inchange semiconductor isc product specification isc silicon npn power transistor MJE13009F description collector?emitter sustaining voltage : v ceo(sus) = 400v(min.) collector saturation voltage : v ce(sat) = 1.5 (max) @ i c = 8.0a switching time : t f = 0.7 s(max.)@ i c = 8.0a applications designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220v switchmode applications such as switching regulators,inverters,motor cont rols,solenoid/relay drivers and deflection circuits. absolute maximum ratings(t a =25 ) symbol parameter value unit v cev collector-emitter voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current-continuous 12 a i cm collector current-peak 24 a i b b base current 6 a i bm base current-peak 12 a p c collector power dissipation t c =25 50 w t i junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w r th j-a thermal resistance,junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor MJE13009F electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 10ma; i b = 0 400 v v ce (sat)-1 collector-emitter saturation voltage i c = 5a ;i b = 1a 1.0 v v ce (sat)-2 collector-emitter saturation voltage i c = 8a ;i b = 1.6a 1.5 v v ce (sat)-3 collector-emitter saturation voltage i c = 12a ;i b = 3a 3.0 v v be (sat)-1 base-emitter saturation voltage i c = 5a ;i b = 1a 1.2 v v be (sat)-2 base-emitter saturation voltage i c = 8a ;i b = 1.6a 1.6 v i cev collector cutoff current v cev = 700v ; v be(off) = 1.5v t c = 100 1 5 ma i ebo emitter cutoff current v eb = 9v; i c = 0 1 ma h fe-1 dc current gain i c = 5a; v ce = 5v 8 40 h fe-2 dc current gain i c = 8a; v ce = 5v 6 30 f t current-gain?bandwidth product i c = 0.5 a; v ce = 10v; 4 mhz c ob output capacitance i e = 0; v cb = 10v; f test = 0.1mhz 180 pf switching times; resistive load t on storage time 1.1 s t s storage time 3.0 s t f fall time i c = 8a; v cc = 125v; i b1 = i b2 = 1.6a; t p = 25 s; duty cycle 1% 0.7 s isc website www.iscsemi.cn
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