feb.1999 900 30 1 3 25 C55 ~ +150 C55 ~ +150 2000 2 v v a a w c c v rms g v dss v gss i d i dm p d t ch t stg v iso v dss ................................................................................ 900v r ds (on) (max) .............................................................. 15.0 w i d ............................................................................................ 1a v iso ................................................................................ 2000v FS1KM-18A outline drawing dimensions in mm to-220fn mitsubishi nch power mosfet FS1KM-18A high-speed switching use application smps, dc-dc converter, battery charger, power supply of printer, copier, hdd, fdd, tv, vcr, per- sonal computer etc. drain-source voltage gate-source voltage drain current drain current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight v gs = 0v v ds = 0v ac for 1minute, terminal to case typical value maximum ratings (tc = 25c) parameter conditions symbol ratings unit w q e 15 ?0.3 14 ?0.5 10 ?0.3 2.8 ?0.2 f 3.2 ?0.2 1.1 ?0.2 1.1 ?0.2 0.75 ?0.15 2.54 ?0.25 2.54 ?0.25 2.6 ?0.2 4.5 ?0.2 0.75 ?0.15 3 ?0.3 3.6 ?0.3 6.5 ?0.3 123 q gate w drain e source
feb.1999 v v m a ma v w v s pf pf pf ns ns ns ns v c/w 900 30 2 0.6 3 11.5 5.75 1.0 270 26 4 9 12 35 30 1.0 10 1 4 15.0 7.50 1.5 5.0 i d = 1ma, v gs = 0v i gs = 100 m a, v ds = 0v v gs = 25v, v ds = 0v v ds = 900v, v gs = 0v i d = 1ma, v ds = 10v i d = 0.5a, v gs = 10v i d = 0.5a, v gs = 10v i d = 0.5a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 0.5a, v gs = 10v, r gen = r gs = 50 w i s = 0.5a, v gs = 0v channel to case mitsubishi nch power mosfet FS1KM-18A high-speed switching use v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 0 210 1 357 2 10 2 357 2 10 3 357 3 2 10 1 5 7 tw = 100 m s t c = 25? single pulse 10ms 100ms 1ms dc 0 0.4 0.8 1.2 1.6 2.0 0 1020304050 p d = 25w v ge = 20v t c = 25? pulse test 10v 5v 4v 4.5v 0 10 20 30 40 50 0 200 50 100 150 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 v ge = 20v @ t c = 25? pulse test 10v 5v 4.5v 4v power dissipation derating curve case temperature t c (?) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) electrical characteristics (tch = 25c) drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. performance curves
feb.1999 mitsubishi nch power mosfet FS1KM-18A high-speed switching use 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20 t c = 25? v ds = 50v pulse test 10 ? 10 0 23 57 10 1 23 57 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 t c = 25? 75? 125? v ds = 10v pulse test 10 0 10 1 2 3 5 7 10 2 2 3 5 7 210 0 357 2 10 1 357 2 10 2 357 10 3 5 7 2 3 2 ciss coss crss tch = 25? f = 1mh z v gs = 0v 10 ? 10 0 23 57 10 1 23 57 10 1 3 5 7 10 2 2 3 5 7 2 3 t d(off) t d(on) t r tch = 25? v dd = 200v v gs = 10v r gen = r gs = 50 w t f 0 10 20 30 40 50 0 4 8 12 16 20 i d = 2a t c = 25? pulse test 1a 0.5a 0 4 8 12 16 20 10 ? 210 ? 357 2 10 0 357 2 10 1 357 v gs = 10v t c = 25? pulse test 20v on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( w ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs.drain current (typical) drain current i d (a) forward transfer admittance y fs (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns)
feb.1999 mitsubishi nch power mosfet FS1KM-18A high-speed switching use 10 ? 10 0 2 3 5 7 10 1 2 3 5 7 ?0 0 50 100 150 v gs = 10v i d = 1/2i d pulse test 0 1.0 2.0 3.0 4.0 5.0 ?0 0 50 100 150 v ds = 10v i d = 1ma 0.4 0.6 0.8 1.0 1.2 1.4 ?0 0 50 100 150 v gs = 0v i d = 1ma 0 4 8 12 16 20 0 4 8 12 16 20 v ds = 250v 400v 600v tch = 25? i d = 1a 0 1 2 3 4 5 0 0.8 1.6 2.4 3.2 4.0 t c = 125? 75? 25? v gs = 0v pulse test 10 ? 10 ? 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 ? 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 ? 10 ? 10 ? single pulse 0.2 0.1 0.05 0.02 0.01 d = 1.0 0.5 p dm tw d = t tw t gate-source voltage vs.gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch (?) drain-source on-state resistance r ds (on) (t?) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch (?) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch?) (?/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25?) channel temperature tch (?) drain-source breakdown voltage v (br) dss (t?) drain-source breakdown voltage v (br) dss (25?)
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