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? switching regulators ? switching converters ? -20v/-3a, r ds(on) =50m ? (typ.) @ v gs =-4.5v r ds(on) =70m ? (typ.) @ v gs =-2.5v ? ? ? ? ? super high dense cell design ? ? ? ? ? reliable and rugged ? ? ? ? ? lead free available (rohs compliant) apm2070p handling code tem p. range package code package code d : s o t -89 operating junction tem p. range c : -55 to 150c handling code tu : tube tr : tape & reel lead free code l : lead free device blank : original device apm2070p d: apm2070 xxxxx xxxxx - date code lead free code p-channel mosfet top view of sot-89 g d s g s d (2) (3) (1) note: anpec lead-free products contain molding compounds/die attach materials and 100% matte in plate termina- tion finish; which are fully compliant with rohs and compatible with both snpb and lead-free soldiering operations. anpec lead-free products meet or exceed the lead-free requirements of ipc/jedec j std-020c for msl classifica- tion at lead-free peak reflow temperature.
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(t a = 25 c unless otherwise noted)
!" (t a = 25 c unless otherwise noted) symbol parameter rating unit v dss drain-source voltage -20 v gss gate-source voltage 12 v i d * continuous drain current -3 i dm * 300 s pulsed drain current v gs =-4.5v -12 a i s * diode continuous forward current -1.5 a t j maximum junction temperature 150 t stg storage temperature range -55 to 150 c t a =25 c 1.47 p d * power dissipation for single operation t a =100 c 0.58 w r ja * thermal resistance-junction to ambient 85 c/w note: *surface mounted on 1in 2 pad area, t 10sec. apm2070pd symbol parameter test condition min. typ. max. unit static characteristics bv dss drain-source breakdown voltage v gs =0v, i ds =-250 a -20 v v ds =-16v, v gs =0v -1 i dss zero gate voltage drain current t j =85 c -30 a v gs(th) gate threshold voltage v ds =v gs , i ds =-250 a -0.6 -0.75 -1 v i gss gate leakage current v gs =12v, v ds =0v 100 na v gs =-4.5v, i ds =-3a 50 70 r ds(on) a drain-source on-state resistance v gs =-2.5v, i ds =-1.5a 70 100 m ? v sd a diode forward voltage i sd =-1a , v gs =0v -0.7 -1.3 v gate charge characteristics b q g total gate charge 17.4 23 q gs gate-source charge 2.7 q gd gate-drain charge v ds =-10v, v gs =-4.5v, i ds =-3a 3.8 nc
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#! $% (t a = 25 c unless otherwise noted) apm2070pd symbol parameter test condition min. typ. max. unit dynamic characteristics b r g gate resistance v gs =0v,v ds =0v,f=1mhz 13 ? c iss input capacitance 1120 c oss output capacitance 295 c rss reverse transfer capacitance v gs =0v, v ds =-15v, frequency=1.0mhz 230 pf t d(on) turn-on delay time 12 21 t r turn-on rise time 25 42 t d(off) turn-off delay time 52 85 t f turn-off fall time v dd =-10v, r l =10 ? , i ds =-1a, v gen =-4.5v, r g =6 ? 18 32 ns notes: a : pulse test ; pulse width 300 s, duty cycle 2%. b : guaranteed by design, not subject to production testing.
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, 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r ja : 85 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 &'
!" power dissipation p tot - power (w) t j - junction temperature ( c) drain current t j - junction temperature -i d - drain current (a) thermal transient impedance normalized transient thermal resistence square wave pulse duration (sec) safe operation area -v ds - drain - source voltage (v) -i d - drain current (a) 0 20406080100120140160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t a =25 o c 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t a =25 o c,v g =-4.5v 0.01 0.1 1 10 100 0.01 0.1 1 10 50 100ms rds(on) limit 300 s t a =25 o c 1s 1ms 10ms dc
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% -v ds - drain - source voltage (v) -i d - drain current (a) output characteristics r ds(on) - on - resistance (m ? ) drain-source on resistance -i d - drain current (a) transfer characteristics -v gs - gate - source voltage (v) -i d - drain current (a) t j - junction temperature ( c) gate threshold voltage normalized threshold voltage &'
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#! $% 0246810 0 2 4 6 8 10 12 -1.5v -2v v gs =-3,-4,-5,-6,-7,-8,-9,-10v 024681012 30 40 50 60 70 80 90 100 v gs =-2.5v v gs =-4.5v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds =-250 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 t j =125 o c t j =25 o c t j =-55 o c
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- drain-source on resistance normalized on resistance t j - junction temperature ( c) -v sd - source - drain voltage (v) source-drain diode forward -i s - source current (a) -v ds - drain-source voltage (v) c - capacitance (pf) capacitance gate charge q g - gate charge (nc) -v gs - gate-source voltage (v) &'
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#! $% -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 r on @t j =25 o c: 50m ? v gs = -4.5v i ds = -3a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1 10 t j =150 o c t j =25 o c 0 4 8 12 16 20 0 0 400 800 1200 1600 2000 frequency=1mhz crss coss ciss 0 4 8 12 16 20 0 1 2 3 4 5 v ds = -10v i d = -3a
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d d1 e b1 e1 b 12 3 l h e c a a a sot-89 (reference eiaj ed-7500a reg stration sc-62) millimeters inches dim min. max. min. max. a 1.40 1.60 0.055 0.063 b 0.40 0.56 0.016 0.022 b1 0.35 0.48 0.014 0.019 c 0.35 0.44 0.014 0.017 d 4.40 4.60 0.173 0.181 d1 1.35 1.83 0.053 0.072 e 1.50 bsc 0.059 bsc e1 3.00 bsc 0.118 bsc e 2.29 2.60 0.090 0.102 h 3.75 4.25 0.148 0.167 l 0.80 1.20 0.031 0.047 10 10
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/ t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p "'
( terminal material solder-plated copper (solder material : 90/10 or 63/37 snpb), 100%sn lead solderability meets eia specification rsi86-91, ansi/j-std-002 category 3. )
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profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat temperature min (tsmin) temperature max (tsmax) time (min to max) (ts) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: temperature (t l ) time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak/classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10-30 seconds 20-40 seconds ramp-down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
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0 test item method description solderability mil-std-883d-2003 245 c, 5 sec holt mil-std-883d-1005.7 1000 hrs bias @125 c pct jesd-22-b,a102 168 hrs, 100 % rh, 121 c tst mil-std-883d-1011.9 -65 c~150 c, 200 cycles t ao e w po p ko bo d1 d f p1 '

table 2. pb-free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350-2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb entectic process ? package peak reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 <2.5 mm 240 +0/-5 c 225 +0/-5 c 2.5 mm 225 +0/-5 c 225 +0/-5 c !
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!$ application carrier width cover tape width devices per reel sot-89 12 9.3 1000 application a b c j t1 t2 w p e 178 1 70 2 13.5 0.15 3 0.15 14 2 1.3 0.3 12 + 0.3 12 - 0.1 8 0.1 1.75 0.1 f d d1 po p1 ao bo ko t sot-89 5.5 0.05 1.5 0.1 1.5 0.1 4.0 0.1 2.0 0.1 4.8 0.1 4.5 0.1 1.80 0.1 0.3 0.013 !+
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(+ anpec electronics corp. head office : 5f, no. 2 li-hsin road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369 a j b t2 t1 c (mm) !
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