document number: 93050 for technical questions within your region, please contact one of the following: www.vishay.com revision: 10-may-11 indmodules@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 single phase fast recovery bridge (power modules), 60 a SA60BA60 vishay semiconductors features ? fast recovery time characteristic ? electrically isolated base plate ? simplified mechanical designs, rapid assembly ? ul pending ? excellent power/volume ratio ? compliant to rohs directive 2002/95/ec ? designed and qualified for in dustrial and consumer level description the semiconductor in the sot-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. electrical specifications product summary i t(av) 60 a type modules - bridge, fast sot-227 major ratings and characteristics symbol characteristics values units i o 60 a t c 59 c i fsm 50 hz 300 a 60 hz 310 i 2 t 50 hz 442 a 2 s 60 hz 402 v rrm 600 v t j - 55 to 150 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j maximum SA60BA60 60 600 700 5
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93050 2 indmodules@vishay.com revision: 10-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 SA60BA60 vishay semiconductors single phase fast recovery bridge (power modules), 60 a forward conduction parameter symbol test conditions values units maximum dc output current at case temperature i o resistive or inductive load 60 a 59 c maximum peak, one-cycle non-repetitive forward current i fsm t = 10 ms no voltage reapplied initial t j = t j maximum 300 a t = 8.3 ms 310 t = 10 ms 100 % v rrm reapplied 250 t = 8.3 ms 260 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 442 a 2 s t = 8.3 ms 402 t = 10 ms 100 % v rrm reapplied 313 t = 8.3 ms 284 maximum i 2 ? t for fusing i 2 ? ti 2 t for time t x = i 2 ? t x ? t x ?? 0.1 ? t x ? 10 ms, v rrm = 0 v 4.4 ka 2 ? s value of threshold voltage v f(to) t j maximum 0.914 v forward slope resistance r t 10.5 m ? maximum forward voltage drop v fm t j = 25 c, i fm = 30 a pk t p = 400 s 1.33 v t j = t j maximum, i fm = 30 a pk 1.23 rms isolation voltage base plate v ins f = 50 hz, t = 1 s 3000 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr t j = 25 c, i f = 20 a, v r = 30 v, di f /dt = 100 a/s 160 ns t j = 125 c, i f = 20 a, v r = 30 v, di f /dt = 100 a/s 250 reverse recovery current i rr t j = 25 c, i f = 20 a, v r = 30 v, di f /dt = 100 a/s 10 a t j = 125 c, i f = 20 a, v r = 30 v, di f /dt = 100 a/s 15 reverse recovery charge q rr t j = 25 c, i f = 20 a, v r = 30 v, di f /dt = 100 a/s 1.20 nc t j = 125 c, i f = 20 a, v r = 30 v, di f /dt = 100 a/s 2.90 snap factor, typical s t j = 25 c 0.6 - thermal and mechanical specifications parameter symbol test co nditions values units junction and storage temperature range t j , t stg - 55 to 150 c maximum thermal resistance junction to ca se per bridge r thjc 0.30 c/w typical thermal resistance, case to heatsink per module r thcs mounting surface, smooth, flat and greased 0.05 approximate weight 30 g mounting torque 10 % bri dge to heatsink 1.3 nm case style sot-227 i fm t rr di r dt i rm(rec) q rr t
document number: 93050 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 10-may-11 indmodules@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 SA60BA60 single phase fast recovery bridge (power modules), 60 a vishay semiconductors fig. 1 - typical forward voltage drop characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - maximum thermal impedance z thjc characteristics (per leg) forward voltage drop - v f (v) instantaneous forward current - i f (a) 1 10 100 1000 0123456 7 t = 150?c t = 25?c j j average forward current (a) maximum allowable case temperature (c) 40 50 60 70 80 90 100 110 120 130 140 150 0 10203040506070 180? (rect) 180? (sine) average power loss ( watts ) average forward current - i f(av) (a) 0 20 40 60 0 1 00 1 20 1 40 1 60 1 0 2 00 2 20 0 102030405060 10 (sine) 10 (rect) t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 0 01 01 1 10 000001 00001 0001 001 01 1 single pulse (thermal resistance) d = 050 d = 020 d = 010 d = 005 d = 002 d = 001 2 t 1 t p dm otes: 1 duty factor d = t1/ t2 2 peak t = pdm x zthjc tc
