?2002 fairchild semiconductor corporation www.fairchildsemi.com rev.1.0.2 features ? fixed frequency ? internal burst mode controller for stand-by mode ? pulse by pulse over current limiting ? over current protection(auto restart mode) ? over voltage protection (auto restart mode) ? over load protection(auto restart mode) ? internal thermal shutdown function(latch mode) ? under voltage lockout ? internal high voltage sense fet ?soft start description the fairchild power switch(fps) product family is specially designed for an off line smps with minimal external components. the fairchild power switch(fps) consist of high voltage power sensefet and current mode pwm ic. included pwm controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete mosfet and controller or r cc switching converter solution, a fairchild power switch(fps) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. it has a basic platform well suited for cost effective lcd monitor power supply. to-220f-5l 1 1. drain 2. gnd 3. v cc 4. feedback 5. softstart internal block diagram s r q s r q s r q tsd (tj=160 ) ifb 1 1 1 1 3 3 3 3 5 5 5 5 4 4 4 4 2 2 2 2 vref rsenese 2.5r r vref internal bias vref uvlo ron roff pwm ocl burst mode controller filter (130nsec) power-on reset (vcc=6.5v) uvlo reset (vcc=9v) olp ovp vth=7.5v vcc vth=33v vth=2v vfb offset idelay vcc vfb vth=1v vcc vth=11v/12v osc vref drain v cc gnd softstart feedbock fs6m07652rtc fairchild power switch(fps)
fs6m07652rtc 2 absolute maximum ratings (ta=25 c, unless otherwise specified) notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l=81mh, starting tj=25 c 3. l=13uh, starting tj=25 c characteristic symbol value unit maximum drain voltage v d, max 650 v drain-gate voltage (r gs =1m ? )v dgr 650 v gate-source (gnd) voltage v gs 30 v drain current pulsed (1) i dm 14.4 a dc continuous drain current (tc = 25c) i d 3.6 a dc continuous drain current (t c =100 c) i d 2.28 a dc single pulsed avalanche current (3) (energy (2) )i as (e as ) 17(570) a(mj) maximum supply voltage v cc, max 35 v input voltage range v fb ? 0.3 to v cc v v ss ? 0.3 to 10 v total power dissipation p d (watt h/s) 46 w darting 0.37 w/ c operating junction temperature t j +150 c operating ambient temperature t a ? 25 to +85 c storage temperature range t stg ? 55 to +150 c
fs6m07652rtc 3 electrical characteristics (sfet part) (ta=25 c unless otherwise specified) note: 1. pulse test : pulse width 300 s, duty 2% 2. parameter symbol condition min. typ. max. unit drain-source breakdown voltage bv dss v gs =0v, i d =250 a 650 - - v zero gate voltage drain current i dss v ds =650v, v gs =0v - - 200 a v ds =520v v gs =0v, t c =125 c - - 300 a static drain-source on resistance (1) r ds(on) v gs =10v, i d =1.8a - 1.3 1.6 ? forward trans conductance (2) gfs v ds =50v, i d =1.8a - 3.3 - s input capacitance ciss v gs =0v, v ds =25v, f = 1mhz - 1200 - pf output capacitance coss - 125 - reverse transfer capacitance crss - 23 - turn on delay time td(on) v dd =325v, i d =6.5a (mosfet switching time are essentially independent of operating temperature) -22- ns rise time tr - 70 - turn off delay time td(off) - 105 - fall time tf - 65 - total gate charge (gate-source+gate-drain) qg v gs =10v, i d =6.5a, v ds =520v (mosfet switching time are essentially independent of operating temperature) -40- nc gate source charge qgs - 6.5 - gate drain (miller) charge qgd - 18 - s 1 r --- - =
fs6m07652rtc 4 electrical characteristics (continued) (ta=25 c unless otherwise specified) notes: 1. these parameters are the current flowing in the control ic. 2. these parameters, although guaranteed at the design, are not 100% tested in production. 3. these parameters, although guaranteed, are tested in eds(wafer test) process. 