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d a t a sh eet product speci?cation supersedes data of april 1995 file under discrete semiconductors, sc07 1996 jul 29 discrete semiconductors bf556a; bf556b; bf556c n-channel silicon junction field-effect transistors
1996 jul 29 2 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf556a; bf556b; bf556c features low leakage level (typ. 500 fa) high gain low cut-off voltage. applications impedance converters in e.g. electret microphones and infra-red detectors vhf amplifiers in oscillators and mixers. description n-channel symmetrical silicon junction field-effect transistors in a sot23 package. pinning - sot23 pin symbol description 1 s source 2 d drain 3 g gate caution the device is supplied in an antistatic package. the gate-source input must be protected against static discharge during transport or handling. fig.1 simplified outline and symbol. marking codes: bf556a: m84. bf556b: m85. bf556c: m86. handbook, halfpage s d g 2 1 3 mam036 top view quick reference data symbol parameter conditions min. max. unit v ds drain-source voltage (dc) - 30 v v gsoff gate-source cut-off voltage i d = 200 m a; v ds = 15 v - 0.5 - 7.5 v i dss drain current v gs = 0; v ds = 15 v bf556a 3 7 ma bf556b 6 13 ma bf556c 11 18 ma p tot total power dissipation up to t amb = 25 c - 250 mw ? y fs ? forward transfer admittance v gs = 0; v ds = 15 v 4.5 - ms
1996 jul 29 3 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf556a; bf556b; bf556c limiting values in accordance with the absolute maximum rating system (iec 134). note 1. device mounted on an fr4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm 2 . thermal characteristics note 1. device mounted on an fr4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm 2 . static characteristics t j = 25 c; unless otherwise specified. symbol parameter conditions min. max. unit v ds drain-source voltage (dc) - 30 v v gso gate-source voltage open drain - - 30 v v gdo gate-drain voltage (dc) open source - - 30 v i g forward gate current (dc) - 10 ma p tot total power dissipation up to t amb = 25 c; note 1 - 250 mw t stg storage temperature - 65 150 c t j operating junction temperature - 150 c symbol parameter value unit r th j-a thermal resistance from junction to ambient; note 1 500 k/w symbol parameter conditions min. typ. max. unit v (br)gss gate-source breakdown voltage i g = - 1 m a; v ds = 0 - 30 - - v v gsoff gate-source cut-off voltage i d = 200 m a; v ds = 15 v - 0.5 - 7.5 v i dss drain current v gs = 0; v ds = 15 v bf556a 3 - 7 ma bf556b 6 - 13 ma bf556c 11 - 18 ma i gss gate leakage current v gs = - 20 v; v ds = 0 - - 0.5 - 5000 pa ? y fs ? forward transfer admittance v gs = 0; v ds = 15 v 4.5 - - ms ? y os ? common source output admittance v gs = 0; v ds = 15 v - 40 - m s
1996 jul 29 4 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf556a; bf556b; bf556c dynamic characteristics t amb = 25 c; unless otherwise specified. symbol parameter conditions typ. unit c is input capacitance v ds = 15 v; v gs = - 10 v; f = 1 mhz 1.7 pf v ds = 15 v; v gs = 0; f = 1 mhz 3 pf c rs reverse transfer capacitance v ds = 15 v; v gs = - 10 v; f = 1 mhz 0.8 pf v ds = 15 v; v gs = 0; f = 1 mhz 0.9 pf g is common source input conductance v ds = 10 v; i d = 1 ma; f = 100 mhz 15 m s v ds = 10 v; i d = 1 ma; f = 450 mhz 300 m s g fs common source transfer conductance v ds = 10 v; i d = 1 ma; f = 100 mhz 2 ms v ds = 10 v; i d = 1 ma; f = 450 mhz 1.8 ms g rs common source reverse conductance v ds = 10 v; i d = 1 ma; f = 100 mhz - 6 m s v ds = 10 v; i d = 1 ma; f = 450 mhz - 40 m s g os common source output conductance v ds = 10 v; i d = 1 ma; f = 100 mhz 30 m s v ds = 10 v; i d = 1 ma; f = 450 mhz 60 m s v n equivalent input noise voltage v ds = 10 v; i d = 1 ma; f = 100 hz 40 nv/ ? hz fig.2 drain current as a function of gate-source cut-off voltage; typical values. v ds = 15 v. handbook, halfpage 0 4 8 12 16 20 0 1 2 3 4 5 6 7 mrc154 i dss (ma) v gsoff (v) fig.3 forward transfer admittance as a function of gate-source cut-off voltage; typical values. v ds = 15 v; i d = 1 m a. handbook, halfpage mrc156 0 2 4 6 8 10 0 1 2 3 4 5 6 7 v gsoff (v) y fs (ms)
