igbt-ipm r series 1200v / 50a 6 in one-package 6mbp50ra120 features temperature protection provided by directly detecting the junction temperature of the igbts low power loss and soft switching compatible with existing ipm-n series packages high performance and high reliability igbt with overheating protection higher reliability because of a big decrease in number of parts in built-in control circuit maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) symbol rating unit min. max. dc bus voltage dc bus voltage (surge) dc bus voltage (short operating) collector-emitter voltage inv collector current dc 1ms dc collector power dissipation one transistor junction temperature input voltage of power supply for pre-driver input signal voltage input signal current alarm signal voltage alarm signal current storage temperature operating case temperature isolating voltage (case-terminal) screw torque mounting (m5) terminal (m5) v dc v dc(surge) v sc v ces i c i cp -i c p c t j v cc *1 v in *2 i in v alm *3 i alm *4 t stg t op v iso *5 item 0 0 200 0 - - - - - 0 0 - 0 - -40 -20 - - - 900 1000 800 1200 50 100 50 357 150 20 vz 1 vcc 15 125 100 ac2.5 3.5 * 6 3.5 * 6 v v v v a a a w c v v ma v ma c c kv nm nm *1 apply vcc between terminal no. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 apply vin between terminal no. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 apply v alm between terminal no. 16 and 10. *4 apply i alm to terminal no. 16. *5 50hz/60hz sine wave 1 minute. *6 recommendable value : 2.5 to 3.0 nm electrical characteristics of power circuit (at tc=tj=25c, vcc=15v) item symbol condtion min. typ. max. unit inv collector current at off signal input collector-emitter saturation voltage forward voltage of fwd i ces v ce(sat) v f v ce =1200v input terminal open ic=50a -ic=50a C C 1.0 ma C C 2.6 v C C 3.0 v fig.1 measurement of case temperature
6mbp50ra120 igbt-ipm electrical characteristics of control circuit (at tc=tj=25c, vcc=15v) item symbol condition min. typ. max. unit power supply current of p-line side pre-driver(one unit) power supply current of n-line side three pre-driver input signal threshold voltage (on/off) input zener voltage over heating protection temperature level hysteresis igbt chips over heating protection temperature level hysteresis collector current protection level inv over current protection delay time under voltage protection level hysteresis alarm signal hold time sc protection delay time limiting resistor for alarm fsw=0 to 15khz tc=-20 to 100c *7 fsw=0 to 15khz tc=-20 to 100c *7 on off rin=20k ohm vdc=0v, ic=0a, case temperature surface of igbt chips tj=125c tj=25c fig.2 tj=25c fig.3 i ccp i ccn v in(th) v z t coh t ch t joh t jh i oc t doc v uv v h t alm t sc r alm 3 10 1.00 1.25 - 110 - 150 - 75 - 11.0 0.2 1.5 - 1425 - - 1.35 1.60 8.0 - 20 - 20 - 10 - - 2 - 1500 18 65 1.70 1.95 - 125 - - - - - 12.5 - - 12 1575 ma ma v v v c c c c a s v v ms s ohm dynamic characteristics (at tc=tj=125c, vcc=15v) item symbol condition min. typ. max. unit switching time (igbt) switching time (fwd) ton ic=50a, vdc=600v toff trr if=50a, vdc=600v 0.3 - - - - 3.6 - - 0.4 s s s thermal characteristics (tc=25c) item symbol typ. max. unit junction to case thermal resistance case to fin thermal resistance with compound rth(j-c) rth(j-c) rth(c-f) - 0.35 - 0.85 0.05 - c/w c/w c/w inv igbt fwd item symbol min. typ. max. unit dc bus voltage operating power supply voltage range of pre-driver switching frequency of ipm screw torque mounting (m5) terminal (m5) v dc 200 - 800 v v cc 13.5 15 16.5 v f sw 1 - 20 khz - 2.5 - 3.0 nm - 2.5 - 3.0 nm recommendable value * 7 switching frequency of ipm
