AMIS-734256, amis-734512, amis-734024 data sheet 25 m- p itch wide a p ertu re s p ectr o sc o p ic photodi ode arr a y s 1.0 description ami semicond uctor?s hsn series is famil y of self-scann in g photo d io de solid-st a te lin e a r imagi ng arr a y s . t hese ph otodi od e sens or s empl o y ami se micon ductor?s propri e tar y cm os imag e se n s ing techn o l o g y to i n tegrat e t he s ensors int o a si ng le m o n o l i thic c h ip. t h es e sensors are op timall y desi g n e d for a ppl icati o ns in spectrosc o p y . accor d in g l y , th ese s ens o r s cont ai n a li n ear arr a y of ph otodi od es w i th an optim ized g eometric a l asp e ct ratio (25 m aperture p i tch x 25 00 m apertur e w i dth) for helpi ng to mainta in mech anic a l stabi lit y i n spectrosco pic i n struments a n d for provi d i ng a larg e li ght-ca p turin g ab ilit y. t he famil y of s ensors c onsist s of photo d io d e arra y s of var i ous len g ths, 256, 5 12, and 102 4 p i xels. t he hsn p hot odi ode arra ys are mo unte d i n 2 2 -pi n cer a mic sid e -br a ze d d ual- i n-l i ne p a ckag e s, w h ic h fit i n stan dar d dip s o ckets. a dia g ram of its pin- out confi g u r ation is se en i n f i gure 1. f i gure 1: p i n out configur ation 1 a m i se m i co nd uc t o r ? aug. 06, m-20603 -001 www.amis.com
AMIS-734256, amis-734512, amis-734024 data sheet 25 m- p itch wide a p ertu re s p ectr o sc o p ic photodi ode arr a y s 2.0 key features ? selecta b le s a turatio n char ge capac ities: 65 p c capac it y for w i der d y nam ic rang e an d 25p c for lo w e r n o i s e read out ? w i de spectra l respo n se (1 80 ? 100 0nm) for uv and ir res pons e ? np juncti on p h o todi od es w i th super ior resist ance to uv d a m age ? lo w dark current ? integratio n time up to 11 se c onds at room t e mper ature ? integratio n time e x tend ed to hours b y co oli n g ? anti-bl oomi ng circuitr y ? high l i n earit y ? lo w p o w e r d i s s ipati on (less t han 1mw ) ? geometrica l structure for en ha nced stab ilit y a nd reg i stration ? standar d 22- le ad du al-i n-li ne ic packag e 3.0 sensor characteristics f i gure 2: geometr y and layout of p hotodio d e p i xels 2 a m i se m i co nd uc t o r ? aug. 06, m-20603 -001 www.amis.com
AMIS-734256, amis-734512, amis-734024 data sheet 25 m- p itch wide a p ertu re s p ectr o sc o p ic photodi ode arr a y s durin g norm a l oper ation, the photo n s inc i de nt in or ne ar the np p hotod i ode j uncti on g ener ate free c harg e s, w h ic h are col l ecte d an d stored on the j unctio n ' s d epl e t ion c a p a citanc e. t he num ber of co ll ected c harg e s is pr op ortion al t o th e l i ght e x p o sure. f i gure 3 sho w s the stored si gn al char ge as fu nction of lig ht expos ure at a w a vel e n g th of 575 nm. t he ex p o sur e is the prod uct of the light i n ten si ty in nw /cm 2 and i n tegratio n time i n secon d s. t h e charg e accu mulates l i ne arl y u n til reac hi n g the saturati o n charg e an d the corres p o ndi ng expos ure is the saturation e x p o sure. t here are t w o s a tu rati on limits w h ich are descr ibe d i n section 4. 0. t he respons ivit y m a y b e ca lcu l ated as th e sa turation char ge divi de d b y t h e saturati on e x p o sure. t he pr e d icted t y p i ca l r e spo n siv it y of a photo d i ode is 1 . 5 10 -4 c/j/cm 2 at 575 nm. f i gure 4 sho w s th e pred icted res pons ivit y of the photod io des a s a function of w a vel e n g th. f i gure 3: stored signal char ge as a f unc tion of e x posure at a w a velength of 575nm f i gure 4: p r edicted spectral r e spons e 3 a m i se m i co nd uc t o r ? aug. 06, m-20603 -001 www.amis.com
