switche s - c hi p 7 7 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC975 pin mmic high isolation spdt switch, 2 - 50 ghz features functional diagram general description t he h m c 97 5 is a broadband high isolation series shunt refective pi n s p d t mm ic chip. c ov ering 2 to 50 g h z, the switch features 45 db isolation and 0.9 db insertion loss at 26 g h z. t he h m c 97 5 is capable of switching 1/2 w of power from 12 to 50 g h z. t he h m c 97 5 operates from a positive (30ma) supply current and a negative (-10v) supply voltage. bias control signals for the switch consists of a reverse bias voltage of -10v typical for on state and a forward bias current of 30 ma for the off state. h ig h i so lation: 45 db @ 26 g h z lo w i ns ertion loss: 0.9 db @ 26 g h z se ries-shunt refective topology di e size: 1.75 x 1.1 x 0.1 mm electrical specifcations, t a = +25 c, with 30ma / -10v control, 50 ohm system typical applications t he h m c 975 is ideal for: ? t el ecom i nfr astructure ? microwave radio & vsa t ? mi litary radios, radar & e c m ? sp ace systems ? t es t i ns trumentation v00.0111 p arameter f requency min. t yp . max. units i ns ertion loss rf c t o rf1 2 - 15 g h z 15 - 3 0 g h z 30 - 4 0 g h z 40 - 5 0 g h z 0. 6 0.9 1.6 1.7 1.0 1.3 2.0 2.1 db db db db i ns ertion loss rf c t o rf2 2 - 15 g h z 15 - 3 0 g h z 30 - 4 0 g h z 40 - 5 0 g h z 0. 5 0.8 1.5 1.7 0.9 1.2 1.9 2.1 db db db db i so lation 2 - 15 g h z 15 - 5 0 g h z 35 3 5 50 45 db db return loss on state 2 - 15 g h z 15 - 5 0 g h z 20 1 2 db db i np ut p ow er for 1 db c om pression 2 - 6 g h z 6 - 12 g h z 12 - 5 0 g h z 20 2 6 28 dbm dbm dbm
switche s - c h ip 7 7 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com * i s olation data taken with probe on the die HMC975 v00.0111 pin mmic high isolation spdt switch, 2 - 50 ghz -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30 35 40 45 50 +25c +85c -55c frequency (ghz) insertion loss (db) -80 -70 -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 35 40 45 50 rfc/rf1 rfc/rf2 rf1/rf2 rf1 on rf1/rf2 rf2 on frequency (ghz) isolation (db) -5 -4 -3 -2 -1 0 0 5 10 15 20 25 30 35 40 45 50 +25c +85c -55c frequency (ghz) insertion loss (db) -40 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 45 50 rfc rf1 rf2 frequency (ghz) return loss (db) -3 -2.5 -2 -1.5 -1 -0.5 0 15 17 19 21 23 25 27 2 ghz 4 ghz 6 ghz 12 ghz 16 ghz input power (dbm) insertion loss (db) insertion loss vs. pin isolation return loss insertion loss, rfc to rf1 insertion loss, rfc to rf2
switche s - c h ip 7 7 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC975 v00.0111 pin mmic high isolation spdt switch, 2 - 50 ghz absolute maximum ratings rf i n put p o wer 23 dbm (2 - 6 g h z ) 30 dbm (6 - 50 g h z ) negative c o ntrol voltage -15v forward bias c u rrent 80 ma storage t e mperature -65 to +150 c o perating t e mperature -55 to +85 c e l e ct ro s t a t ic s e n s i ti v e d e v ic e o bs e r v e h a ndl i n g p r e c a u t i o ns equivalent schematic control voltages state rf c - rf1 rf c - rf2 c n t l 1 c n t l 2 1 i l i s ol -10v +30ma / 1.29v 2 i s ol i l + 30ma / 1.29v -10v
switche s - c h ip 7 7 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com p a d number function description i n terface schematic 1 rf1 rf output signal (path1). e x ternal d c bias through rf choke is required. 2 rf c r f input signal. e x ternal dropping resistor to ground through the rf choke is required. 3 rf2 rf output signal (path2). e x ternal d c bias through rf choke is required. die bottom gnd die bottom must be connected to rf/d c ground. outline drawing no te s : 1. all d i m e n s i o ns ar e i n i n c he s [ mm] 2. d i e thic k n e s s i s . 004 3. t y p ic a l bond p a d i s . 004 squar e 4 . ba c k s i d e m e t a l i z a t i o n: gold 5. ba c k s i d e m e t a l i s g round 6. bond p a d m e t a l i z a t i o n: gold 7. no c o nn ec ti o n r e q u i r e d f or unlabl e d b ond p a ds. 8. ov e r all d i e s i z e .002 pad descriptions die packaging information [1] standard alternate g p - 2 (gel p a ck) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC975 v00.0111 pin mmic high isolation spdt switch, 2 - 50 ghz
switche s - c h ip 7 7 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagram HMC975 v00.0111 pin mmic high isolation spdt switch, 2 - 50 ghz
switche s - c h ip 7 7 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics t h e die should be attached directly to the ground plane eutectically or with conductive epoxy (see h m c general h a ndling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). i f 0 .254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. t y pical die-to-substrate spacing is 0.076mm (3 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w a ffle or gel based e s d protective containers, and then sealed in an e s d protective bag for shipment. once the sealed e s d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h a ndle the chips in a clean environment. do no t attempt to clean the chip using liquid cleaning systems. static sensitivity: follow e s d precautions to protect against e s d strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: h a ndle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. t h e surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting t h e chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. t h e mounting surface should be clean and fat. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. c u re epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (d c bias, i f 1 and i f 2) or ribbon bond (rf and lo ports) 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. t h ermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultra- sonic energy to achieve reliable wirebonds. w i rebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab HMC975 v00.0111 pin mmic high isolation spdt switch, 2 - 50 ghz
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