1996 jul 29 5 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf556a; bf556b; bf556c fig.4 common-source output conductance as a function of gate-source cut-off voltage; typical values. v ds = 15 v. handbook, halfpage 0 - 2 - 4 - 8 100 0 80 mrc153 - 6 60 40 20 g os ( m s) v gsoff (v) fig.5 drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. v ds = 100 mv; v gs = 0. handbook, halfpage 0 2 4 8 300 100 0 200 mrc155 6 r dson ( w ) v gsoff (v) fig.6 typical output characteristics; bf556a. handbook, halfpage 0 4 8 16 5 0 4 mrc145 12 3 2 1 v ds (v) i d (ma) - 0.5 v - 1 v v gs = 0 v fig.7 typical output characteristics; bf556b. handbook, halfpage 0 4 8 12 16 16 12 4 0 8 mrc146 v ds (v) i d (ma) v gs = 0 v - 2.0 v - 0.5 v - 2.5 v - 1.0 v - 1.5 v
1996 jul 29 6 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf556a; bf556b; bf556c fig.8 typical output characteristics; bf556c. handbook, halfpage 0 4 8 16 25 0 20 mrc147 12 15 10 5 v ds (v) i d (ma) - 1 v - 2 v - 3 v - 4 v - 5 v v gs = 0 v fig.9 typical input characteristics. handbook, halfpage - 6 - 4 - 2 0 30 10 0 20 mrc148 v gs (v) i d (ma) bf556c bf556b bf556a v ds = 15 v. fig.10 drain current as a function of gate-source voltage; typical values. handbook, halfpage 0 - 8 - 6 - 4 - 2 10 3 10 2 1 10 10 - 1 10 - 2 10 - 3 mrc149 i d ( m a) v gs (v) bf556c bf556b bf556a v ds = 15 v. fig.11 gate current as a function of drain-gate voltage; typical values. handbook, halfpage - 10 2 - 10 - 2 - 10 - 1 - 1 - 10 20 12 4 8 0 mrc151 16 v dg (v) i g (pa) i d = 10 ma i gss 1 ma 0.1 ma i d = 10 ma only for bf556b and bf556c.
1996 jul 29 7 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf556a; bf556b; bf556c fig.12 gate current as a function of junction temperature; typical values. handbook, halfpage 10 3 10 - 1 1 10 10 2 150 50 0 - 50 mrc150 100 i gss (pa) t j ( c) v ds = 0; v gs = - 20 v. fig.13 power derating curve. mrc166 0 100 200 300 0 50 100 150 p tot (mw) t amb ( c) o fig.14 reverse transfer capacitance; typical values. v ds = 15 v. handbook, halfpage 0 0.2 0.4 0.6 0.8 1 ?0 ? ? ? ? 0 c rs (pf) v gs (v) mrc134 fig.15 input capacitance; typical values. v ds = 15 v. handbook, halfpage mrc140 0 1 2 3 ?0 ? ? ? ? 0 c is (pf) v gs (v)
1996 jul 29 8 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf556a; bf556b; bf556c fig.16 common-source input admittance; typical values. v ds = 10 v; i d = 1 ma; t amb = 25 c. handbook, halfpage mrc142 10 2 10 - 2 10 10 2 10 3 10 - 1 1 10 b is g is g is , b is (ms) f (mhz) fig.17 common-source transfer admittance; typical values. v ds = 10 v; i d = 1 ma; t amb = 25 c. handbook, halfpage mrc141 10 1 10 - 1 10 10 2 10 3 - b fs g fs g fs , - b fs (ms) f (mhz) fig.18 common-source reverse admittance; typical values. v ds = 10 v; i d = 1 ma; t amb = 25 c. handbook, halfpage mrc144 - 10 - 3 - 10 - 2 10 10 2 10 3 - 10 - 1 - 1 - 10 b rs g rs b rs , g rs (ms) f (mhz) v ds = 10 v; i d = 1 ma; t amb = 25 c. fig.19 common-source output admittance; typical values. handbook, halfpage mrc143 10 1 10 - 1 10 - 2 10 10 2 10 3 b os g os b os , g os (ms) f (mhz)
1996 jul 29 9 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf556a; bf556b; bf556c fig.20 equivalent noise voltage as a function of frequency. v ds = 10 v; i d = 1 ma. handbook, halfpage 10 f (hz) 10 2 10 3 10 4 10 5 10 3 10 2 10 1 v n (v) mrc278
1996 jul 29 10 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf556a; bf556b; bf556c package outline fig.21 sot23. handbook, full pagewidth mbc846 10 max o 10 max o 30 max o 1.1 max 0.55 0.45 0.150 0.090 0.1 max 2 1 3 m 0.1 a b 0.48 0.38 top view 1.4 1.2 2.5 max 3.0 2.8 m 0.2 a a b 0.95 1.9 dimensions in mm.
1996 jul 29 11 philips semiconductors product speci?cation n-channel silicon junction ?eld-effect transistors bf556a; bf556b; bf556c definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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