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MW7IC915NT1 1 rf device data freescale semiconductor rf ldmos wideband integrated power amplifier the mw7ic915n wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 mhz. this multi - stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats. driver application ? 900 mhz ? typical single - carrier w - cdma performance: v dd = 28 volts, i dq1 = 52 ma, i dq2 = 134 ma, p out = 1.6 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) acpr (dbc) 865 mhz 37.9 17.1 - 50.4 880 mhz 38.0 17.4 - 50.6 895 mhz 37.8 17.5 - 51.3 ? capable of handling 10:1 vswr, @ 32 vdc, 880 mhz, p out = 23.5 watts cw (3 db input overdrive from rated p out ) ? stable into a 5:1 vswr. all spurs below - 60 dbc @ 30 to 41.5 dbm cw p out . ? typical p out @ 1 db compression point 15.5 watts cw driver application ? 700 mhz ? typical single - carrier w - cdma performance: v dd = 28 volts, i dq1 = 50 ma, i dq2 = 144 ma, p out = 1.6 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) acpr (dbc) 728 mhz 37.8 17.2 - 49.5 748 mhz 37.8 17.3 - 50.5 768 mhz 37.7 17.3 - 51.4 features ? characterized with series equivalent large - signal impedance parameters and common source s - parameters ? on - chip matching (50 ohm input, dc blocked) ? integrated quiescent current temperature compensation with enable/disable function (1) ? integrated esd protection ? 225 c capable plastic package ? rohs compliant ? in tape and reel. t1 suffix = 1000 units per 16 mm, 13 inch reel. 1. refer to an1977, quiescent current thermal tracking circuit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www .freescale.com/rf. select documentation/application notes - an1977 or an1987. 728 - 960 mhz, 1.6 w avg., 28 v single w - cdma rf ldmos wideband integrated power amplifier MW7IC915NT1 case 1894 - 01 pqfn 8x8 plastic document number: mw7ic915n rev. 0, 9/2009 freescale semiconductor technical data ? freescale semiconductor, inc., 2009. all rights reserved.
2 rf device data freescale semiconductor MW7IC915NT1 figure 1. functional block diagram figure 2. pin connections v gs2 v gs1 1 rf in quiescent current temperature compensation (1) rf in rf out /v ds2 v ds1 2 3 4 5 6 7 8 9 10 11 12 18 17 16 15 14 13 24 23 22 21 20 19 gnd gnd rf out /v ds2 v ds1 v ds1 v gs1 v gs2 rf in nc nc nc nc nc nc nc rf out /v ds2 rf out /v ds2 rf out /v ds2 rf out /v ds2 rf out /v ds2 nc nc nc 1. refer to an1977, quiescent current thermal tracking circuit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www .freescale.com/rf. select documentation/application notes - an1977 or an1987. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg - 65 to +150 c operating junction temperature (1) t j 150 c input power p in 4.7 dbm table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case w - cdma application stage 1, 28 vdc, i dq1 = 60 ma (case temperature 82 c, p out = 1.6 w cw) stage 2, 28 vdc, i dq2 = 130 ma r jc 7.5 3.2 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 1b (minimum) machine model (per eia/jesd22 - a115) a (minimum) charge device model (per jesd22 - c101) iii (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22 - a113, ipc/jedec j - std - 020 3 150 c 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/development tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955.
