1/8 october 2003 STN5PF20V p-channel 20v - 0.065 w -5asot-223 2.5v-drive stripfet? ii power mosfet n typical r ds (on) = 0.065 w (@4.5v) n typical r ds (on) = 0.085 w (@2.5v) n ultra low threshold gate drive (2.5v) n standard outline for easy automated surface mount assembly description this power mosfet is the latest development of stmicroelectronics unique single feature size ? strip-based process. the resulting transistor shows extremely extremely low on-resistance when driven at 2.5v. applications n power management in cellular phones n dc-dc converters n battery management in nomadic equipment ordering information type v dss r ds(on) i d STN5PF20V 20 v < 0.080 w (@4.5v) <0.10 w (@2.5v) 5a sales type marking package packaging STN5PF20V n5pf20v sot-223 tape & reel sot-223 1 2 2 3 internal schematic diagram
STN5PF20V 2/8 absolute maximum ratings ( ) pulsewidthlimitedbysafeoperatingarea note: for the p-channel mosfet actual polarity of voltages and current has to be reversed thermal data (*) when mounted on fr-4 board of 1inch2 pad, 0.5oz cu electrical characteristics (t j = 25 c unless otherwise specified) off on (1) dynamic symbol parameter value unit v ds drain-source voltage (v gs =0) 20 v v dgr drain-gate voltage (r gs =20k w ) 20 v v gs gate- source voltage 8 v i d drain current (continuous) at t c = 25c 5a i d drain current (continuous) at t c = 100c 3.1 a i dm ( ) drain current (pulsed) 20 a p tot total dissipation at t c = 25c 2.5 w rthj-pcb(*) thermal resistance junction-pc boardmax 62.5 c/w rthj-amb thermal resistance junction-ambient max 90 c/w t j max. operating junction temperature C55 to 150 c t stg storage temperature C55 to 150 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250a,v gs = 0 20 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 8v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 0.45 v r ds(on) static drain-source on resistance v gs = 4.5v, i d = 2.5 a 0.065 0.080 w v gs = 2.5v, i d = 2.5 a 0.085 0.10 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d = 2.5 a 6.6 s c iss input capacitance v ds = 15 v, f = 1 mhz, v gs =0 412 pf c oss output capacitance 179 pf c rss reverse transfer capacitance 42.5 pf
3/8 STN5PF20V electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =10v,i d = 2.5 a r g = 4.7 w v gs =2.5v (see test circuit, figure 1) 11 ns t r rise time 47 ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =10v,i d =5a, v gs = 2.5v (see test circuit, figure 2) 4.5 0.73 1.75 6 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off-delay time fall time v dd =10v,i d =2.5a, r g =4.7 w, v gs = 2.5 v (see test circuit, figure 1) 39 20 ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 5 a i sdm source-drain current (pulsed) 20 a v sd (1) forward on voltage i sd = 5 a, v gs =0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100a/s, v dd =16v,t j = 150c (see test circuit, figure 3) 32 12.8 0.8 ns nc a
STN5PF20V 4/8 thermal impedence safe operating area static drain-source on resistance transconductance output characteristics transfer characteristics
5/8 STN5PF20V capacitance variations normalized gate thereshold voltage vs temp. normalized on resistance vs temperature gate charge vs gate-source voltage source-drain diode forward characteristics
STN5PF20V 6/8 fig. 3: test circuit for diode recovery behaviour fig. 1: switching times test circuit for resistive load fig. 2: gate charge test circuit
7/8 STN5PF20V dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data
STN5PF20V 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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