i c , nom 150 a i c 200 a min. typ. max. - 1,7 2,15 v - 2,0 t.b.d. v nf eingangskapazit?t input capacitance f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v c ies 10,6 - - v ge(th) v ges revision: 2.0 prepared by: mod-d2; mark mnzer gate threshold voltage kv 2,5 a isolations prfspannung insulation test voltage rms, f= 50hz, t= 1min. v isol i crm p tot 700 technische information / technical information fs150r12ke3 g igbt-module igbt-modules periodischer spitzenstrom gesamt verlustleistung total power dissipation gate emitter spitzenspannung v cesat charakteristische werte / characteristic values approved: sm tm; wilhelm rusche vorl?ufige daten preliminary data transistor wechselrichter / transistor inverter date of publication: 2002-10-28 kollektor emitter s?ttigungsspannung i c = 150a, v ge = 15v, t vj = 25c collector emitter saturation voltage i c = 150a,v ge = 15v, t vj = 125c gate schwellenspannung i c = 6ma, v ce = v ge , t vj = 25c v ces collector emitter voltage 1200 v t vj =25 c repetitive peak forward current v r = 0v, t p = 10ms, t vj = 125c elektrische eigenschaften / electrical properties h?chstzul?ssige werte / maximum rated values kollektor emitter sperrspannung t c = 80c kollektor dauergleichstrom t c = 25c dc collector current w v gate emitter peak voltage 300 dauergleichstrom i f 150 t c = 25c; transistor repetitive peak collector current t p = 1ms, t c = 80c periodischer kollektor spitzenstrom a dc forward current +/- 20 4,6 k a2s t p = 1ms i frm 300 a grenzlastintegral 5,0 5,8 6,5 v 0,5 - nf reverse transfer capacitance rckwirkungskapazit?t f= 1mhz, t vj = 25c, v ce = 25v, v ge = 0v c res - - 400 na gate emitter leakage current gate emitter reststrom v ce = 0v, v ge = 20v, t vj = 25c i ges - i2t value i2t 1,4 - c gate charge gateladung v ge = -15v...+15v q g - 5ma collector emitter cutt off current kollektor emitter reststrom v ge = 0v, t vj = 25c, v ce = 600v i ces - - 1 (8) db_fs150r12ke3_g_2.0 2002-10-28
technische information / technical information fs150r12ke3 g igbt-module igbt-modules vorl?ufige daten preliminary data min. typ. max. - 0,25 - s - 0,30 - s - 0,09 - s - 0,10 - s - 0,55 - s - 0,65 - s - 0,13 - s - 0,18 - s - 1,65 2,15 v - 1,65 t.b.d. v - 110 - a - 140 - a - 15 - c - 28 - c - 7 - mj - 14 - mj v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c transistor wechselrichter / transistor inverter t d,on anstiegszeit (induktive last) rise time (inductive load) i c = 150a, v cc = 600v t r v ge = 15v, r g = 8,2 ? , t vj = 25c v ge = 15v, r g = 8,2 ? , t vj = 125c v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c v f forward voltage rckstromspitze peak reverse recovery current i rm charakteristische werte / characteristic values i f = 150a, v ge = 0v, t vj = 25c i f = 150a, v ge = 0v, t vj = 125c i f = 150a, -di f /dt= 1500a/s durchlassspannung - - einschaltverz?gerungszeit (induktive last) turn on delay time (inductive load) i c = 150a, v cc = 600v m ? charakteristische werte / characteristic values v ge = 15v, r g = 8,2 ? , t vj = 25c v ge = 15v, r g = 8,2 ? , t vj = 125c t f v ge = 15v, r g = 8,2 ? , t vj = 25c v ge = 15v, r g = 8,2 ? , t vj = 125c abschaltverz?gerungszeit (induktive last) turn off delay time (inductive load) i c = 150a, v cc = 600v t d,off v ge = 15v, r g = 8,2 ? , t vj = 25c v ge = 15v, r g = 8,2 ? , t vj = 125c - 11 - mj - mj ausschaltverlustenergie pro puls turn off energy loss per pulse e off i c = 150a, v cc = 600v, l = 80nh v ge = 15v, r g = 8,2 ? , t vj = 25c - 24 leitungswiderstand, anschluss-chip lead resistance, terminal-chip r cc/ee t c = 25c diode wechselrichter / diode inverter 1,1 20 - nh stray inductance module modulinduktivit?t l ce - sc data v cc = 900v, v cemax = v ces - l ce di/dt einschaltverlustenergie pro puls turn on energy loss per pulse kurzschlussverhalten t p 10s, v ge 15v, t vj 125c i sc - 600 - a q r ausschaltenergie pro puls reverse recovery energy e rec i c = 150a, v cc = 600v e on i c = 150a, v cc = 600v, l = 80nh v ge = 15v, r g = 8,2 ? , t vj = 25c fallzeit (induktive last) fall time (inductive load) v r = 600v, v ge = -15v, t vj = 25c v r = 600v, v ge = -15v, t vj = 125c i f = 150a, -di f /dt= 1500a/s sperrverz?gerungsladung recovered charge i f = 150a, -di f /dt= 1500a/s 2 (8) db_fs150r12ke3_g_2.0 2002-10-28
