feb.1999 mitsubishi semiconductor triac ? BCR8PM-14 medium power use insulated type, planar passivation type application switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as tv sets stereo refrigerator washing machine infrared kotatsu carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications BCR8PM-14 i t (rms) ........................................................................ 8a v drm ....................................................................... 700v i fgt ! , i rgt ! , i rgt # .......................... 30ma (20ma) ] 5 v iso ........................................................................ 1500v ul recognized: file no. e80276 ] 1. gate open. symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage conditions commercial frequency, sine full wave 360 conduction, t c =88 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value t a =25 c, ac 1 minute, t 1 t 2 g terminal to case unit a a a 2 s w w v a c c g v ratings 8 80 26 5 0.5 10 2 C40 ~ +125 C40 ~ +125 2.0 1500 symbol v drm v dsm parameter repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 voltage class unit v v maximum ratings 14 700 840 outline drawing dimensions in mm to-220f type name voltage class ] measurement point of case temperature f 3.2 0.2 1.3 max 0.8 2.54 13.5 min 3.6 5.0 1.2 8.5 10.5 max 5.2 4.5 17 2.54 2.8 0.5 2.6 a a a t 1 terminal t 2 terminal gate terminal ]
feb.1999 10 0 23 5710 1 40 20 23 5710 2 44 60 80 100 30 10 50 70 90 0 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? t j = 125? t j = 25? maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) mitsubishi semiconductor triac ? BCR8PM-14 medium power use insulated type, planar passivation type ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below. ] 4. the contact thermal resistance r th (c-f) in case of greasing is 0.5 c/w. ] 5. high sensitivity (i gt 20ma) is also available. (i gt item ) test conditions voltage class v drm (v) min. commutating voltage and current waveforms (inductive load) (dv/dt) c symbol unit v/ m s 1. junction temperature t j =125 c 2. rate of decay of on-state commutat- ing current (di/dt) c =C4.0a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ] 2 gate trigger current ] 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =12a, instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to case ] 4 unit ma v v v v ma ma ma v c/w v/ m s typ. ! @ # ! @ # electrical characteristics limits min. 0.2 ] 3 max. 2.0 1.6 1.5 1.5 1.5 30 ] 5 30 ] 5 30 ] 5 3.7 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c performance curves r l10 14 700
feb.1999 23 10 ? 5710 0 23 5710 1 23 5710 2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4.0 0 23 10 2 5710 3 23 5 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 ? v gd = 0.2v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i i rgt i, i rgt iii 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 typical example 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 i rgt i , i fgt i i rgt iii typical example maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) gate trigger voltage vs. junction temperature junction temperature ( c) maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) 10 3 10 ? 10 3 10 4 10 2 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 23 57 23 57 10 2 10 5 23 57 23 57 no fins 16 12 6 4 2 14 10 8 0 16 0 24 8 6 101214 360 conduction resistive, inductive loads gate characteristics 100 (%) gate trigger current (t j = t c) gate trigger current (t j = 25 c) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 c ) mitsubishi semiconductor triac ? BCR8PM-14 medium power use insulated type, planar passivation type
feb.1999 laching current vs. junction temperature laching current (ma) junction temperature (?) allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature (?) 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 10 1 typical example 160 120 100 60 20 0 16 0 2 6 10 14 40 80 140 4812 60 60 t2.3 120 120 t2.3 100 100 t2.3 curves apply regardless of conduction angle resistive, inductive loads natural convection all fins are black painted aluminum and greased 160 120 100 60 20 0 16 0 2 6 10 14 40 80 140 4812 curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable case temperature vs. rms on-state current case temperature (?) rms on-state current (a) 160 120 100 60 20 0 3.2 0 0.4 1.2 2.0 2.8 40 80 140 0.8 1.6 2.4 natural convection no fins curves apply regardless of conduction angle resistive, inductive loads holding current vs. junction temperature junction temperature (?) 160 ?0 0 40 80 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t 2 + , g e typical example t 2 + , g + t 2 e , g e y t typical example distribution 100 (%) holding current ( t j = t c ) holding current ( t j = 25 ? ) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR8PM-14 medium power use insulated type, planar passivation type
feb.1999 160 100 80 40 20 0 140 40 ?0 ?0 ?0 0 20 60 80 140 100120 60 120 typical example breakover voltage vs. junction temperature junction temperature (?) commutation characteristics critical rate of rise of off-state commutating voltage (v/?) rate of decay of on-state commutating current (a /ms) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = xv/? ) breakover voltage ( dv/dt = 1v/? ) gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i typical example 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 typical example t j = 125? i quadrant iii quadrant 10 1 23 10 0 5710 1 23 5710 2 23 5710 3 3 2 10 2 7 5 3 2 7 5 7 5 3 2 10 0 typical example t j = 125? i t = 4a t = 500? v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value voltage waveform current waveform v d t (dv/dt) c i t t t (di/dt) c 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR8PM-14 medium power use insulated type, planar passivation type 6 w 6 w 6 w 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
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