AMIS-734256, amis-734512, amis-734024 data sheet 25 m- p itch wide a p ertu re s p ectr o sc o p ic photodi ode arr a y s t he qua ntum efficienc y (qe) can b e ca lcul ated b y divi din g the re s pons i v it y b y th e are a of th e s ens o r ' s elem ent a n d mu ltipl y i n g th e resulti ng ratio b y th e en erg y per ph oton i n e l ectron vo lts (ev). t he dark curr e n t is t y p i cal l y 0 . 2pa at 25 c a nd v a ries as fu ncti on of tem p erature. t he d a rk cu rre nt w i ll contri bute dar k-sign al c harg e s and thes e ch ar ges w i ll i n crea se li ne arl y w i th inte gratio n tim e . t he dark s i gna l a nd t he p hoto-g e n e rated sign al comb in ed r e sult in th e total sign al ch a r ge. 4.0 selectable charge capacity t he hsn devic es have the un iqu e feature of havi ng a sel e ct abl e c harg e ca pacit y. t here is a bank of ca pacitors w i t h o ne cap a cito r for each ph otod io de pi xe l. w hen the c apac itors are c o n necte d to the ph otod i odes, th e y g i ve the photo d i o d e s a c har ge c a pacit y of t y p ica l l y 65p c. t h is large char ge cap a cit y is us eful in ap plic ations that demand hig h d y nam ic rang e and h i g h signal-to- no is e ratios. w i th the capac itors dis c onn ected, t he photo d io des typica ll y hav e an intrins i c charg e c apac ity of 25p c. w i th a reduce d capac itanc e, th e photo d i ode arr a y c an op erate w i th a lo w e r re set (kt c ) noise . t he addcap pin is prov id ed to control th e conn ectio n of the cap a citors . w hen add c ap is hi gh, a l l the cap a citors are co nn ecte d. w hen ad dca p is lo w , al l t he ca pac itors are d i sco nnect ed. it is a d vis ed th at all the phot odi od es are res e t after each tog g le of addcap. t h is is simpl y do ne b y cl ockin g on e lin e scan of the ph otod iod e arra y . 5.0 anti-blooming circuit each p hoto d io de p i xel has a built-i n a n ti-bl o omin g circu i t struct ure. w i tho u t an a n ti-b loo m ing circ uit, it i s possi ble th at a f raction of the exc e ss ch arge from one p i xe l w i ll fl o w i n to n e ig hbor in g pi xels. t he anti-bl oomi ng circ uit preve n ts this b y re directi ng th e e x ce ss curr ent into the a n ti-bl oomi ng dr ain b e fore the p hoto d io de is too fu ll . a self-biase d anti-b l oom ing gate sets the l e vel at w h ich t he ch ar ge b e g i n s to flo w into t he drai n. t h ink of it this w a y . if the p hotod io de were yo ur bathro o m sink, th en t he anti-b l oom i ng circ uit w o u l d b e yo ur si nk? s overflo w drai n. t he anti-blo o ming circ uit ma y be dis abl ed b y grou ndi ng the anti-b l oom ing gate. t h is w o u l d, in e ffect, raise the drai n lev e l. 6.0 self-scanning circuit f i gure 5 s h o w s a simplifi e d electrica l l y e quiv a le nt circu i t diagr am of the ph otodi od e arra y. a mos read s w itc h conn ects ev e r y photo d i ode in the arr a y to a commo n o u tp ut vid eo li ne. i n cid ent p hoto n s ge nerat e a n el ectron c har ge, w h ich is c o llect ed on ea ch imagi ng ph oto d io de w h i l e t h e s w itch is op en. t he shift r egister is activ a ted b y th e st art pu lse. a pu lse pr