technische information / technical information fs150r12ke3 g igbt-module igbt-modules vorl?ufige daten preliminary data min. typ. max. - - 0,180 k/w - - 0,340 k/w mechanische eigenschaften / mechanical properties abweichung von r 100 r 25 -5- k ? thermische eigenschaften / thermal properties -5 - 5 - - deviation of r 100 verlustleistung t c = 100c, r 100 = 493 ? ? r/r r thck thermal resistance, case to heatsink h?chstzul?ssige sperrschichttemp. bergangs w?rmewiderstand t vj max lagertemperatur storage temperature pro modul / per module paste = 1w/m*k / grease = 1w/m*k operation temperature 6nm c t stg -40 - 125 - al 2 o 3 k charakteristische werte / characteristic values ntc-widerstand / ntc-thermistor nennwiderstand t c = 25c rated resistance b-value % t c = 25c p 25 k/w 20 mw power dissipation b-wert r 2 = r 1 exp[b(1/t 2 - 1/t 1 )] b 25/50 - 3375 - - 0,005 - -- c maximum junction temperature betriebstemperatur t vj op -40 - 125 c 150 geh?use, siehe anlage internal insulation 225 comperative tracking index anzugsdrehmoment, mech. befestigung m mounting torque cti schraube / screw m5 innerer w?rmewiderstand; dc thermal resistance, junction to case; dc transistor wechelr. / transistor inverter diode wechselrichter / diode inverter r thjc 910 g weight g gewicht mit dieser technischen information werden halbleiterbauelemente spezifiziert, jedoch keine eigenschaften zugesichert. sie gilt in verbindung mit den zugeh?rigen technischen erl?uterungen. this technical information specifies semiconductor devices but promises no characteristics. it is valid with the belonging technical notes. innere isolation case, see appendix 3 - 6 nm terminal connection torque anzugsdrehmoment, elektr. anschlsse m3 anschlsse / terminals m6 12,7 mm creepage distance kriechstrecke 10,0 mm clearance distance luftstrecke 3 (8) db_fs150r12ke3_g_2.0 2002-10-28
technische information / technical information fs150r12ke3 g igbt-module igbt-modules vorl?ufige daten preliminary data ausgangskennlinie (typisch) i c = f(v ce ) output characteristic (typical) t v j = 125c output characteristic (typical) v ge = 15v a usgangs k enn li n i en f e ld (t yp i sc h) i c = f(v ce ) 0 30 60 90 120 150 180 210 240 270 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 v ce [v] i c [a] tvj = 25c tvj = 125c 0 30 60 90 120 150 180 210 240 270 300 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 v ce [v] i c [a] vge=19v vge=17v vge=15v vge=13v vge=11v vge=9v 4 (8) db_fs150r12ke3_g_2.0 2002-10-28
technische information / technical information fs150r12ke3 g igbt-module igbt-modules vorl?ufige daten preliminary data durchlasskennlinie der inversdiode (typisch) i f = f(v f ) forward caracteristic of inverse diode (typical) bertragungscharakteristik (typisch) transfer characteristic (typical) i c = f(v ge ) v ce = 20v 0 30 60 90 120 150 180 210 240 270 300 5678910111213 v ge [v] i c [a] tvj=25c tvj=125c 0 30 60 90 120 150 180 210 240 270 300 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 v f [v] i f [a] tvj = 25c tvj = 125c 5 (8) db_fs150r12ke3_g_2.0 2002-10-28
technische information / technical information fs150r12ke3 g igbt-module igbt-modules vorl?ufige daten preliminary data e on = f (r g ) , e off = f (r g ) , e rec = f (r g ) v ge =15v, i c =150a, v ce =600v, t vj =125c schaltverluste (typisch) switching losses (typical) e on = f (i c ) , e off = f (i c ) , e rec = f (i c ) v ge =15v, r g =8,2 ? , v ce =600v, t vj =125c s c h a lt ver l us t e (t yp i sc h) switching losses (typical) 0 10 20 30 40 50 0 30 60 90 120 150 180 210 240 270 300 i c [a] e [mj] eon eoff erec 0 10 20 30 40 50 60 0 1020304050 r g [ ? ] e [mj] eon eoff erec 6 (8) db_fs150r12ke3_g_2.0 2002-10-28
technische information / technical information fs150r12ke3 g igbt-module igbt-modules vorl?ufige daten preliminary data 2,601e-02 142,85 6,499e-02 90,68 2,601e-02 171,43 75,66 6,499e-02 6,41 1,187e-05 2,364e-03 10,25 2,364e-03 3,41 1,187e-05 sicherer arbeitsbereich (rbsoa) reverse bias safe operation area (rbsoa) v ge =15v, r g = 8,2 ? , tv j =125c i r i [k/kw] : igbt i [s] : igbt r i [k/kw] : diode i [s] : diode 1 19,31 4 transienter w?rmewiderstand transient thermal impedance z thjc = f (t) 3 2 0,01 0,1 1 0,001 0,01 0,1 1 10 t [s] z thjc [k/w] zth : igbt zth : diode ic,chip 0 50 100 150 200 250 300 350 0 200 400 600 800 1000 1200 1400 v ce [v] i c [a] ic,chip 7 (8) db_fs150r12ke3_g_2.0 2002-10-28
technische information / technical information fs150r12ke3 g igbt-module igbt-modules vorl?ufige daten preliminary data geh?usema?e / schaltbild package outline / circuit diagram 8 (8) db_fs150r12ke3_g_2.0 2002-10-28
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