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h7n0401ld, H7N0401LS, h7n0401lm silicon n channel mos fet high speed power switching ade-208-1527c (z) 4th. edition may 2002 features ? low on-resistance r ds(on) = 3.1 m ? typ. ? 4.5 v gate drive devices ? high speed switching outline 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4 ldpak d g s h7n0401ld H7N0401LS 1 2 3 4 h7n0401lm
h7n0401ld, H7N0401LS, h7n0401lm rev.3, may 2002, page 2 of 11 absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 40 v gate to source voltage v gss 20 v drain current i d 95 a drain peak current i d (pulse) note 1 380 a body-drain diode reverse drain current i dr 95 a avalanche current i ap note 3 70 a avalanche energy e ar note 3 650 mj channel dissipation pch note 2 100 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. value at tch = 25 c, rg 50 ?
h7n0401ld, H7N0401LS, h7n0401lm rev.3, may 2002, page 3 of 11 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 40 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ??10 av ds = 40 v, v gs = 0 gate to source leak current i gss ??0.1 av gs = 20 v, v ds = 0 gate to source cutoff voltage v gs(off) 1.5 ? 2.5 v v ds = 10 v, i d = 1 ma note 1 forward transfer admittance |y fs | 60 100 ? s i d = 47.5 a, v ds = 10 v note 1 static drain to source on state resistance r ds(on) ?3.14.2m ? i d = 47.5 a, v gs = 10 v note 1 static drain to source on state resistance r ds(on) ?4.87.0m ? i d = 47.5 a, v gs =4.5 v note 1 input capacitance ciss ? 9300 ? pf v ds = 10 v output capacitance coss ? 1300 ? pf v gs = 0 reverse transfer capacitance crss ? 670 ? pf f = 1 mhz total gate charge qg ? 160 ? nc v dd = 25 v gate to source charge qgs ? 36 ? nc v gs = 10 v gate to drain charge qgd ? 40 ? nc i d = 95 a turn-on delay time td(on) ? 45 ? ns v gs = 10v rise time tr ? 270 ? ns i d = 47.5 a turn-off delay time td(off) ? 130 ? ns r l = 0.63 ? fall time tf ? 85 ? ns r g = 4.7 ? body?drain diode forward voltage v df ?0.95?v i f = 95 a, v gs = 0 body?drain diode reverse recovery time trr ? 50 ? ns i f = 95 a, v gs = 0 dif/dt = 100a/s notes: 1. pulse test
h7n0401ld, H7N0401LS, h7n0401lm rev.3, may 2002, page 4 of 11 main characteristics 160 120 80 0 50 100 150 200 0.1 0.3 1 3 10 30 100 200 160 120 80 0 2 46810 1000 300 100 30 10 1 0.3 0.1 3 ta = 25 c 10 s 100 s 1 ms dc operation (tc = 25 c) 3.5 v 40 6.0 v 4.5 v 3 v 200 160 120 80 40 0 12345 tc = ?25 c 25 c 75 c v = 10 v pulse test ds pulse test v = 10 v gs channel dissipation pch (w) case temperature tc ( c) power vs. temperature derating drain to source voltage v ds (v) drain current i d (a) maximum safe operation area gate to source voltage v gs (v) typical transfer characteristics drain current i d (a) drain to source voltage v ds (v) drain current i d (a) typical output characteristics operation in this area is limited by r ds(on) 40 4.0 v pw = 10 ms (1 shot)
h7n0401ld, H7N0401LS, h7n0401lm rev.3, may 2002, page 5 of 11 0 48 12 16 20 0.5 0.4 0.3 0.2 0.1 pulse test i = 50 a d 20 a 10 a 1 30 100 3 100 0.3 1 0.1 10 1000 10 3 30 300 v = 4.5 v gs 10 v pulse test drain current i d (a) drain to source on state resistance r ds(on) (m ? ) drain to source on state resistance r ds(on) (m ? ) static drain to source on state resistance vs. drain current case temperature tc ( c) static drain to source on state resistance vs. temperature drain current i d (a) forward transfer admittance vs. drain current forward transfer admittance |yfs| (s) gate to source voltage v gs (v) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage v ds(on) (v) 10 8 6 4 2 ?50 0 50 100 150 200 0 v = 10 v gs 4.5 v 10, 20, 50 a pulse test 10, 20, 50 a 1 3 10 30 100 100 1000 300 30 10 3 1 tc = ?25 c 75 c 25 c 300 1000 v = 10 v pulse test ds