MW7IC915NT1 3 rf device data freescale semiconductor table 5. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 ? off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 1.5 vdc, v ds = 0 vdc) i gss ? ? 1 adc stage 1 ? on characteristics gate threshold voltage (v ds = 10 vdc, i d = 9 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v ds = 28 vdc, i d = 52 madc) v gs(q) ? 3 ? vdc fixture gate quiescent voltage (v dd = 28 vdc, i d = 52 madc, measured in functional test) v gg(q) 5.5 6.3 7 vdc stage 2 ? off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 1.5 vdc, v ds = 0 vdc) i gss ? ? 1 adc stage 2 ? on characteristics gate threshold voltage (v ds = 10 vdc, i d = 36 adc) v gs(th) 1 2 3 vdc gate quiescent voltage (v ds = 28 vdc, i d = 134 madc) v gs(q) ? 2.9 ? vdc fixture gate quiescent voltage (v dd = 28 vdc, i d = 134 madc, measured in functional test) v gg(q) 3.8 4.6 5.3 vdc drain - source on - voltage (v gs = 10 vdc, i d = 3.6 adc) v ds(on) 0.1 0.3 0.8 vdc functional tests (1) (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 52 ma, i dq2 = 134 ma, p out = 1.6 w avg., f = 880 mhz, single - carrier w - cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. power gain g ps 35.0 38.0 41.0 db power added efficiency pae 15.0 17.4 ? % adjacent channel power ratio acpr ? - 50.6 -47 .0 dbc input return loss irl ? -22 -9 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 52 ma, i dq2 = 134 ma, p out = 1.6 w avg., single - carrier w - cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. frequency g ps (db) pae (%) acpr (dbc) irl (db) 865 mhz 37.9 17.1 - 50.4 -21 880 mhz 38.0 17.4 - 50.6 -22 895 mhz 37.8 17.5 - 51.3 -22 1. part internally input matched. (continued)
4 rf device data freescale semiconductor MW7IC915NT1 table 5. electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (in freescale test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 52 ma, i dq2 = 134 ma, 865 - 895 mhz bandwidth p out @ 1 db compression point, cw (v dd = 28 vdc, i dq1 = 75 ma, i dq2 = 100 ma) p1db ? 15.5 ? w imd symmetry @ 16 w pep, p out where imd third order intermodulation 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 45 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 180 ? mhz quiescent current accuracy over temperature (1) stage 1 with 2 k gate feed resistors ( - 30 to 85 c) stage 2 i qt ? ? 0.10 0.12 ? ? % gain flatness in 30 mhz bandwidth @ p out = 1.6 w avg. g f ? 0.1 ? db gain variation over temperature (-30 c to +85 c) g ? 0.041 ? db/ c output power variation over temperature (-30 c to +85 c) p1db ? 0.004 ? dbm/ c typical performance ? 700 mhz (in freescale 700 mhz test fixture, 50 ohm system) v dd = 28 vdc, i dq1 = 50 ma, i dq2 = 144 ma, p out = 1.6 w avg., single - carrier w - cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. frequency g ps (db) pae (%) acpr (dbc) irl (db) 728 mhz 37.8 17.2 - 49.5 -23 748 mhz 37.8 17.3 - 50.5 -22 768 mhz 37.7 17.3 - 51.4 -22 1. refer to an1977, quiescent current thermal tracking circuit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf. select documentation/application notes - an1977 or an1987.
MW7IC915NT1 5 rf device data freescale semiconductor figure 3. MW7IC915NT1 test circuit component layout mw7ic915n rev 3 c11 c9 v g1 c7 c8 c10 c12 v g2 r1 r2 c1 c2 c20 c18 c16 c14 c3 c4 c5 c6 v d1 c13 c15 c17 v d2 c19 table 6. MW7IC915NT1 test circuit com ponent designations and values part description part number manufacturer c1 1.8 pf chip capacitor atc100b1r8bt500xt atc c2, c5 0.8 pf chip capacitors atc100b0r8bt500xt atc c3 6.2 pf chip capacitor atc100b6r2bt500xt atc c4 3.3 pf chip capacitor atc100b3r3ct500xt atc c6, c11, c12, c13, c14 47 pf chip capacitors atc100b470jt500xt atc c7, c8 1 f chip capacitors grm31mr71h105ka88l murata c9, c10 0.01 f chip capacitors grm32mr71h104ja01l murata c15, c16 4.7 f chip capacitors grm31cr71h475ka12l murata c17, c18 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c19, c20 100 f, 50 v electrolytic capacitors mcgpr50v107m8x11 - rh multicomp r1, r2 2 k , 1/4 w resistors crcw12062k00fkea vishay