op ag ates throu gh eac h shift register sta ge and activates t he mos read s w itc hes se qu e n tiall y . as the s h ift register se que ntial l y clos es eac h rea d sw itc h , th e ne ga tiv e stored ch arg e , w h ich is pr op or tiona l in amo u n t to the l i ght e x p o su r e from the corr espo nd i ng p hot o d io de, is rea dout ont o the vi d eo l i ne , qou t . t y pica l l y , an e x ter n a l charg e -inte g rat i ng am plifi e r senses the n e g a tive outp u t charge o n the vi deo li ne from each p hoto d i ode pi xel. t he shift register c ontin ues sca nni ng t he p hoto d io de s in se que nce, until th e last s h ift register sta ge is r each ed, at w h ic h time t h e fourth and l a st dumm y p i xel i s read out a n d end-of-sca n (eos) output is held h i gh for one cl ock c y c l e. t he ne xt start pulse ca n th en restart the shift register. 4 a m i se m i co nd uc t o r ? aug. 06, m-20603 -001 www.amis.com
AMIS-734256, amis-734512, amis-734024 data sheet 25 m- p itch wide a p ertu re s p ectr o sc o p ic photodi ode arr a y s figure 5: simplifie d circuit diagram of an hsn photodiode array t he diagram in f i gure 5 do es not incl ud e the capac itor ba nk and the ant i-b l oomi ng circu i try. 7.0 i/o pins besides the v ss and v dd s upply pins, there ar e nine functionally activ e i/o pins. only t w o c l ocks, clk and st art, are required for control lin g the timing of the s ensor's vi d eo r ead out. one a dditi ona l di gital input, a ddca p controls the bank of ca pacit ors as d escri b ed in the s e ctio n 6.0. t he digita l output, eos, marks the e n d of the li ne-sc a n . t he char ge output pin, qout , is ty pic a l l y conn ecte d to a charg e -inte g rat i ng ampl ifier, w h ich is b i ase d t o vbi a s (se e s e ction 8.0). f o r norma l a n ti-bl oomi ng oper ati on, the a b g re quir e s a 0.1f capac itor conn ected to vss and the abd i s also bias ed to vbias. each temperatur e di ode is op erate d w i t h a small constant curre n t, w h ich for w a r d biases its p n juncti on. b y measuri ng th e for w ar d- bias voltage, o n e can track t he silic on di e temper ature. th e temperatur e diodes may be disabled by c o nnecting their anodes to vs s. t hese i/os are lis ted w i t h their acrony m designat ors and function al d e sc riptio ns in t able 1. table 1: s y m bols and functions and i/o pins sy mbo l func tio n an d d escripti on v s s g r ou n d vdd +5.0v start start pulse: input to start the line scan clk clock pulse: inpu t to clock the shif t register addcap add capacitors: input that selects the bank of capa citors to increase charge capacit y eo s end of scan: out put from the shift register to indicate the completion of one line scan qout video charge out put: output f r om t he photodiodes p i xels abg anti-blooming ga te: self-biased gate for setting ant i - blooming level. requires 0.1- f connected to vss abd anti-blooming dr ain: bias for anti- blooming drain, set to vbias td1 temper ature diode 1: anode of te mperatu r e diode 1 td2 temper ature diode 2: anode of te mperatu r e diode 2 nc no connection 5 a m i se m i co nd uc t o r ? aug. 06, m-20603 -001 www.amis.com
