regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
mitsubishi nch power mosfet FS18KM-9A high-speed switching use sep. 2001 2.6 0.2 15 0.314 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 0.75 0.15 3 0.33.6 0.3 6.5 0.3 ??? ? ? ? ? gate ? drain ? source mitsubishi nch power mosfet FS18KM-9A high-speed switching use 450 30 18 54 18 40 ?5 ~ +150 ?5 ~ +150 2000 2.0 v gs = 0v v ds = 0v l = 200 h ac for 1minute, terminal to case typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) maximum power dissipation channel temperature storage temperature isolation voltage weight v v a a a w c c v g v dss v gss i d i dm i da p d t ch t stg v iso symbol maximum ratings (tc = 25 c) parameter conditions ratings unit FS18KM-9A outline drawing dimensions in mm application smps, ac-adapter, power supply of printer, copier, tv, vcr. etc. to-220fn 10v drive v dss ............................................................................... 450v r ds (on) (max) .............................................................. 0.30 ? i d ......................................................................................... 18a
mitsubishi nch power mosfet FS18KM-9A high-speed switching use sep. 2001 3.0 0.26 2.34 18.0 2350 260 50 35 55 310 70 1.5 i d = 1ma, v gs = 0v i gs = 100 a, v ds = 0v v gs = 25v, v ds = 0v v ds = 450v, v gs = 0v i d = 1ma, v ds = 10v i d = 9a, v gs = 10v i d = 9a, v gs = 10v i d = 9a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 200v, i d = 9a, v gs = 10v, r gen = r gs = 50 ? i s = 9a, v gs = 0v channel to case drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance 450 30 2.5 10.8 electrical characteristics (tch = 25 c) v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v v a ma v ? v s pf pf pf ns ns ns ns v c/w 10 1 3.5 0.30 2.70 2.0 3.12 symbol unit parameter test conditions limits min. typ. max. performance curves 0 10 20 30 40 50 0 20050 100 150 10 2 5 7 2 3 10 1 5 7 2 3 10 0 5 7 2 3 10 ? 7 10 1 357 2 10 2 357 2 10 3 357 2 t c = 25 c single pulse 100 s tw = 10 s dc 1ms 10ms 0 10 20 30 40 50 0 1020304050 v gs = 20v,10v,8v p d = 4 0w t c = 25 c pulse test 5v 6v 0 4 8 12 16 20 048121620 p d = 40w t c = 25 c pulse test 5v v gs = 20v,10v,8v,6v power dissipation derating curve case temperature t c ( c) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical)
mitsubishi nch power mosfet FS18KM-9A high-speed switching use sep. 2001 0 8 16 24 32 40 048121620 t c = 25 c pulse test i d = 35a 25a 18a 9a 0 0.2 0.4 0.6 0.8 1.0 10 1 2 10 0 357 2 10 1 357 2 10 2 357 t c = 25 c pulse test v gs = 10v 20v 0 8 16 24 32 40 048121620 t c = 25 c v ds = 10v pulse test 10 0 10 2 10 1 23 57 23 57 10 0 10 1 2 3 5 7 10 2 2 3 5 7 v ds = 10v pulse test t c = 25 c 75 c 125 c 10 0 10 2 10 1 23 57 23 57 10 1 10 2 2 3 5 7 10 3 2 3 5 7 tch = 25 c v gs = 10v v dd = 200v r gen = r gs = 50 ? t d(off) t d(on) t f t r 10 0 357 10 1 32 257 10 2 3 23 2 57 10 2 3 5 7 10 3 2 2 2 3 5 7 10 4 2 3 5 7 ciss coss tch = 25 c v gs = 0v f = 1mhz crss on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) drain-source on-state resistance r ds (on) ( ? )
mitsubishi nch power mosfet FS18KM-9A high-speed switching use sep. 2001 0 1.0 2.0 3.0 4.0 5.0 50 0 50 100 150 v ds = 10v i d = 1ma 0.4 0.6 0.8 1.0 1.2 1.4 50 0 50 100 150 v gs = 0v i d = 1ma 10 1 10 0 2 3 5 7 10 1 2 3 5 7 50 0 50 100 150 v gs = 10v i d = 9a pulse test 0 4 8 12 16 20 0 40 80 120 160 200 v ds = 100v 400v 200v t c h = 25 c i d = 18a 0 8 16 24 32 40 0 0.8 1.6 2.4 3.2 4.0 v gs = 0v pulse test t c = 125 c 75 c 25 c 10 2 10 1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 4 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 3 10 2 10 1 p dm tw d = t tw t d = 1.0 = 0.5 = 0.2 = 0.1 single pulse = 0.05 = 0.02 = 0.01 gate-source voltage vs. gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch c) ( c/w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) source current i s (a)
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