APTM50DHM65T3G APTM50DHM65T3G ? rev 0 august, 2009 www.microsemi.com 1 ? 5 32 4 16 q4 cr3 3 13 r1 31 7 14 8 19 30 29 22 q1 18 cr2 23 15 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23? absolute maximum ratings these devices are sens itive to electrostatic discharge. prope r handling procedures should be followe d. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 500 v t c = 25c 51 i d continuous drain current t c = 80c 38 i dm pulsed drain current 270 a v gs gate - source voltage 30 v r dson drain - source on resistance 78 m p d maximum power dissipation t c = 25c 390 w i ar avalanche current (repetitive and non repetitive) 42 a v dss = 500v r dson = 65m typ @ tj = 25c i d = 51a @ tc = 25c application ? welding converters ? switched mode power supplies ? switched reluctance motor drives features ? power mos 8? mosfets - low r dson - low input and miller capacitance - low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design ? internal thermistor fo r temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant asymmetrical - bridge mosfet power module
APTM50DHM65T3G APTM50DHM65T3G ? rev 0 august, 2009 www.microsemi.com 2 ? 5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i dss zero gate voltage drain current v ds = 500v v gs = 0v t j = 125c 1000 a r ds(on) drain ? source on resistance v gs = 10v, i d = 42a 65 78 m v gs(th) gate threshold voltage v gs = v ds , i d = 2.5ma 3 4 5 v i gss gate ? source leakage current v gs = 30 v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 10800 c oss output capacitance 1164 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 148 pf q g total gate charge 340 q gs gate ? source charge 75 q gd gate ? drain charge v gs = 10v v bus = 250v i d = 42a 155 nc t d(on) turn-on delay time 60 t r rise time 70 t d(off) turn-off delay time 155 t f fall time resistive switching @ 25c v gs = 15v v bus = 333v i d = 42a r g = 2.2 50 ns diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f dc forward current t c = 80c 60 a i f = 60a 1.7 2.3 i f = 120a 2 v f diode forward voltage i f = 60a t j = 125c 1.4 v t j = 25c 70 t rr reverse recovery time t j = 125c 140 ns t j = 25c 100 q rr reverse recovery charge i f = 60a v r = 400v di/dt = 200a/s t j = 125c 690 nc
APTM50DHM65T3G APTM50DHM65T3G ? rev 0 august, 2009 www.microsemi.com 3 ? 5 thermal and package characteristics symbol characteristic min typ max unit mosfet 0.32 r thjc junction to case thermal resistance diode 0.85 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp3 package outline (dimensions in mm) 17 12 28 1 see application note apt0501 - mounting in structions for sp4 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTM50DHM65T3G APTM50DHM65T3G ? rev 0 august, 2009 www.microsemi.com 4 ? 5 typical mosfet performance curve low voltage output characteristics t j =25c t j =125c 0 50 100 150 200 250 0 5 10 15 20 v ds , drain to source voltage (v) i d , drain current (a) v gs =10v low voltage output characteristics 5.5v 6v 6.5v 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 v ds , drain to source voltage (v) i d , drain current (a) v gs =7,8 &10v t j =125c normalized r dson vs. temperature 0.5 1 1.5 2 2.5 25 50 75 100 125 150 t j , junction temperature (c) v gs =10v i d =42a r dson , drain to source on resistance ciss crss coss 10 100 1000 10000 100000 0 50 100 150 200 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage transfert characteristics t j =25c t j =125c 0 25 50 75 100 125 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle gate charge vs gate to source v ds =100v v ds =250v v ds =400v 0 2 4 6 8 10 12 0 60 120 180 240 300 360 gate charge (nc) v gs , gate to source voltage i d =42a t j =25c t j =25c t j =125c 0 25 50 75 100 125 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source to drain voltage (v) i sd , reverse drain current (a) drain current vs source to drain voltage 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration
APTM50DHM65T3G APTM50DHM65T3G ? rev 0 august, 2009 www.microsemi.com 5 ? 5 typical diode performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration t j =25c t j =125c 0 40 80 120 160 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 30 a 60 a 120 a 0 5 10 15 20 25 30 35 40 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =400v trr vs. current rate of charge 30 a 60 a 120 a 50 75 100 125 150 175 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =400v q rr vs. current rate charge 30 a 60 a 120 a 0.0 0.5 1.0 1.5 2.0 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =400v capacitance vs. reverse voltage 0 100 200 300 400 500 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) 0 20 40 60 80 100 25 50 75 100 125 150 175 case temperature (c) i f (a) dc forward current vs. case temp. duty cycle = 0.5 t j =175c microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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