AMIS-734256, amis-734512, amis-734024 data sheet 25 m- p itch wide a p ertu re s p ectr o sc o p ic photodi ode arr a y s 8.0 clock and voltage requirements t he clockin g re quir e ments are relativ e l y s i mp le. as it w a s i n di cate d i n f i g u r e 5 and t able 1, there are on l y t w o i nput s i g nals th at re quir e clocke d inp u ts. t h e y are c l k, the clock for the shift register, and st ar t , the shift registe r start pulse. t he timin g speci f ica tions a nd th e s y mbol definition for figure 6 are listed in t able 2. t he control clock am plit udes for i/os are compatible w i t h the 5v cm os dev ices. f i gure 6: timing diagram table 2: s y m bol definitions and timi ng specifications for timing di agram item sy mbo l min. ty p . max. units clock cy cle time to 1000 10000 ns clock high pulse w i dth tw h 900 ns clock low pulse w i dth tw l 100 ns clock duty c y cle 1 50 99 % data setup time tds 100 ns data hold time tdh 100 ns eos lo w - to -high dela y telh 400 ns eos high-to -lo w dela y tehl 400 ns signal delay time tsd 50 ns signal settling time tsh 900 ns signal settle to clock edge tsch 0 ns 6 a m i se m i co nd uc t o r ? aug. 06, m-20603 -001 www.amis.com
AMIS-734256, amis-734512, amis-734024 data sheet 25 m- p itch wide a p ertu re s p ectr o sc o p ic photodi ode arr a y s 9.0 recommended operating conditions t able 3 lists the recomme nd ed ope rating con d ition s . table 3: recom m ended operati ng conditions at 25 c parameters sy mbo l min. ty p . max. units power suppl y vdd 4.5 5.0 5.5 volts input clock pulse s high level (1 ) vih vdd ? 0.8 vdd vdd volts input clock pulse low level (1 ) v i l 0 . 0 0 . 0 0 . 8 v o l t s video charge out put exte rnal bias vbias vdd ? 0.5 vdd ? 0.5 vdd volts clock frequenc y fclk 0.1 1.0 mhz integration time (2 ) ti nt 0.26 (734 256) 0.52 (734 512) 1.03 (734 024) 11000 ( w / cap) ms notes: (1) applies to al l con t ro l-clo c k inpu ts. (2) inte grati on time i s spe c ifie d at room temperature su ch t hat the max i mum dark curren t cha r g e build up in each pix e l is less than 10 percen t of the minimum satu rati on charge . accordingly , i t may be a s l ong a s 11 seconds a t room temperature w i th th e added cap a ci tor s . long er in tegra t i o n time s may be a c hiev ed b y cooling the d e v i ce. an appr opria te clo c k freque ncy must b e ch ose n so tha t th e sh ift r egister com p lete s i t s op erati on w i thin the de sired i n tegra t ion tim e . 10.0 electro-optical characteristics t able 4 lists the electro- optic al char acteristi cs. table 4: electro- optical characte ristics at 25 c parameters sy mbo l min. ty p . max. units center -to-cente r spacing 25 m aperture w i d t h 2500 m pixel area a 6.25 x 1 0 -4 c m 2 f ill factor (1 ) ff 72 % quantum efficiency (1 )(2 ) q e 7 0 % responsivity (1 )(2 ) r 1.5 x 10 -4 c/j/cm 2 non-unifo rmit y of response (3 ) 2 + / - % saturation e x pos ure (2 ) esat 370 ( w /cap ) 130 ( w /o cap ) 430 ( w / cap ) 170 ( w /o cap ) nj/cm 2 saturation charg e (4 ) qs at 55 ( w /cap) 20 ( w /o cap ) 65 ( w /cap) 25 ( w /o cap ) pc average dark cur r ent (5 ) 0.2 pa spectral response peak 6 0 0 n m spectral response range (6 ) 180 - 100 0 nm notes: (1) fill fa ctor, quan tum effi ciency and resp onsiv ity are relate d by the equa tion r = (qel/hc) .qe . ff.a , w here qe i s the ch arge o f an ele c tron and h c /l is the en er gy of a photon at a giv en wav e length. re spon si v i ty is th erefo r e g i v en per pix e l. (2) at w a v e length of 5 75nm (y ellow - green) and w i th no w i ndow . (3) measured a t 50 per cent v s a t w i th a n in cande scent tung ste n lamp fil t ered w i th an s c ho tt kg-1 he at-ab s orbing filter. (4) satura tion charge speci f ied for a v i deo outpu t bi as o f 4 . 5v . (5) max dark lea k age 1.5 x av erage dark lea k age measu r ed w i th an inte grati on period o f 500ms a t 25 c. (6) from 250-1000 nm, re spon siv i ty 3 20 p e rcen t o f its pea k v a lue. 7 a m i se m i co nd uc t o r ? aug. 06, m-20603 -001 www.amis.com
