elektronische bauelemente BCP2098 npn silicon epitaxial planar transistor 19-may-2011 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the BCP2098 is an epitaxial planar type npn silicon transistor. features ? excellent dc current gain characteristics ? low saturation voltage, typically vce(sat)=0.25v at ic / ib=4a / 0.1a classification of h fe (1) product-rank BCP2098-q BCP2098-r range 120~270 180~390 package information package mpq leader size sot-89 1k 13? inch absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 6 v collector current -continuous i c 5 a collector current (pulse) 1 i cp 10 a total power dissipation p d 0.5(2.0) 2 w junction & storage temperature t j , t stg -55~150 c note: 1. single pulse, pw=10ms. 2. when mounted on a 40*40*0.7mm ceramic board. electrical characteristics (t a = 25c unless otherwise specified) parameters symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo 50 - - v i c =50 a, i e =0 collector-emitter breakdown v (br)ceo 20 - - v i c =1ma, i b =0 emitter-base breakdown voltage v (br)ebo 6 - - v i e =50 a, i c =0 collector cut-off current i cbo - - 0.5 a v cb =40v, i e =0 emitter cut-off current i ebo - - 0.5 a v eb =5v, i c =0 dc current gain h fe 120 - 390 v ce =2v, i c =0.5a collector-emitter sa turation voltage 1 v ce(sat) - 0.25 1 v i c =4a, i b =0.1a transition frequency f t - 150 - mhz v ce =6v, i c =50ma, f=100mhz output capacitance c ob - 30 - pf v cb =20v, i e =0, f=1mhz note: 1. measured under pulse condition. pulse width Q 300 ? s, duty cycle Q 2%. millimete r millimete r ref. min. max. ref. min. max. a 4.40 4.60 g 0.40 0.58 b 3.94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.20 sot-89 a e c d b k h f g l j 1 2 3 4
elektronische bauelemente BCP2098 npn silicon epitaxial planar transistor 19-may-2011 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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