1/10 september 2003 STGD3NB60KD n-channel 6a - 600v - dpak short circuit proof powermesh? igbt n high input impedance (voltage driven) n low gate charge n off losses include tail current n high frequency operation n short circuit rated n latch current free operation n co-packaged with turboswitch? antiparallel diode description using the latest high voltage technology based on a patented strip layout, stmicroelectronics has designed an advanced family of igbts, the powermesh ? igbts, with outstanding performances. the suffix k identifies a family optimized for high frequency motor control applications with short circuit withstand capability. applications n high frequency motor controls n smps and pfc ordering information type v ces v ce(sat) (max) @25c i c (#) @100c STGD3NB60KD 600 v < 2.8 v6a sales type marking package packaging STGD3NB60KDt4 gd3nb60kd dpak tape & reel dpak 1 3 internal schematic diagram
STGD3NB60KD 2/10 absolute maximum ratings ( ) pulsewidthlimitedbysafeoperatingarea thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (1) (#) calculated according to the iterative formula: symbol parameter value unit v ces collector-emitter voltage (v gs =0) 600 v v ecr emitter-collector voltage 20 v v ge gate-emitter voltage 20 v i c collector current (continuous) at t c = 25c(#) 10 a i c collector current (continuous) at t c = 100c(#) 6a i cm ( ) collector current (pulsed) 24 a tsc short circuit withstand 10 m s p tot total dissipation at t c = 25c 50 w derating factor 0.4 w/c t stg storage temperature C55 to 150 c t j operating junction temperature rthj-case thermal resistance junction-case max 2.5 c/w rthj-amb thermal resistance junction-ambient max 100 c/w symbol parameter test conditions min. typ. max. unit v br(ces) collector-emitter breakdown voltage i c = 250 a, v ge = 0 600 v i ces collector cut-off (v ge =0) v ce = max rating, t c =25c 50 a v ce = max rating, t c = 125 c 100 a i ges gate-emitter leakage current (v ce =0) v ge =20v,v ce = 0 100 na symbol parameter test conditions min. typ. max. unit v ge(th) gate threshold voltage v ce =v ge ,i c = 250 a 57v v ce(sat) collector-emitter saturation voltage v ge =15v,i c =3a 2.4 2.8 v v ge =15v,i c = 3 a, tj =125c 1.9 v i c t c () t jmax t c C r thj c C v cesat max () t c i c , () -------------------------------------------------------------------------------------- =
3/10 STGD3NB60KD electrical characteristics (continued) dynamic switching on switching off note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by max. junction temperature. (**)losses include also the tail (jedec standardization) collector-emitter diode symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ce =25v , i c =3 a 2.4 s c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce =25v,f=1mhz,v ge = 0 220 50 5.6 pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 480v, i c =3a, v ge =15v 14 3.3 8 19 nc nc nc tscw short circuit withstand time v ce = 0.5 bvces , v ge =15v , tj = 125c , r g =10 w 10 s symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v cc =480v,i c =3a r g =10 w ,v ge =15v 13.5 4.5 ns ns (di/dt) on turn-on current slope v cc =480v,i c =7a,r g =10 w v ge = 15 v,tj = 125c 500 a/s eon turn-on switching losses 30 j symbol parameter test conditions min. typ. max. unit t c cross-over time v cc = 480 v, i c =3 a, r ge =10 w ,v ge =15v 86 ns t r (v off ) off voltage rise time 20 ns t d ( off ) delay time 32 ns t f fall time 85 ns e off (**) turn-off switching loss 50 m j e ts total switching loss 78 m j t c cross-over time v cc = 480 v, i c =3a, r ge =10 w ,v ge =15v tj = 125 c 190 ns t r (v off ) off voltage rise time 55 ns t d ( off ) delay time 90 ns t f fall time 130 ns e off (**) turn-off switching loss 110 m j e ts total switching loss 140 m j symbol parameter test conditions min. typ. max. unit i f i fm forward current forward current pulsed 1.5 12 a a v f forward on-voltage i f = 1.5 a i f = 1.5 a, tj = 125 c 1.6 1.3 2.1 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 1.5 a ,v r =35v, tj = 125c, di/dt = 100 a/ m s 95 110 2.7 ns nc a
STGD3NB60KD 4/10 transconductance thermal impedance transfer characteristics output characteristics collector-emitter on voltage vs temperature
5/10 STGD3NB60KD normalized breakdown voltage vs temperature collector-emitter on voltage vs collettor current gate threshold vs temperature total switching losses vs gate resistance gate charge vs gate-emitter voltage capacitance variations
STGD3NB60KD 6/10 total switching losses vs temperature emitter-collector diode characteristics switching off safe operating area total switching losses vs collector current
7/10 STGD3NB60KD fig. 2: test circuit for inductive load switching fig. 1: gate charge test circuit
STGD3NB60KD 8/10 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
9/10 STGD3NB60KD tape and reel shipment (suffix t4)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
STGD3NB60KD 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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