h7n0401ld, H7N0401LS, h7n0401lm rev.3, may 2002, page 6 of 11 1 3 10 30 100 01020304050 1000 10000 3000 1000 100 200 20 10 0.1 0.3 3 10 100 1000 500 100 200 20 50 10 300 30 1 100 v = 0 f = 1 mhz gs ciss coss crss 500 50 v = 10 v, v = 30 v pw = 5 s, duty < 1 % rg = 4.7 ? gs dd r t d(on) t d(off) t t f 30000 reverse drain current i dr (a) reverse recovery time trr (ns) body-drain diode reverse recovery time capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics switching time t (ns) drain current i d (a) switching characteristics di / dt = 100 a / s v = 0, ta = 25 c gs 100 80 60 40 20 0 20 16 12 8 4 40 80 120 160 200 0 i = 95 a d v gs v ds v = 10 v 25 v 40 v ds v = 40 v 25 v 10 v ds
h7n0401ld, H7N0401LS, h7n0401lm rev.3, may 2002, page 7 of 11 0 0.4 0.8 1.2 1.6 2.0 pulse test v = 0, ? 5 v gs 10 v 5 v 200 160 120 80 40 d. u. t rg i monitor ap v monitor ds v dd 50 w vin 15 v 0 i d v ds i ap v (br)dss l v dd e = l i 2 1 v v ? v ar ap dss dss dd 2 800 640 480 320 160 25 50 75 100 125 150 0 i = 65 a v = 25 v duty < 0.1 % rg > 50 ap dd w source to drain voltage v sd (v) reverse drain current i dr (a) reverse drain current vs. source to drain voltage channel temperature tch ( c) repetitive avalanche energy e ar (mj) maximum avalanche energy vs. channel temperature derating avalanche test circuit avalanche waveform
h7n0401ld, H7N0401LS, h7n0401lm rev.3, may 2002, page 8 of 11 tr td(on) vin 90% 90% 10% 10% vout td(off) 90% 10% t f switching time test circuit waveform pulse width pw (s) normalized transient thermal impedance g s (t) normalized transient thermal impedance vs. pulse width 3 1 0.3 0.1 0.03 0.01 10 100 1 m 10 m 100 m 1 10 vin monitor d.u.t. vin 10 v r l v = 30 v ds vout monitor rg tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.01 dm p pw t d = pw t ch - c(t) = s (t) ? ch - c ch - c = 1.25 c/ w, tc = 25 c qgq q
h7n0401ld, H7N0401LS, h7n0401lm rev.3, may 2002, page 9 of 11 package dimensions hitachi code jedec jeita mass (reference value) ldpak (l) ? ? 1.4 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ? 0.1 1.2 0.2 4.44 0.2 1.3 0.15 2.59 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ? 0.5 (1.4) 1.27 0.2 as of january, 2002 unit: mm
h7n0401ld, H7N0401LS, h7n0401lm rev.3, may 2002, page 10 of 11 hitachi code jedec jeita mass (reference value) ldpak (s)-(1) ? ? 1.3 g 10.2 0.3 1.27 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.2 0.2 3.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2002 unit: mm hitachi code jedec jeita mass (reference value) ldpak (s)-(2) ? ? 1.35 g 10.2 0.3 1.27 0.2 (2.3) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.2 0.1 + 0.2 ? 0.1 0.4 0.1 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.2 0.2 5.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2002 unit: mm
h7n0401ld, H7N0401LS, h7n0401lm rev.3, may 2002, page 11 of 11 disclaimer 1. hitachi neither warrants nor grants licenses of any rights of hitachi?s or any third party?s patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party?s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi?s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi?s sales office for any questions regarding this document or hitachi semiconductor products. sales offices hitachi, ltd. semiconductor & integrated circuits nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2002. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00 singapore 049318 tel : <65>-6538-6533/6538-8577 fax : <65>-6538-6933/6538-3877 url : http://semiconductor.hitachi.com.sg url http://www.hitachisemiconductor.com/ hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road hung-kuo building taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel : <852>-2735-9218 fax : <852>-2730-0281 url : http://semiconductor.hitachi.com.hk hitachi europe gmbh electronic components group dornacher stra?e 3 d-85622 feldkirchen postfach 201, d-85619 feldkirchen germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi europe ltd. electronic components group whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585200 hitachi semiconductor (america) inc. 179 east tasman drive san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 6.0

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