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93050 4 indmodules@vishay.com revision: 10-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 SA60BA60 vishay semiconductors single phase fast recovery bridge (power modules), 60 a fig. 5 - recovery time characteristics, t j = 25 c fig. 6 - recovery time characteristics, t j = 150 c fig. 7 - recovery charge characteristics, t j = 25 c fig. 8 - recovery charge characteristics, t j = 150 c fig. 9 - recovery current characteristics, t j = 25 c fig. 10 - recovery current characteristics, t j = 150 c rate of fall of forward current - di/ dt (a/ s) maximum reverse recovery time - t rr (s) 0 0.05 0.1 0.15 0.2 0 200 400 600 800 1000 1 a 5 a 10 a 20 a i fm = 30 a tj = 25 ?c rate of fall of forward current - di/ dt (a/ s) maximum reverse recovery time - t rr (s) 0 0.1 0.2 0.3 0.4 0.5 0 200 400 600 800 1000 1 a 5 a 10 a 20 a ifm = 30 a tj = 150 ?c rate of fall of forward current - di/ dt (a/ s) maximum reverse recovery current - i rr (a) 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 0 200 400 600 800 1000 1 a 5 a 10 a 20 a ifm = 30 a tj = 25 ?c rate of fall of forward current - di/ dt (a/ s) maximum reverse recovery current - i rr (a) 0 20 40 60 80 100 0 200 400 600 800 1000 1 a 5 a 10 a 20 a ifm = 30 a tj = 150 ? rate of fall of forward current - di/ dt (a/ s) maximum reverse recovery charge - q rr ( c) 0 0.5 1 1.5 2 2.5 3 3.5 4 0 200 400 600 800 1000 1 a 5 a 10 a 20 a ifm = 30 a tj = 25 ?c rate of fall of forward current - di/ dt (a/ s) maximum reverse recovery charge - q rr ( c) 0 1 2 3 4 5 6 7 8 9 10 0 200 400 600 800 1000 1 a 5 a 10 a 20 a ifm = 30 a tj = 150 ?c
document number: 93050 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 10-may-11 indmodules@vishay.com 5 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 SA60BA60 single phase fast recovery bridge (power modules), 60 a vishay semiconductors fig. 11 - reverse recovery parameter test circuit fig. 12 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93050 6 indmodules@vishay.com revision: 10-may-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 SA60BA60 vishay semiconductors single phase fast recovery bridge (power modules), 60 a ordering information table circuit configuration circuit circuit configuration code circuit drawing single phase bridge b links to related documents dimensions www.vishay.com/doc?95036 1 - s = fast recovery diode 2 - a = present silicon generation 3 - current rating (60 = 60 a) 6 - voltage rating (60 = 600 v) 4 - circuit configuration: b = single phase bridge 5 - package indicator: a = sot-227, standard insulated base device code 5 1 3 2 4 6 s a 60 b a 60 + - ~ 2 4 1 3
document number: 95036 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 28-aug-07 1 sot-227 outline dimensions vishay semiconductors dimensions in millimeters (inches) notes ? dimensioning and toleranc ing per ansi y14.5m-1982 ? controlling dime nsion: millimeter 38.30 (1.508) 37.80 (1.488) -a- 4 12 3 12.50 (0.492) 7.50 (0.295) ? 4.40 (0.173) ? 4.20 (0.165) 30.20 (1.189) 29.80 (1.173) 15.00 (0.590) 6.25 (0.246) 25.70 (1.012) 25.20 (0.992) -b- r full chamfer 2.00 (0.079) x 45 2.10 (0.082) 1.90 (0.075) 8.10 (0.319) 7.70 (0.303) 4 x 2.10 (0.082) 1.90 (0.075) -c- 0.12 (0.005) 12.30 (0.484) 11.80 (0.464) mmm 0.25 (0.010) ca b 4 x m4 nuts
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