6 rf device data freescale semiconductor MW7IC915NT1 typical characteristics irl, input return loss (db) 800 irl g ps acpr f, frequency (mhz) figure 4. output peak - to - average ratio compression (parc) broadband performance @ p out = 1.6 watts avg. ?30 ?10 ?20 32 40 39 38 ?50 19 18 17 16 ?46 ?47 ?48 pae, power added efficiency (%) g ps , power gain (db) 37 36 35 34 820 840 860 880 900 920 960 1000 ?49 ?40 parc parc (db) 0.5 0 ?0.5 ?1 acpr (dbc) figure 5. intermodulation distortion products versus two - tone spacing two?tone spacing (mhz) 10 ?70 ?5 ?20 ?30 ?50 1 200 imd, intermodulation distortion (dbc) ?40 im3?u im3?l im5?u im5?l im7?l im7?u v dd = 28 vdc, p out = 16 w (pep), i dq1 = 52 ma i dq2 = 134 ma, two?tone measurements (f1 + f2)/2 = center frequency of 880 mhz figure 6. output peak - to - average ratio compression (parc) versus output power 1 p out , output power (watts) ?1 ?3 ?5 4 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 2 610 0 60 50 40 30 20 10 pae, power added efficiency (%) 8 acpr acpr (dbc) ?50 ?20 ?25 ?30 ?40 ?35 ?45 40 g ps , power gain (db) 39.5 39 38.5 38 37.5 37 g ps pae pae ?1 db = 3.8 w parc v dd = 28 vdc, i dq1 = 52 ma, i dq2 = 134 ma, f = 880 mhz single?carrier w?cdma, 3.84 mhz channel bandwidth 33 940 980 v dd = 28 vdc, p out = 1.6 w (avg.), i dq1 = 52 ma i dq2 = 134 ma, single?carrier w?cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability on ccdf ?60 ?65 ?55 ?45 ?35 ?25 ?15 ?10 100 input signal par = 7.5 db @ 0.01% probability on ccdf ?2 db = 5.2 w ?3 db = 6.9 w
MW7IC915NT1 7 rf device data freescale semiconductor typical characteristics 1 p out , output power (watts) avg. figure 7. single - carrier w - cdma power gain, power added efficiency and acpr versus output power ?25 ?30 33 41 10 90 80 70 60 50 pae, power added efficiency (%) g ps , power gain (db) 40 10 20 ?55 acpr (dbc) 39 38 37 ?15 ?40 ?50 figure 8. broadband frequency response ?20 40 300 f, frequency (mhz) v dd = 28 vdc p in = ?30 dbm i dq1 = 52 ma i dq2 = 134 ma 20 10 0 gain (db) 30 gain 600 900 1200 irl ?30 0 ?5 ?10 ?15 ?20 irl (db) ?10 ?25 ?20 ?35 ?45 36 35 34 acpr 865 mhz pae g ps 40 30 20 880 mhz 895 mhz v dd = 28 vdc, i dq1 = 52 ma, i dq2 = 134 ma, single?carrier w?cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability on ccdf 895 mhz 880 mhz 895 mhz 880 mhz 865 mhz w - cdma test signal 0.0001 100 0 peak?to?average (db) figure 9. ccdf w - cdma iq magnitude clipping, single - carrier test signal 10 1 0.1 0.01 0.001 24 6 8 probability (%) w?cdma. acpr measured in 3.84 mhz channel bandwidth @ 5 mhz offset. input signal par = 7.5 db @ 0.01% probability on ccdf input signal 10 ?60 ?100 10 (db) ?20 ?30 ?40 ?50 ?70 ?80 ?90 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 ?1.8 ?3.6 ?5.4 ?9 9 f, frequency (mhz) figure 10. single - carrier w - cdma spectrum ?7.2 ?acpr in 3.84 mhz integrated bw +acpr in 3.84 mhz integrated bw ?10 0 13579
8 rf device data freescale semiconductor MW7IC915NT1 v dd = 28 vdc, i dq1 = 52 ma, i dq2 = 134 ma, p out = 1.6 w avg. f mhz z in z load 820 52.99 - j29.47 7.72 + j13.96 840 49.35 - j27.56 7.34 + j14.74 860 46.67 - j23.60 7.43 + j15.55 880 44.88 - j17.63 7.94 + j16.07 900 43.73 - j10.46 7.98 + j16.74 920 43.12 - j2.75 7.80 + j17.62 940 43.38 + j5.01 8.28 + j18.33 960 44.07 + j12.97 9.07 + j19.04 980 43.89 + j12.61 9.14 + j20.02 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 11. series equivalent input and load impedance z in z load device under test output matching network
