiers with high power diodes 5sya 2036 recommendations regarding mechanical clamping of press pack high power semiconductors please refer to http://www.abb.com/semiconductors for actual versions.
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