AMIS-734256, amis-734512, amis-734024 data sheet 25 m- p itch wide a p ertu re s p ectr o sc o p ic photodi ode arr a y s 11.0 pack age dimensions f i gure 7 pr ovid es the pack age dimens ions. f i gure 7: p a ckage dimensions 8 a m i se m i co nd uc t o r ? aug. 06, m-20603 -001 www.amis.com
AMIS-734256, amis-734512, amis-734024 data sheet 25 m- p itch wide a p ertu re s p ectr o sc o p ic photodi ode arr a y s 12.0 company or product inquiries for more infor m ation abou t ami semiconductor, our techn o lo g y an d our prod uct, visit our w eb site at: http:// w w w . amis.com north americ a t e l: + 1 .208.23 3.469 0 f a x: + 1 .208.2 3 4 .679 5 europe t e l: + 32 (0) 55.33.22.1 1 f a x: + 32 (0) 55 .31.81.1 2 pr oducti on t e c hni cal d a ta - t h e i n for m a t i on contai ned i n t h i s doc u men t a ppl i e s t o a pr o d uct i n pr oduc ti on. am i semi c ond uctor an d it s su b s id ia rie s (?a mi s ?) ha v e m a de e v e r y e f f o rt to e n s u r e that the i n f o r m ati on i s accur a te an d r e l i abl e. h o w e v e r , the ch ar act e r i sti cs and sp eci f i c ati o ns o f the pr o d uct ar e s u bj ect to c h ang e w i tho u t n o ti ce and th e i n for m ati o n i s pr ov i ded ? a s is? w i thout w a r r anty of any ki nd ( e x p r e ss or i m pl i ed) . c u s t om er s ar e adv i s ed to obtai n th e l a t e st v e r s i on o f r e l e v ant i n for m a t i o n to v e r i f y that dat a b e ing r e lied on is th e mos t cur r ent an d co mple te. am is r e ser v es the r i g h t to di sconti n ue pr oduc ti on a nd ch ang e s peci f i c ati o ns an d pr i c es at any ti me and w i thout n o ti ce. pr oduc ts sol d by am is ar e c o v e r e d by the w a r r anty and pat e nt i n de mni f i c ati on pr ov i s ions a p p ear i n g i n i t s t e r m s o f sal e onl y . am i s m a kes no oth e r w a r r anty , ex pr ess or i m pl i e d, a n d di scl ai m s t h e w a rra n t ie s of no n i nf rin gem e n t, m e rcha n t a b ility , o r f i tn e s s for a par ti cul a r p u r pos e. am i se mi con duct o r ' s pr oduc ts ar e i n te nde d f o r use i n or di n a r y comm er ci al ap pl i c ati o ns. these pr od uc ts ar e n o t d e si g n ed, aut hor i z e d, or w a r r anted to be s u i t abl e f o r use i n l i fe- s upp or t sy stems or ot her cr i t i c al a p p l i c ati ons w her e mal f u n cti on may caus e p e r s onal i n j u r y . incl usi o n o f am is pr o d u cts i n su ch ap pl i c ati o ns i s un de r s tood to be ful l y at the custo m er ? s r i sk. a ppl i c ati ons r e q u i r i n g ex tend ed t e m per at ur e r a ng e, oper ati on i n un usu a l e n v i r onment a l co ndi t i o n s , or hi g h r e l ia b ility , such a s m ilita r y o r m e d i ca l life - su p p o r t, a r e specif ica lly not r e c o m m e n d ed w i thout addi ti onal pr ocessi ng by am is f o r suc h a p pl i c ati o ns. c o py r i g h t ? 20 06 am i se mi co nd uctor , i n c. 9 a m i se m i co nd uc t o r ? aug. 06, m-20603 -001 www.amis.com
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