MW7IC915NT1 9 rf device data freescale semiconductor alternative peak tune load pull characteristics 6 p in , input power (dbm) v dd = 28 vdc, i dq1 = 52 ma, i dq2 = 134 ma, pulsed cw, 10 sec(on), 10% duty cycle 41 39 108 actual ideal 42 40 36 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 43 45 46 48 4 0 12 2 44 47 f = 865 mhz f = 880 mhz f = 895 mhz f = 865 mhz f = 880 mhz f = 895 mhz 38 37 f p1db p3db f (mhz) watts dbm watts dbm 865 18.1 42.6 22.4 43.5 880 18.5 42.7 22.3 43.5 895 18.5 42.7 22.2 43.5 test impedances per compression level f (mhz) z source z load 865 p1db 48.7 + j15.6 6.8 + j6.5 880 p1db 52.3 + j20.8 6.9 + j6.7 895 p1db 55.1 + j22.2 7.4 + j6.7 figure 12. pulsed cw output power versus input power @ 28 v
10 rf device data freescale semiconductor MW7IC915NT1 figure 13. MW7IC915NT1 test circuit component layout ? 700 mhz mw7ic915n rev 3 c8 v g1 c10 c12 v g2 r1 r2 c1 c2 c13 c11 c4 c5 c6 v d1 c14 c15 c17 v d2 c16 c9 c3 c7 table 7. MW7IC915NT1 test circuit com ponent designations and values ? 700 mhz part description part number manufacturer c1, c3, c6 2.7 pf chip capacitors atc100b2r7bt500xt atc c2 0.3 pf chip capacitor atc100b0r3bt500xt atc c4 4.7 pf chip capacitor atc100b4r7ct500xt atc c5 5.6 pf chip capacitor atc100b5r6ct500xt atc c7, c8, c9, c10, c11 47 pf chip capacitors atc100b470jt500xt atc c12, c13 4.7 f chip capacitors grm31cr71h475ka12l murata c14, c15 10 f, 50 v chip capacitors grm55dr61h106ka88l murata c16, c17 100 f, 50 v electrolytic capacitors mcgpr50v107m8x11 - rh multicomp r1, r2 2 k , 1/4 w resistors crcw12062k00fkea vishay
MW7IC915NT1 11 rf device data freescale semiconductor typical characteristics ? 700 mhz irl, input return loss (db) 710 irl g ps acpr f, frequency (mhz) figure 14. output peak - to - average ratio compression (parc) broadband performance @ p out = 1.6 watts avg. ?30 ?10 ?20 37.4 38.8 38.6 38.4 ?52 17.5 17 16.5 16 ?49 ?50 ?51 pae, power added efficiency (%) g ps , power gain (db) 38.2 38 37.8 37.6 720 730 740 750 760 770 780 790 ?40 parc parc (db) 0.5 0 ?0.5 ?1 acpr (dbc) pae v dd = 28 vdc p out = 1.6 w (avg.), i dq1 = 50 ma i dq2 = 144 ma, single?carrier w?cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability on ccdf 1 p out , output power (watts) avg. figure 15. single - carrier w - cdma power gain, power added efficiency and acpr versus output power ?25 ?30 33 41 10 90 80 70 60 50 pae, power added efficiency (%) g ps , power gain (db) 40 10 20 ?55 acpr (dbc) 39 38 37 ?15 ?40 ?50 ?20 ?35 ?45 36 35 34 acpr g ps 40 30 20 768 mhz v dd = 28 vdc, i dq1 = 50 ma, i dq2 = 144 ma, single?carrier w?cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probability on ccdf 748 mhz 728 mhz pae 768 mhz 748 mhz 728 mhz 748 mhz 768 mhz figure 16. broadband frequency response ?10 40 300 f, frequency (mhz) v dd = 28 vdc p in = ?30 dbm i dq1 = 50 ma i dq2 = 144 ma 20 10 0 gain (db) 30 gain 600 900 1200 irl ?50 0 ?10 ?20 ?30 ?40 irl (db)
12 rf device data freescale semiconductor MW7IC915NT1 v dd = 28 vdc, i dq1 = 50 ma, i dq2 = 144 ma, p out = 1.6 w avg. f mhz z in z load 710 54.61 - j2.01 9.57 + j6.52 720 55.46 + j0.26 9.95 + j7.04 730 56.75 + j2.12 10.70 + j7.79 740 58.35 + j3.55 11.39 + j8.18 750 60.11 + j4.65 11.41 + j8.07 760 61.83 + j5.22 11.00 + j7.90 770 63.19 + j5.31 10.88 + j7.88 780 64.01 + j4.90 11.41 + j7.87 790 64.18 + j3.91 12.32 + j7.61 z in = device input impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 17. series equivalent input and load impedance ? 700 mhz z in z load device under test output matching network
MW7IC915NT1 13 rf device data freescale semiconductor package dimensions
14 rf device data freescale semiconductor MW7IC915NT1
MW7IC915NT1 15 rf device data freescale semiconductor
16 rf device data freescale semiconductor MW7IC915NT1 product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 sept. 2009 ? initial release of data sheet
MW7IC915NT1 17 rf device data freescale semiconductor information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2009. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1 - 800 - 441 - 2447 or +1 - 303 - 675 - 2140 fax: +1 - 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mw7ic915n rev. 0, 9/2009

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