6mbp50ra120 igbt-ipm block diagram outline drawings, mm mass : 440g pre-drivers include following functions a) amplifier for driver b) short circuit protection c) undervoltage lockout circuit d) over current protection e) igbt chip over heating protection
6mbp50ra120 igbt-ipm characteristics (representative) control circuit 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 power supply current vs. switching frequency tj=100c n-side p-side power supply current : icc (m a) s witching frequency : fsw (khz) vcc=13v vcc=13v vcc=15v vcc=15v vcc=17v vcc=17v 0 0.5 1 1.5 2 2.5 12 13 14 15 16 17 18 input si g nal threshold volta g e vs. power supply volta g e input signal threshold voltage : vin(on),vin(off) (v) power supply voltage : vcc (v) tj=25c tj=125c } vin(on) } vin(off) 0 0.2 0.4 0.6 0.8 1 20 40 60 80 100 120 140 under voltage hysterisis vs. jnction temperature under voltage hysterisis : vh (v) junction temperature : tj (c) 0 2 4 6 8 10 12 14 20 40 60 80 100 120 140 under volta g e vs. junction temperature under voltage : vuvt (v) junction temperature : tj (c) 0 0.5 1 1.5 2 2.5 3 12 13 14 15 16 17 18 alarm hold time vs. power supply voltage alarm hold time : talm (msec) power supply voltage : vcc (v) tj=125c tj=25c 0 50 100 150 200 12 13 14 15 16 17 18 over heatin g characteris tics tcoh,tjoh,tch,tjh vs. vcc over heating protection : tcoh,tjoh (c) oh hysterisis : tch,tjh (c) pow er supply voltage : vcc (v) tjoh tc oh tch,tjh
6mbp50ra120 igbt-ipm inverter 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 c ollec tor current vs. collector-em itter volta g e tj=25c vcc=13v vcc=15v vcc=17v collector current : ic (a) c ollector-em itter volta g e : vce (v) 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 collector current vs. collector-em itter volta g e tj=125c vcc=13v vcc=15v vcc=17v collector current : ic (a) c ollector-em itter volta g e : vce (v) 10 100 1000 10000 0 1020304050607080 switching time vs. collector current edc=600v,vcc=15v,tj=25c switching tim e : ton,toff,tf (nsec) collector current : ic (a) to ff to n tf 10 100 1000 10000 0 1020304050607080 switching time vs. collector current edc=600v,vcc=15v,tj=125c switching tim e : ton,toff,tf (nsec) collector current : ic (a) to ff to n tf 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 forward current vs. forward voltage 125c 25c forward current : if (a) forward voltage : vf (v) 10 100 1000 0 1020304050607080 reverse recovery characteristics trr,irr vs. if reverse recovery current : irr(a) reverse recovery tim e : trr(nsec) f orw ard current : if(a ) trr125c trr25c irr125c irr25c
6mbp50ra120 igbt-ipm 0 100 200 300 400 500 600 700 0 200 400 600 800 1000 1200 1400 reversed biased safe operating area vcc=15v,tj 125c c ollector current : ic (a) c olle cto r-em itter voltag e : vc e (v ) scsoa (non-repetitive pulse) rbsoa (repetitive pulse) 0 50 100 150 200 250 300 350 400 0 20406080100120140160 power derating for igbt (per device) collecter power dissipation : pc (w) case temperature : tc (c) 0 25 50 75 100 125 150 0 20 40 60 80 100 120 140 160 power derating for fw d (per device) collecter power dissipation : pc (w) case tem perature : tc (c) 0 5 10 15 20 25 0 1020304050607080 switching loss vs. collector current edc=600v,vcc=15v,tj=25c eon eoff err switching loss : eon,eoff,err (m j/cycle) collector current : ic (a) 0 5 10 15 20 25 0 10 20304050 607080 switching loss vs. collector current edc=600v,vcc=15v,tj=125c eon eoff err switching loss : eon,eoff,err (m j/cycle) collector current : ic (a) = < 0.01 0.1 1 0.001 0.01 0.1 1 transient thermal resistance thermal resistance : rth(j-c) (c/w ) pulse width :pw (sec) fw d ig bt
6mbp50ra120 igbt-ipm 0 50 100 150 200 0 20 40 60 80 100 120 140 over current protection vs. junction temperature vcc=15v junction temperature : tj(c) over current protection level : ioc(a)
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