frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com gaas mmic passive x3 frequency multiplier, 24 - 30 ghz input v00.1008 general description features functional diagram electrical specifcations*, t a = 25 c, pin = +13 dbm typical applications this hm c -xtb110 is ideal for: ? f cc e-band c ommunication systems ? short-haul / high c apacity radios ? a utomotive radar ? test & measurement equipment the hm c -xtb110 is a monolithic x3 passive frequency multiplier which utilizes ga a s shottky diode technology, and exhibits low conversion loss and high fo isolation. this wideband x3 multiplier requires no d c power, and is targeted to high volume applications where frequency x3 of a lower frequency is more economical than directly generating a higher frequency. a ll bond pads and the die backside are ti/ a u metallized and the shottky diode devices are fully passivated for reliable operation. the hm c -xtb110 passive x3 mmi c is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for m c m and hybrid microcircuit applications. a ll data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes. hmc-xtb110 parameter min. typ. max. units frequency range input 24 - 30 ghz frequency range output 72 - 90 ghz c onversion loss 19 db *unless otherwise indicated, all measurements are from probed die c onversion loss: 19 db input drive: +13 dbm passive: n o d c bias required die size: 1.1 x 1.4 x 0.1 mm
frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com output power x3 conversion loss hmc-xtb110 v00.1008 gaas mmic passive x3 frequency multiplier, 24 - 30 ghz input -9 -8 -7 -6 -5 -4 -3 -2 -1 0 24 25 26 27 28 29 30 31 x3 ouput power (dbm) input frequency (ghz) -24 -23 -22 -21 -20 -19 -18 -17 24 25 26 27 28 29 30 31 x3 conversion loss (db) input frequency (ghz) absolute maximum ratings rf input level +18 dbm storage temperature -65 to +150 c operating temperature -55 to +85 c ele c trost a ti c se n siti v e de v ic e obser v e h an dli n g pre ca utio n s
frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc-xtb110 v00.1008 gaas mmic passive x3 frequency multiplier, 24 - 30 ghz input pad n umber function description interface schematic 1 rfi n this pad is d c coupled and matched to 50 ohms. 2 rfout this pad is d c coupled and matched to 50 ohms. die bottom g n d die bottom must be connected to rf/d c ground. pad descriptions outline drawing n otes: 1. a ll dime n sio n s a re i n i nc hes [mm]. 2. b ac kside met a lliz a tio n : gold. 3. b ac kside met a l is grou n d. 4. bo n d p a d met a lliz a tio n : gold. 5. c o nn ec tio n n ot required for u n l a beled bo n d p a ds. 6. o v er a ll die size .002 die packaging information [1] standard a lternate wp-2 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
frequ e ncy multipliers - pa ssi v e - c hip 2 2 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general handling, mounting, bonding n ote). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: a ll bare die are placed in either waffle or gel based esd pro - tective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do n ot attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with a usn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die a ttach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c . when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c . do n ot expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. epoxy die a ttach: a pply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. c ure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. d c bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. a ll bonds should be made with a nominal stage temperature of 150 c . a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. a ll bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.127mm (0.005) thick alumina thin film substrate 0.076mm (0.003) figure 1. 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab hmc-xtb110 v00.1008 gaas mmic passive x3 frequency multiplier, 24 - 30 ghz input
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