4. these parameters indicate inductor current. parameter symbol condition min. typ. max. unit uvlo section start threshold voltage v start v fb = gnd 141516 v stop threshold voltage v stop v fb = gnd 8 9 10 v oscillator section initial frequency f osc - 637077khz voltage stability f stable 12v v cc 23v 0 1 3 % temperature stability (2) ? f osc -25 c ta 85 c0 510 % maximum duty cycle d max - 758085% minimum duty cycle d min ---0% feedback section feedback source current i fb v fb = gnd 0.7 0.9 1.1 ma shutdown feedback voltage v sd v fb 6.9v 6.9 7.5 8.1 v shutdown delay current i delay v fb = 5v 3.2 4.0 4.8 a softstart section softstart voltage v ss v fb = 2 4.7 5.0 5.3 v softstart current i ss v ss = v 0.8 1.0 1.2 ma burst mode section burst mode low threshold voltage v burl v fb = 0v 10.4 11.0 11.6 v burst mode high threshold voltage v burh v fb = 0v 11.4 12.0 12.6 v burst mode enable feedback voltage v ben v cc = 10.5v 0.7 1.0 1.3 v burst mode peak current limit (4) i burpk v cc = 10.5v, v fb = 0v 0.38 0.5 0.62 a burst mode frequency f bur v cc = 10.5v, v fb = 0v 63 70 77 khz current limit(self-protection)section peak current limit (4) i over - 1.76 2.0 2.24 a protection section over voltage protection v ovp v cc 29v 29 33 37 v over current latch voltage (3) v ocl - 1.8 2.0 2.2 v thermal shutdown temp (2) t sd - 140 160 - c total device section start up current i start v fb = gnd, v cc = 14v - 0.1 0.17 ma operating supply current (1) i op v fb = gnd, v cc = 16v -1015ma i op(min) v fb = gnd, v cc = 12v i op(max) v fb = gnd, v cc = 30v
fs6m07652rtc 5 typical performance characteristics -25 0 25 50 75 100 125 150 0.050 0.075 0.100 0.125 0.150 [ma] start up current vs. temp temp -25 0 25 50 75 100 125 150 9.0 9.5 10.0 10.5 11.0 [ma] operating current vs. temp temp -25 0 25 50 75 100 125 150 14.0 14.5 15.0 15.5 16.0 [v] start threshold voltage vs. temp temp -25 0 25 50 75 100 125 150 8.0 8.5 9.0 9.5 10.0 [v] stop threshold voltage vs. temp temp -25 0 25 50 75 100 125 150 64 66 68 70 72 74 76 [khz] initial freqency vs. temp temp -25 0 25 50 75 100 125 150 79.0 79.5 80.0 80.5 81.0 [%] maximum duty vs. temp temp figure 1. start up current vs. temp figure 2. operating current vs. temp figure 3. start threshold voltage vs. temp figure 4. stop threshold voltage vs. temp figure 5. initial freqency vs. temp figure 6. maximum duty vs. temp
fs6m07652rtc 6 typical performance characteristics (continued) -25 0 25 50 75 100 125 150 0.20 0.25 0.30 0.35 0.40 0.45 [v] feedback offset voltage vs. temp temp -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 [ma] feedback source current vs. temp temp -25 0 25 50 75 100 125 150 3.2 3.6 4.0 4.4 4.8 [ua] shutdown delay current vs. temp temp -25 0 25 50 75 100 125 150 7.40 7.45 7.50 7.55 7.60 [v] shutdown feedback voltage vs. temp temp -25 0 25 50 75 100 125 150 4.98 4.99 5.00 5.01 5.02 [v] softstart voltage vs. temp temp figure 7. feedback offset voltage vs. temp figure 8. feedback source current vs. temp figure 9. shutdown delay current vs. temp figure 10. shutdown feedback voltage vs. temp figure 11. softstart voltage vs. temp figure 12. over voltage protection vs. temp -25 0 25 50 75 100 125 150 32.0 32.5 33.0 33.5 34.0 [v] tem p
fs6m07652rtc 7 typical performance characteristics (continued) -25 0 25 50 75 100 125 150 10.8 10.9 11.0 11.1 11.2 [v] burst mode low voltage vs. temp temp -25 0 25 50 75 100 125 150 11.8 11.9 12.0 12.1 12.2 [v] burst mode high voltage vs. temp temp -25 0 25 50 75 100 125 150 0.40 0.45 0.50 0.55 0.60 [a] burst mode peak current vs. temp temp -25 0 25 50 75 100 125 150 1.90 1.95 2.00 2.05 2.10 [a] over current limit vs. temp temp figure 13. burst mode low voltage vs. temp figure 14. burst mode high voltage vs. temp figure 15. burst mode peak current vs. temp figure 16. over current limit vs. temp
fs6m07652rtc 8 package dimensions to-220f-5l
fs6m07652rtc 9 package dimensions (continued) to-220f-5l(forming)
fs6m07652rtc 3/8/02 0.0m 001 stock#dsxxxxxxxx ? 2002 fairchild semiconductor corporation life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. ordering information tu : non forming type ydt : forming type product number package marking code bvdss rds(on) FS6M07652RTC-TU to-220f-5l 6m07652r c 650v 1.3 fs6m07652rtc-ydt to-220f-5l(forming)
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