schottky barrier diodes for stripline, microstrip mixers and detectors technical data features ? small size ? low noise figure 6 db typical at 9 ghz ? rugged design ? high uniformity ? high burnout rating 1 w rf pulse power incident ? both medium and low barrier available outline c2 c p = 0.055 pf 5082-2207/09 5082-2794 0.46 (0.018) 0.30 (0.012) 3.81 (0.150) min. angle cut 30-50 alternate 0.13 (.005) dia. hole 1.5 (0.06) from end cathode 1.40 (0.055) 1.14 (0.045) square 0.36 (0.014) max. 1.27 (0.050) max. 0.10 (0.004) typ. dimensions in millimeters and (inches). description/applications this family consists of medium barrier and low barrier beam lead diodes mounted in easily handled carrier packages. low barrier diodes provide optimum noise figure at low local oscillator drive levels. medium barrier diodes provide a wider dynamic range for lower distortion mixer designs. application note 976 presents design techniques for an x-band mixer. note: for new designs, the hsms-286x and hsms-820x series of surface mount microwave diodes are recommended. package characteristics these diodes are designed for microstrip and stripline use. the kovar leads provide good continuity of transmission line impedance to the diode. outline c2 is a plastic on ceramic package. the ceramic is alumina.
2 maximum ratings operating and storage temperature range c2 packaged diodes ........................................................-65 c to +150 c pulse power incident at t case = 25 c ..................................................... 1 w (1 m s pulse, du = 0.001) cw power dissipation at t case = 25 c (measured in an infinite heat sink) ............................................... 125 mw derate linearly to zero at maximum operating temperature. diode mounting temperature in packages c2 ............................................................................. 235 c for 10 sec max. peak inverse voltage .................................................................................. 4 v these diodes are esd sensitive. handle with care to avoid static discharge through the diode. rf electrical specifications at t a = 25 c maximum if typical part test noise impedance junction number freq. figure z if ( w ) maximum capacitance 5082- (ghz) barrier nf (db) min. max. swr package c j (pf) 2207 9.375 medium 6.0 200 400 1.5:1 broadband c2 0.18 2209 medium 6.5 2.0:1 2794 low 6.5 150 350 2.0:1 test dc load resistance = 0 w v = 0 conditions l.o. power = 1 mw if = 30 mhz, 1.5 db nf *minimum batch size 20 units. low barrier (zero bias) parameter symbol typical value units test conditions tangential sensitivity t ss -44 dbm zero bias, r l = 10 m w p in = - 30 dbm voltage sensitivity g 10 mv/ m w video bandwidth = 2 mhz f = 10 ghz video resistance r v 1.8 mw typical detector characteristics at t a = 25 c medium barrier and low barrier (dc bias) parameter symbol typical value units test conditions tangential sensitivity t ss -54 dbm 20 m a bias, r l = 100 k w p in = - 40 dbm voltage sensitivity g 6.6 mv/ m w video bandwidth = 2 mhz f = 10 ghz video resistance r v 1400 w
3 spice parameters 5082-2207 parameter units 5082-2209 5082-2794 b v v5 5 c j0 pf 0.20 0.20 e g ev 0.69 0.69 i bv a10e-5 10e-5 i s a 3 x 10e - 10 4 x 10e - 8 n 1.08 1.08 r s w 56 p b v 0.65 0.5 p t 22 m 0.5 0.5 typical parameters 100 10 1 0.1 0.01 forward voltage (v) figure 2. typical forward characteristics for low barrier diodes. forward current (ma) 0 0.2 0.4 0.6 0.8 +125 c +25 c -55 c 100 10 1 0.1 0.01 forward voltage (v) figure 1. typical forward characteristics for medium barrier diodes. forward current (ma) 0 0.2 0.4 0.6 1.0 0.8 +125 c +25 c -55 c
4 figure 3. typical admittance characteristics, 5082-2207 with self bias. figure 4. typical admittance characteristics, 5082-2207 with external bias. figure 5. typical admittance characteristics, 5082-2209 and 5082-2794 with self bias. figure 6. typical admittance characteristics, 5082-2209 and 5082-2794 with external bias. typical parameters, continued 0.2 0.5 1.0 1.0 2.0 3.0 5.0 2.0 3.0 5.0 0.2 0.5 0.2 0.5 1.0 2.0 3.0 10.0 10.0 10 11 10.0 3 2 4 5 7 8 9 6 12 ghz 1.5 1 3 ma 5.0 0.2 0.5 1.0 1.0 2.0 3.0 5.0 2.0 3.0 5.0 0.2 0.5 0.2 0.5 1.0 2.0 3.0 10.0 10.0 10 10.0 2 20 50 4 8 6 12 ghz 150 a 5.0 0.2 0.5 1.0 1.0 2.0 3.0 5.0 2.0 3.0 0.2 0.5 0.2 0.5 1.0 2.0 3.0 10.0 10.0 10 11 10.0 2 1 1.5 4 3 8 9 67 5 12 ghz 3 ma 5.0 5.0 0.2 0.5 1.0 1.0 2.0 3.0 5.0 2.0 3.0 0.2 0.5 0.2 0.5 1.0 2.0 3.0 10.0 10.0 10 11 10.0 12 20 50 4 3 8 9 6 7 5 2 ghz 150 a 5.0 5.0
5 typical parameters, continued figure 8. admittance test circuit. noise figure (db) 1 5.5 frequency (ghz) 911 7.5 6.5 6.0 3 7.0 15 57 13 4.1 (0.16) 10.0 (0.40) ground device under test cathode grounded 50 ppo stripline 1/8 inch groundplane spacing ppo air "a" package c2 h2 dimension "a" 1.91 0.05 (0.075 0.002) 2.67 0.05 (0.105 0.002) 1 ma rect. current 20 m a ext. bias parameter symbol 5082-2207 5082-2207 units junction resistance r j 338 421 w junction capacitance c j 0.189 0.195 pf model for c2 diodes dimensions in millimeters (inches) r j c j 0.065 pf 0.53 nh 67.0 0.318 (0.0125) e eff. = 6.37 67.0 0.318 (0.0125) e eff. = 6.37 14.5 nh figure 7. typical noise figure vs. frequency for 5082-2209, -2794.
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies, inc. obsoletes 5965-8846e 5967-5814e (11/99)
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